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7 条记录 (耗时 0.017 秒)

    Microaccelerometer employing resonant circuit detection of seismic mass displacement
    1.
    发明授权
    Microaccelerometer employing resonant circuit detection of seismic mass displacement 失效
    微加速度计采用谐振电路检测地震质量位移

    公开(公告)号：US5801309A

    公开(公告)日：1998-09-01

    申请号：US565325

    申请日：1995-11-30

    申请人： William N. Carr ,  Dong-Il Cho

    发明人： William N. Carr ,  Dong-Il Cho

    IPC分类号： G01P15/10 ,  G01P15/125 ,  G01P15/13

    CPC分类号： G01P15/097 ,  G01P15/125 ,  G01P15/132 ,  G01P2015/0828

    摘要： A first embodiment of an improved microaccelerometer includes a seismic mass, a support wafer, a cover wafer and a beam (or beams) for flexibly mounting a seismic mass between the support and cover wafers. A first oscillator includes a resonant circuit whose capacitance comprises conductive plates on one surface of the seismic mass and a conductive coating on an opposed surface of the support wafer. A second oscillator includes a resonant circuit whose capacitance is comprised of conductive coatings on another surface of the seismic mass and on an opposed surface of the cover wafer. A difference circuit provides an acceleration output that is dependent on a difference in oscillation frequencies between the first and second oscillators, when the accelerometer is subjected to an acceleration event. A second embodiment includes a structure similar to the aforedescribed, however, the second oscillator is replaced by an ac levitation circuit that exerts a single direction restoring force on the seismic mass during an acceleration event. A third embodiment provides ac levitational restoring forces when the seismic mass is subject to acceleration in either of two opposed directions. In the latter embodiment, ac levitating circuits are disposed on opposed surfaces of the support and cover wafers.

    摘要翻译： 改进的微加速度计的第一实施例包括地震质量块，支撑晶片，覆盖晶片和用于在支撑和覆盖晶片之间灵活地安装地震块的梁（或梁）。 第一振荡器包括谐振电路，其电容包括在地震块的一个表面上的导电板和在支撑晶片的相对表面上的导电涂层。 第二振荡器包括谐振电路，其谐振电路的电容由地震块的另一表面上的导电涂层和覆盖晶片的相对表面组成。 当加速度计受到加速事件时，差分电路提供取决于第一和第二振荡器之间的振荡频率差的加速度输出。 第二实施例包括与上述类似的结构，然而，第二振荡器由在加速事件期间对地震质量施加单方向恢复力的交流电路代替。 第三个实施例提供了当两个相反的方向中的任何一个地震质量受到加速时的交替恢复力。 在后一实施例中，交替悬浮电路设置在支撑和覆盖晶片的相对表面上。

    Silicon etching apparatus using XeF2
    3.
    发明授权
    Silicon etching apparatus using XeF2 失效
    硅蚀刻装置采用XeF2

    公开(公告)号：US06736987B1

    公开(公告)日：2004-05-18

    申请号：US09614785

    申请日：2000-07-12

    申请人： Dong-Il Cho

    发明人： Dong-Il Cho

    IPC分类号： C23F100

    CPC分类号： H01L21/67069 ,  H01L21/3065

    摘要： The silicon etching apparatus using XeF2 includes: a basic structure composed of a loading chamber tot loading XeF2, an expansion chamber for collecting sublimated XeF2 gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF2 further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF2 gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF2 in the loading chamber; and a weight scale for measuring the weight of XeF2 in the loading chamber.

    摘要翻译： 使用XeF2的硅蚀刻装置包括：由加载室XeF2的加载室，用于收集升华的XeF 2气体的膨胀室和用于进行蚀刻处理的蚀刻室构成的基本结构; 以及用于在蚀刻工艺之前注入氮气以消除装置中的空气湿气并因此防止形成HF的装置。 使用XeF2的硅蚀刻装置还包括：具有设置在蚀刻室中的预定形状的喷射器，用于将XeF 2气体向下均匀地注入到晶片的表面; 反馈控制器，用于反馈控制装载室的内部压力，以防止残余的XeF2在装载室中升华; 以及用于测量装载室中的XeF2的重量的重量标尺。

    Micromechanical system fabrication method using (111) single crystalline silicon
    4.
    发明授权
    Micromechanical system fabrication method using (111) single crystalline silicon 有权
    （111）单晶硅的微机械系统制造方法

    公开(公告)号：US6150275A

    公开(公告)日：2000-11-21

    申请号：US250519

    申请日：1999-02-16

    申请人： Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

    发明人： Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

    IPC分类号： C23F1/00 ,  B81C1/00 ,  C30B33/00 ,  H01L21/311 ,  H01L21/302

    CPC分类号： C30B29/06 ,  B81C1/00801 ,  C30B33/00 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014

    摘要： Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

    摘要翻译： 公开了一种使用（111）单晶硅作为硅衬底并采用反应离子蚀刻工艺以便将从硅衬底分离的微结构图案和利用碱性水溶液的选择性剥离蚀刻工艺的微机械系统制造方法 溶液以将微结构与硅衬底分离。 根据本发明的微机械系统制造方法，通过采用RIE技术，可以将微结构的侧面形成为垂直的。 此外，通过使用选择性剥离蚀刻技术，通过使用慢蚀刻{111}晶面作为碱性水溶液中的蚀刻停止，微结构可以容易地与硅衬底分离。 此外，可以在RIE步骤期间调整蚀刻深度，从而调整微结构的厚度和微结构与硅衬底之间的间隔。

    Micromechanical system fabrication method using (111) single crystalline silicon
    5.
    发明授权
    Micromechanical system fabrication method using (111) single crystalline silicon 有权
    （111）单晶硅的微机械系统制造方法

    公开(公告)号：US06689694B1

    公开(公告)日：2004-02-10

    申请号：US09715446

    申请日：2000-11-17

    申请人： Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

    发明人： Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

    IPC分类号： H01L21311

    CPC分类号： C30B29/06 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  C30B33/00

    摘要： Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

    摘要翻译： 公开了一种使用（111）单晶硅作为硅衬底并采用反应离子蚀刻工艺以便将从硅衬底分离的微结构图案和利用碱性水溶液的选择性剥离蚀刻工艺的微机械系统制造方法 溶液以将微结构与硅衬底分离。 根据本发明的微机械系统制造方法，通过采用RIE技术，可以将微结构的侧面形成为垂直的。 此外，通过使用选择性剥离蚀刻技术，通过使用慢蚀刻{111}晶面作为碱性水溶液中的蚀刻停止，微结构可以容易地与硅衬底分离。 此外，可以在RIE步骤期间调整蚀刻深度，从而调整微结构的厚度和微结构与硅衬底之间的间隔。

    Shape memory alloy relays and switches
    7.
    发明授权
    Shape memory alloy relays and switches 失效
    形状记忆合金继电器和开关

    公开(公告)号：US5410290A

    公开(公告)日：1995-04-25

    申请号：US101249

    申请日：1993-08-02

    申请人： Dong-Il Cho

    发明人： Dong-Il Cho

    IPC分类号： H01H37/32 ,  H01H61/01 ,  H01H61/013 ,  H01M61/06

    CPC分类号： H01H61/0107 ,  H01H61/013

    摘要： The present invention provides several embodiments of an electrical switch that uses a shape memory alloy (SMA). In one embodiment the electrical switch is an on-off switch and comprises a first support member with a first electrical contact mounted thereon, a second support member with a second electrical contact mounted thereon, and a third support member disposed between the first and second support members. A wire element made from a shape memory alloy (SMA) is attached at either end to the third support member. A switch element made of an electrically-conducting material is attached to the SMA wire element at a position intermediate the ends of the wire element. Heating means are provided for selectively heating sections of the SMA wire element in order to make the SMA wire element turn or rotate, thereby causing the switch element to pivot into contact with either the first electrical contact or the second electrical contact.

    摘要翻译： 本发明提供使用形状记忆合金（SMA）的电开关的若干实施例。 在一个实施例中，电开关是开关开关，并且包括安装在其上的第一电触头的第一支撑构件，安装有第二电触头的第二支撑构件，以及设置在第一和第二支撑件之间的第三支撑构件 会员 由形状记忆合金（SMA）制成的线元件在任一端附接到第三支撑构件。 由导电材料制成的开关元件在线元件端部之间的位置附接到SMA线元件。 提供加热装置用于选择性地加热SMA线元件的部分，以使SMA线元件转动或旋转，从而使开关元件枢转成与第一电触头或第二电触点接触。