公开(公告)号：US12074235B2

公开(公告)日：2024-08-27

申请号：US17015428

申请日：2020-09-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Donald E. Savage ,  Yajin Chen ,  Samuel Marks

IPC: B32B9/00 ,  C01G31/02 ,  C23C14/08 ,  C23C14/35 ,  C23C14/58 ,  C30B28/02 ,  H01L31/0232 ,  H01L31/08 ,  B82Y30/00 ,  B82Y40/00 ,  C30B29/30

CPC classification number: H01L31/0232 ,  C01G31/02 ,  C23C14/088 ,  C23C14/35 ,  C23C14/5806 ,  C30B28/02 ,  H01L31/085 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/34 ,  C30B29/30

Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.

公开(公告)号：US20210069999A1

公开(公告)日：2021-03-11

申请号：US17015428

申请日：2020-09-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Paul Gregory Evans ,  Thomas Francis Kuech ,  Donald E. Savage ,  Yajin Chen ,  Samuel Marks

IPC: B29D11/00 ,  C01G31/02 ,  H01L31/08 ,  H01L31/0232

Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.