摘要:
A dynamic random access memory cell is disclosed that comprises a capacitive storage device and a write access transistor. The write access transistor is operatively coupled to the capacitive storage device and has a gate stack that comprises a high-K dielectric, wherein the high-K dielectric has a dielectric constant greater than a dielectric constant of silicon dioxide. Also disclosed are a memory array using the cells, a computing apparatus using the memory array, a method of storing data, and a method of manufacturing.
摘要:
A switching apparatus for switching packetized voice traffic between a plurality of communication devices, the switching apparatus comprises a multi-layer switch, a plurality of communication ports, control means and ingress processing means, said packetized voice traffic comprises call control packets and medium packets which are exchanged between the communication devices via said communication ports, wherein medium packet traffic from a first communication device to a second communication device is split into a first call segment and a second call segment, the first call segment originates from said first communication devices and terminates at said switching apparatus, the second call segment originates from said switching apparatus and terminates at said second communication device, each medium packet from said first communication device is processed by said ingress processing means of said switching apparatus before onward transmission to said second communication device.
摘要:
An integrated circuit, such as a memory macro, includes multiple power rails supporting first and second voltage differentials, with the second voltage differential being smaller than the first voltage differential. Signal lines in the integrated circuit are driven with the small voltage swing, which is generated by small swing circuits. The integrated circuit further includes regeneration circuits, which are receiving small voltage swing inputs and are outputting first, or full voltage swings. The application of the small voltage swing to the signal lines saves power in the integrated circuit. A wide bandwidth, full-wordline I/O, memory integrated circuit has simultaneously operable connection paths between essentially all the memory cells that are attached to the same wordline and the corresponding I/O terminals, and it has a single ended data-line structure.
摘要:
An admission scheme for a communication network comprising the step of:—a) acquiring and storing the MAC address of a device on admitting the device to the communication network, b) checking the source MAC address of a data packet before said data packet is admitted into the communication network, and c) admitting a data packet into the communication network only if the MAC address is registered with the communication network.
摘要:
A DRAM is disclosed which includes a single ended bitline structure, a single ended global bitline structure, primary sense amplifiers with data storage and data write-back capability and with capability to decouple from the global bitlines, a full-wordline I/O structure where essentially all memory cell that belong to the same wordline are being operated on, and a pipelined architecture. The DRAM further includes a small voltage swing design. The primary sense amplifiers can include more than one amplification stages. Such a DRAM is suitable for applications in conjunction with processors as an embedded DRAM.
摘要:
A new type of static RAM cell is disclosed that is based on a gated diode and its voltage amplification characteristic. The cell combines the advantages of a static RAM, in which data refresh is not needed, and those of gated diode cells, which are scalable to low voltages, have high signal to noise ratio, high signal margin, and tolerance to process variations, to form a single high performance static memory cell. This new cell has independent read and write paths, which allow for separate optimization of the read (R) and write (W) events, and enable dual-port R/W operation. Furthermore, storage node disturbance during the read and write operations are eliminated, which greatly improves cell stability and scalability for future technologies.
摘要:
A sense amplifier circuit comprises (1) an isolation device comprising a control terminal and first and second terminals, the first terminal of the isolation device coupled to a signal line, (2) a gated diode comprising first and second terminals, the first terminal of the gated diode coupled to the second terminal of the isolation device, and the second terminal of the gated diode coupled to a set line; and (3) control circuitry coupled to the control terminal of the isolation device and adapted to control voltage on the control terminal of the isolation device in order to enable and disable the isolation device. A latch circuit further comprises a precharge device comprising a control terminal and first and second terminals, the first terminal of the precharge device coupled to a power supply voltage, and the second terminal of the precharge device coupled to the first terminal of the isolation device.
摘要:
A circuit comprises a control line and a two terminal semiconductor device having first and second terminals. The first terminal is coupled to a signal line, and the second terminal is coupled to the control line. The two terminal semiconductor device is adapted to have a capacitance when a voltage on the first terminal relative to the second terminal is above a threshold voltage and to have a smaller capacitance when a voltage on the first terminal relative to the second terminal is below the threshold voltage. The control line is coupled to a control signal and the signal line is coupled to a signal and is output of the circuit. A signal is placed on the signal line and voltage on the control line is modified (e.g., raised in the case of n-type devices, or lowered for a p-type devices). When the signal falls below the threshold voltage, the two terminal semiconductor device acts as a very small capacitor and the output of the circuit will be a small value. When the signal is above the threshold voltage, the two terminal semiconductor device acts as a large capacitor and the output of the circuit will be influenced by both the value of the signal and the value of the modified voltage on the control line and therefore the signal will be amplified.
摘要:
A random access memory (RAM) circuit is coupled to a write control line, a read control line, and one or more bitlines, and includes a write switch having a control terminal and first and second terminals. The first terminal of the write switch is coupled to the one or more bitlines, and the control terminal of the write switch is coupled to the write control line. The circuit includes a charge-storage device having first and second terminals, wherein a first terminal of the charge-storage device is coupled to the second terminal of the write switch and a second terminal of the charge-storage device is coupled to the read control line. The circuit includes a read switch having a control terminal and first and second terminals. The control terminal of the read switch is coupled to the first terminal of the charge-storage device and is coupled to the second terminal of the write switch. The first terminal of the read switch is coupled to the one or more bitlines, and the second terminal of the read switch coupled to ground. The circuit may be implemented through a number of disclosed semiconductor memory devices.
摘要:
A sense amplifier circuit comprises (1) an isolation device comprising a control terminal and first and second terminals, the first terminal of the isolation device coupled to a signal line, (2) a gated diode comprising first and second terminals, the first terminal of the gated diode coupled to the second terminal of the isolation device, and the second terminal of the gated diode coupled to a set line; and (3) control circuitry coupled to the control terminal of the isolation device and adapted to control voltage on the control terminal of the isolation device in order to enable and disable the isolation device. A latch circuit further comprises a precharge device comprising a control terminal and first and second terminals, the first terminal of the precharge device coupled to a power supply voltage, and the second terminal of the precharge device coupled to the first terminal of the isolation device.