Display device, method of driving a display device, electronic apparatus
    3.
    发明授权
    Display device, method of driving a display device, electronic apparatus 有权
    显示装置,驱动显示装置的方法,电子装置

    公开(公告)号:US07187355B2

    公开(公告)日:2007-03-06

    申请号:US10148136

    申请日:2001-09-28

    IPC分类号: G09G3/22 G09G3/30

    摘要: A display device comprising a driver circuit which modulates the duty cycle of the on-state of a pixel during a frame period. Preferably the driver circuit comprises a comparator and more preferably the comparator is formed of thin film transistors constituting a differential pair and an inverter. Also provided is a method of driving a display device comprising the step of modulating the duty cycle of the on-state of a pixel during a frame period. Beneficially the display device is an organic electroluminescent active matrix display device.

    摘要翻译: 一种显示装置,包括在帧周期期间调制像素的导通状态的占空比的驱动器电路。 优选地,驱动器电路包括比较器,更优选地,比较器由构成差分对的薄膜晶体管和反相器构成。 还提供了一种驱动显示装置的方法,包括在帧周期期间调制像素的导通状态的占空比的步骤。 有利地,显示装置是有机电致发光有源矩阵显示装置。

    Organic field effect transistors
    5.
    发明申请
    Organic field effect transistors 失效
    有机场效应晶体管

    公开(公告)号:US20050023522A1

    公开(公告)日:2005-02-03

    申请号:US10841807

    申请日:2004-05-07

    摘要: A field effect transistor is provided which comprises a gate electrode, a source electrode, a drain electrode, at least one organic semiconducting layer, and a hole transport layer for transferring holes from said source and drain electrodes to said organic semiconducting layer, wherein said hole transport layer comprises a layered metal chalcogenide. Processes for depositing a thin layer of a layered metal dichalcogenide on a substrate and for producing top gate structures on a layered metal chalcogenide layer in the manufacture of field effect transistors according to the invention are also provided.

    摘要翻译: 提供一种场效应晶体管,其包括栅电极,源电极,漏电极,至少一个有机半导体层和用于将空穴从所述源电极和漏电极传送到所述有机半导体层的空穴传输层,其中所述孔 传输层包括层状金属硫族化物。 还提供了在根据本发明的场效应晶体管的制造中,在层叠的金属硫族化物层上沉积层状金属二硫属元素的薄层并在基板上形成顶栅结构的工艺。

    Photoresponsive materials
    7.
    发明授权
    Photoresponsive materials 失效
    光反应材料

    公开(公告)号:US5698048A

    公开(公告)日:1997-12-16

    申请号:US569710

    申请日:1995-12-08

    IPC分类号: H01L51/00 H01L51/30 H01L31/00

    摘要: A photoresponsive material comprises molecular or polymeric semiconductors in which photogeneration of separated charge carriers proceeds substantially via an intermediate stage of a triplet exciton, where the generation of the triplet exciton may be facilitated by the presence of elements of high atomic number, and in which the generation of separated charges from the intermediate triplet excited states is facilitated by the presence of at least two semiconductive components, one of which is of high electron affinity and able to accept electrons, and the other of which is of low ionisation potential and therefore able to accept positive charge carriers, the difference between the electron affinity of the former and the ionisation potential of the latter being sufficiently low so as to allow the ionisation of a triplet exciton which is present on either of the two aforementioned semiconductive components or on a third component. The provision of contact electrodes allows charge to be collected by an external electrical circuit and allows light to be incident on the active photoresponsive material.

    摘要翻译: 光响应材料包括分子或聚合物半导体,其中分离的电荷载体的光生能基本上通过三线态激子的中间阶段进行,其中通过存在高原子数的元素可以促进三线态激子的产生,其中 通过存在至少两个半导体组分,其中一个具有高电子亲和力并且能够接受电子,另一个具有低电离势,因此可以促进来自中间三重态激发态的分离电荷的产生 接受正电荷载体,前者的电子亲和力和后者的电离电位之间的差异足够低,以便允许存在于两个上述半导体组分或第三组分上的三线态激子的电离 。 提供接触电极允许电荷由外部电路收集,并允许光入射到活性光响应材料上。