公开(公告)号：US20070169814A1

公开(公告)日：2007-07-26

申请号：US10552653

申请日：2004-04-21

申请人： Wilhelm Huck ,  Gregory Whiting ,  Richard Friend ,  Henry Snaith

发明人： Wilhelm Huck ,  Gregory Whiting ,  Richard Friend ,  Henry Snaith

IPC分类号： H01L31/00

CPC分类号： H01L51/5012 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0044 ,  H01L51/0055 ,  H01L51/0059 ,  H01L51/0075 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521

摘要： An organic electronic device comprises at least two electrodes and a semiconducting layer comprising a mixture of at least one hole-transporting semiconducting material and at least one electron-transporting semiconducting material, wherein at least one of said semiconducting materials is in the form of semiconducting polymer brushes which are attached to the surface of at least one of said electrodes and are in contact with at least one of said other semiconducting materials. Also provided is an organic electronic device comprising at least two electrodes and a semiconducting layer comprising at least one hole-transporting or electron-transporting semiconducting material, wherein said at least one semiconducting material is in the form of semiconducting polymer brushes which are attached to the surface of at least one of said electrodes. Processes for the manufacture of said devices are also provided.

摘要翻译： 有机电子器件包括至少两个电极和包含至少一个空穴传输半导体材料和至少一个电子传输半导体材料的混合物的半导体层，其中至少一个所述半导体材料是半导体聚合物的形式 电刷附接到至少一个所述电极的表面并且与所述其它半导体材料中的至少一个接触。 还提供了包括至少两个电极和包含至少一种空穴传输或电子传输半导体材料的半导体层的有机电子器件，其中所述至少一种半导体材料是半导体聚合物刷的形式，其连接到 至少一个所述电极的表面。 还提供了用于制造所述装置的工艺。

公开(公告)号：US20100203663A1

公开(公告)日：2010-08-12

申请号：US12664015

申请日：2008-06-13

申请人： Sadayoshi Hotta ,  Jonathan Halls ,  Gregory Whiting

发明人： Sadayoshi Hotta ,  Jonathan Halls ,  Gregory Whiting

IPC分类号： H01L51/56 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0005 ,  H01L51/105

摘要： A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode; forming a thin self-assembled layer of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes; and depositing a solution comprising a solvent and an organic semi-conductive material in a channel region between the source and drain electrode.

摘要翻译： 一种制造有机薄膜晶体管的方法，所述方法包括：沉积源极和漏极; 在源电极和漏电极上形成薄的自组装材料层，薄的自组装材料层包括掺杂剂部分，用于通过接受或提供电荷来化学掺杂有机半导体材料，以及分离的附着部分键合到 掺杂剂部分并且选择性地键合到源极和漏极; 以及在源极和漏极之间的沟道区中沉积包含溶剂和有机半导体材料的溶液。

公开(公告)号：US20100032662A1

公开(公告)日：2010-02-11

申请号：US12529286

申请日：2008-04-03

申请人： Gregory Whiting ,  Jonathan J. Halls

发明人： Gregory Whiting ,  Jonathan J. Halls

IPC分类号： H01L51/10 ,  H01L21/336

CPC分类号： H01L51/052 ,  H01L51/0018 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

摘要翻译： 一种形成有机薄膜晶体管的方法，包括：提供包括源极和漏极之间的沟道区的结构，栅电极和设置在源电极和漏电极与栅电极之间的电介质层; 以及使用源电极和漏电极作为掩模对电介质层进行构图，以在沟道区域中形成电介质材料的区域，其比邻近沟道区的电介质材料区域薄。

公开(公告)号：US20110053314A1

公开(公告)日：2011-03-03

申请号：US12866691

申请日：2009-02-06

申请人： Jeremy Henley Burroughes ,  Gregory Whiting ,  Jonathan J. Halls

发明人： Jeremy Henley Burroughes ,  Gregory Whiting ,  Jonathan J. Halls

IPC分类号： H01L51/40

CPC分类号： H01L51/0541 ,  H01L27/283 ,  H01L51/0017

摘要： The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.

摘要翻译： 本发明提供一种制造顶栅有机半导体晶体管的方法，包括：提供衬底; 在所述衬底上沉积源极和漏极; 将有机半导体材料沉积在源电极和漏电极之间的沟道中以及在源电极和漏电极的至少一部分上方; 在所述有机半导体材料上沉积电介质材料; 在沟道中的电介质材料和有机半导体材料上沉积栅电极; 去除介电材料和有机半导体材料的一部分，其中栅极用作掩模以在去除步骤期间屏蔽下面的有机半导体材料和电介质材料。

公开(公告)号：US07867813B2

公开(公告)日：2011-01-11

申请号：US12143676

申请日：2008-06-20

申请人： Jonathan J. Halls ,  Craig E. Murphy ,  Gregory Whiting ,  Sadayoshi Hotta

发明人： Jonathan J. Halls ,  Craig E. Murphy ,  Gregory Whiting ,  Sadayoshi Hotta

IPC分类号： H01L51/40

CPC分类号： H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。

公开(公告)号：US20170051501A1

公开(公告)日：2017-02-23

申请号：US14927050

申请日：2015-10-29

申请人： Gregory Whiting ,  Nathan Nelson

发明人： Gregory Whiting ,  Nathan Nelson

IPC分类号： E04B1/76 ,  E04C2/02 ,  E04C2/34 ,  E04H1/12

CPC分类号： E04C2/34 ,  E02D27/02 ,  E04B1/3483 ,  E04B1/665 ,  E04B1/80 ,  E04B2001/6195 ,  E04B2001/7691 ,  E04H2001/1283 ,  Y02A30/261 ,  Y02B30/94

摘要： A building envelope system includes several elements that aid in reducing heat transfer. Panels combining insulation and radiant barrier materials, a weather-resistant textile (e.g., canvas) cover, tube insulation, a vestibule and strip curtains can all contribute to reducing heat transfer and, correspondingly, reducing energy requirements for heating and/or cooling. The panel can include a tongue and groove or similar (e.g., dovetail) coupling allowing two panels to mate. The panel can include a top insulation layer, top air gap layer(s), radiant barrier layer(s), bottom air gap layer(s), phase change insulation layer(s) and a bottom insulation layer. By including an air gap on both sides of the radiant barrier, the radiant barrier is effective at reducing heat transfer in and out of the shelter.

摘要翻译： 建筑物信封系统包括有助于减少热传递的几个元件。 结合绝缘和辐射阻挡材料的面板，耐候纺织品（例如帆布）盖，管绝缘件，前庭和带帘幕都可以有助于减少热传递，并且相应地减少加热和/或冷却的能量需求。 面板可以包括允许两个面板相配合的舌部和凹槽或类似（例如，燕尾形）联接。 面板可以包括顶部绝缘层，顶部气隙层，辐射阻挡层，底部气隙层，相变绝缘层和底部绝缘层。 通过在辐射屏障的两侧包括气隙，辐射屏障有效地减少进入和离开避难所的热量。

公开(公告)号：US20090101893A1

公开(公告)日：2009-04-23

申请号：US12143676

申请日：2008-06-20

申请人： Jonathan J. Halls ,  Craig Murphy ,  Gregory Whiting ,  Sadayoshi Hotta

发明人： Jonathan J. Halls ,  Craig Murphy ,  Gregory Whiting ,  Sadayoshi Hotta

IPC分类号： H01L51/40 ,  H01L51/10

CPC分类号： H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。

公开(公告)号：US08502356B2

公开(公告)日：2013-08-06

申请号：US12987724

申请日：2011-01-10

申请人： Jonathan J. Halls ,  Craig Edward Murphy ,  Gregory Whiting ,  Sadayoshi Hotta

发明人： Jonathan J. Halls ,  Craig Edward Murphy ,  Gregory Whiting ,  Sadayoshi Hotta

IPC分类号： H01L23/58 ,  H01L29/08 ,  H01L51/00

CPC分类号： H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

摘要翻译： 一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体 在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。

公开(公告)号：US20120037907A1

公开(公告)日：2012-02-16

申请号：US13144110

申请日：2010-01-27

申请人： Gregory Whiting ,  Jeremy Burroughes ,  Julian Carter ,  Jonathan Halls ,  Karl Weber

发明人： Gregory Whiting ,  Jeremy Burroughes ,  Julian Carter ,  Jonathan Halls ,  Karl Weber

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L51/0021 ,  H01L51/0003 ,  H01L51/002 ,  H01L51/0022 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode over a substrate using a solution processing technique; forming a workfunction modifying layer over the source and drain electrodes using a solution processing technique; and depositing an organic semi-conductive material in a channel region between the source and drain electrode using a solution processing technique.

摘要翻译： 一种制造有机薄膜晶体管的方法，所述方法包括：使用溶液处理技术将源极和漏极沉积在衬底上; 使用溶液处理技术在所述源极和漏极上形成功函数修饰层; 以及使用溶液处理技术将有机半导体材料沉积在所述源极和漏极之间的沟道区域中。

公开(公告)号：US08089065B2

公开(公告)日：2012-01-03

申请号：US12529286

申请日：2008-04-03

申请人： Gregory Whiting ,  Jonathan Halls

发明人： Gregory Whiting ,  Jonathan Halls

IPC分类号： H01L35/24

CPC分类号： H01L51/052 ,  H01L51/0018 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

摘要翻译： 一种形成有机薄膜晶体管的方法，包括：提供包括源极和漏极之间的沟道区的结构，栅电极和设置在源电极和漏电极与栅电极之间的电介质层; 以及使用源电极和漏电极作为掩模对电介质层进行构图，以在沟道区域中形成电介质材料的区域，其比邻近沟道区的电介质材料区域薄。