-
公开(公告)号:US08003959B2
公开(公告)日:2011-08-23
申请号:US12492894
申请日:2009-06-26
IPC分类号: H01J37/317 , H01J37/08 , H01J49/10 , H01J27/02 , H01J9/38
CPC分类号: H01J49/10 , H01J27/02 , H01J37/08 , H01J37/3171 , H01J2209/017 , H01J2237/022 , H01J2237/05 , H01J2237/30466
摘要: In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
摘要翻译: 在离子注入机中,法拉第杯用于接收在离子源清洁期间产生的离子束。 检测到的光束具有相关联的质谱,其指示何时完成离子源清洁过程。 质谱产生由清洁剂和包含离子源的材料组成的信号。 当离子源室被清洁时,该信号将随着时间的推移而升高,并且一旦沉积物从源室被蚀刻掉,就会保持恒定,从而利用现有的植入工具确定离子源清洁期间的端点检测。
-
公开(公告)号:US20110143527A1
公开(公告)日:2011-06-16
申请号:US12964357
申请日:2010-12-09
IPC分类号: H01L21/265 , H01J37/317 , H01J37/02
CPC分类号: H01J37/08 , H01J37/3171
摘要: Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.
摘要翻译: 本发明公开了一种用于产生均匀离子束的改进技术。 在一个特定的示例性实施例中,该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。 该方法可以包括:将掺杂剂引入到离子源的离子源室中,掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室,稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子,含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底,其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。
-
公开(公告)号:US20100327159A1
公开(公告)日:2010-12-30
申请号:US12492894
申请日:2009-06-26
IPC分类号: H01J37/317 , H01J37/05 , H01J49/26
CPC分类号: H01J49/10 , H01J27/02 , H01J37/08 , H01J37/3171 , H01J2209/017 , H01J2237/022 , H01J2237/05 , H01J2237/30466
摘要: In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
摘要翻译: 在离子注入机中,法拉第杯用于接收在离子源清洁期间产生的离子束。 检测到的光束具有相关联的质谱,其指示何时完成离子源清洁过程。 质谱产生由清洁剂和包含离子源的材料组成的信号。 当离子源室被清洁时,该信号将随着时间的推移而升高,并且一旦沉积物从源室被蚀刻掉,就会保持恒定,从而利用现有的植入工具确定离子源清洁期间的端点检测。
-
公开(公告)号:US08263944B2
公开(公告)日:2012-09-11
申请号:US12340812
申请日:2008-12-22
申请人: John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人: John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号: H01J27/00
CPC分类号: H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要: In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译: 在离子注入机中,惰性气体通过供应管被引导到离子源室附近的阴极组件。 向惰性气体提供朝向阴极组件的局部定向流,以减少引入离子源室的清洁或掺杂气体的不期望浓度,从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命 资源。
-
公开(公告)号:US20100155619A1
公开(公告)日:2010-06-24
申请号:US12340812
申请日:2008-12-22
申请人: John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人: John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
CPC分类号: H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要: In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译: 在离子注入机中,惰性气体通过供应管被引导到离子源室附近的阴极组件。 向惰性气体提供朝向阴极组件的局部定向流,以减少引入离子源室的清洁或掺杂气体的不期望浓度,从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命 资源。
-
公开(公告)号:US08809800B2
公开(公告)日:2014-08-19
申请号:US12533318
申请日:2009-07-31
申请人: Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilhelm P. Platow , Alexander S. Perel
发明人: Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilhelm P. Platow , Alexander S. Perel
IPC分类号: H01J27/02 , H01J27/14 , H01J37/08 , H01J37/317
CPC分类号: H01J27/022 , H01J27/02 , H01J27/14 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/31705
摘要: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.
-
公开(公告)号:US20090242793A1
公开(公告)日:2009-10-01
申请号:US12080028
申请日:2008-03-31
IPC分类号: H01J27/02
CPC分类号: H01J27/022 , H01J37/04 , H01J37/08 , H01J37/16 , H01J2237/082
摘要: Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
摘要翻译: 公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。 将优选由钨构成的两个衬垫元件插入到离子源室中,一个放置在两个侧壁中的每一个上。 这些插入物被电偏置以便引起垂直于所施加的磁场的电场。 已经意外地发现这种布置不仅增加了离子室壳体的寿命,而且延长了间接加热的阴极(IHC)和排斥器的使用寿命。 此外,使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子,或者在较低功率水平下产生相等数量的离子。
-
公开(公告)号:US08937003B2
公开(公告)日:2015-01-20
申请号:US13613964
申请日:2012-09-13
申请人: Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人: Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
CPC分类号: C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要: A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译: 公开了用于离子注入靶的技术。 根据一个示例性实施例,该技术可以被实现为用于离子注入靶的方法,所述方法包括:在离子源的电弧室中提供预定量的处理气体,所述处理气体含有植入物种类和植入物种 载体,其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中,其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。
-
公开(公告)号:US08330127B2
公开(公告)日:2012-12-11
申请号:US12080028
申请日:2008-03-31
IPC分类号: G21K5/00
CPC分类号: H01J27/022 , H01J37/04 , H01J37/08 , H01J37/16 , H01J2237/082
摘要: Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
摘要翻译: 公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。 将优选由钨构成的两个衬垫元件插入到离子源室中,一个放置在两个侧壁中的每一个上。 这些插入物被电偏置以便引起垂直于所施加的磁场的电场。 已经意外地发现这种布置不仅增加了离子室壳体的寿命,而且延长了间接加热的阴极(IHC)和排斥器的使用寿命。 此外,使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子,或者在较低功率水平下产生相等数量的离子。
-
公开(公告)号:US08455839B2
公开(公告)日:2013-06-04
申请号:US12720960
申请日:2010-03-10
CPC分类号: H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译: 离子源包括限定具有提取孔的电弧室的电弧室壳体和擦拭器。 擦拭器位于电弧室内处于停放位置,并且构造成从停放位置驱动到操作位置以清洁提取孔。 用于离子源的清洁子组件包括擦拭器,其构造成当处于停放位置时定位在离子源的电弧室内并且从停放位置驱动到操作位置以清洁离子源的提取孔。
-
-
-
-
-
-
-
-
-