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公开(公告)号：US20120031491A1
公开(公告)日：2012-02-09
申请号：US13275079
申请日：2011-10-17
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/074 , H01L31/0725 , Y02E10/50
摘要： A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.
摘要翻译： 提供单个P-N结太阳能电池，其具有用于电荷分离的两个耗尽区，同时允许电子和空穴复合，使得与太阳能电池的两个耗尽区相关的电压将加在一起。 单个pn结太阳能电池包括在PN结的一侧上形成的InGaN或InAlN的合金与在另一侧形成的Si的合金，以便通过仅一个PN结产生两结（2J）串联太阳能电池的特性 。 具有串联太阳能电池特性的单个P-N结太阳能电池将实现超过30％的功率转换效率。
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公开(公告)号：US20080314447A1
公开(公告)日：2008-12-25
申请号：US11777963
申请日：2007-07-13
CPC分类号： H01L31/074 , H01L31/0725 , Y02E10/50
摘要： A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.
摘要翻译： 提供单个P-N结太阳能电池，其具有用于电荷分离的两个耗尽区，同时允许电子和空穴复合，使得与太阳能电池的两个耗尽区相关的电压将加在一起。 单个pn结太阳能电池包括在PN结的一侧上形成的InGaN或InAlN的合金与在另一侧形成的Si的合金，以便通过仅一个PN结产生两结（2J）串联太阳能电池的特性 。 具有串联太阳能电池特性的单个P-N结太阳能电池将实现超过30％的功率转换效率。
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公开(公告)号：US08129614B2
公开(公告)日：2012-03-06
申请号：US13275079
申请日：2011-10-17
IPC分类号： H01L31/042
CPC分类号： H01L31/074 , H01L31/0725 , Y02E10/50
摘要： A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.
摘要翻译： 提供单个P-N结太阳能电池，其具有用于电荷分离的两个耗尽区，同时允许电子和空穴复合，使得与太阳能电池的两个耗尽区相关的电压将加在一起。 单个pn结太阳能电池包括在PN结的一侧上形成的InGaN或InAlN的合金与在另一侧形成的Si的合金，以便通过仅一个PN结产生两结（2J）串联太阳能电池的特性 。 具有串联太阳能电池特性的单个P-N结太阳能电池将实现超过30％的功率转换效率。
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公开(公告)号：US08039740B2
公开(公告)日：2011-10-18
申请号：US11777963
申请日：2007-07-13
IPC分类号： H01L31/042
CPC分类号： H01L31/074 , H01L31/0725 , Y02E10/50
摘要： A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.
摘要翻译： 提供单个P-N结太阳能电池，其具有用于电荷分离的两个耗尽区，同时允许电子和空穴复合，使得与太阳能电池的两个耗尽区相关的电压将加在一起。 单个pn结太阳能电池包括在PN结的一侧上形成的InGaN或InAlN的合金与在另一侧形成的Si的合金，以便通过仅一个PN结产生两结（2J）串联太阳能电池的特性 。 具有串联太阳能电池特性的单个P-N结太阳能电池将实现超过30％的功率转换效率。
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5.发明申请公开(公告)号：US20100095998A1
公开(公告)日：2010-04-22
申请号：US12528394
申请日：2008-04-09
IPC分类号： H01L31/042 , H01L31/0304
CPC分类号： H01L31/03046 , H01L31/0687 , Y02E10/544
摘要： A semiconductor structure comprises a first photovoltaic cell comprising a first material, and a second photovoltaic cell comprising a second material and connected in series to the first photovoltaic cell. The conduction band edge of the first material adjacent the second material is at most 0.1 eV higher than a valence band edge of the second material adjacent the material. Preferably, the first material of the first photovoltaic cell comprises ln].χAlχN or lnt_yGayN and the second material of the second photovoltaic cell comprises silicon or germanium. Alternatively, the first material of the first photovoltaic cell comprises InAs or InAsSb and the second material of the second photovoltaic cell comprises GaSb or GaAsSb.
摘要翻译： 半导体结构包括包括第一材料的第一光伏电池和包括第二材料并与第一光伏电池串联连接的第二光伏电池。 与第二材料相邻的第一材料的导带边缘比邻近材料的第二材料的价带边缘高0.1eV以上。 优选地，第一光伏电池的第一材料包括ln_xAlxN或lnt_yGayN，并且第二光伏电池的第二材料包括硅或锗。 或者，第一光伏电池的第一材料包括InAs或InAsSb，第二光伏电池的第二材料包括GaSb或GaAsSb。
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公开(公告)号：US20090173373A1
公开(公告)日：2009-07-09
申请号：US12348127
申请日：2009-01-02
IPC分类号： H01L31/042 , H01L31/00
CPC分类号： H01L31/072 , H01L31/0725 , H01L31/074 , H01L31/1848 , Y02E10/544
摘要： A compositionally graded Group III-nitride alloy is provided for use in a solar cell. In one or more embodiment, an alloy of either InGaN or InAlN formed in which the In composition is graded between two areas of the alloy. The compositionally graded Group III-nitride alloy can be utilized in a variety of types of solar cell configurations, including a single P-N junction solar cell having tandem solar cell characteristics, a multijunction tandem solar cell, a tandem solar cell having a low resistance tunnel junction and other solar cell configurations. The compositionally graded Group III-nitride alloy possesses direct band gaps having a very large tuning range, for example extending from about 0.7 to 3.4 eV for InGaN and from about 0.7 to 6.2 eV for InAlN.
摘要翻译： 提供了用于太阳能电池的组成分级III族氮化物合金。 在一个或多个实施例中，形成InGaN或InAlN的合金，其中In组成在合金的两个区域之间分级。 组成分级的III族氮化物合金可以用于各种类型的太阳能电池配置，包括具有串联太阳能电池特性的单个PN结太阳能电池，多结串联太阳能电池，具有低电阻隧道结的串联太阳能电池 和其他太阳能电池配置。 组成分级的III族氮化物合金具有非常大的调谐范围的直接带隙，例如对于InGaN为约0.7至3.4eV，对于InAlN为约0.7至6.2eV。
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7.发明授权Dilute Group III-V nitride intermediate band solar cells with contact blocking layers 有权具有接触阻挡层的III-V族氮化物中间带太阳能电池的稀释公开(公告)号：US08232470B2
公开(公告)日：2012-07-31
申请号：US12558446
申请日：2009-09-11
申请人： Wladyslaw Walukiewicz , Kin Man Yu
发明人： Wladyslaw Walukiewicz , Kin Man Yu
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , H01L31/022425 , H01L31/0304 , H01L31/03046 , H01L31/03048 , H01L31/0735 , H01L31/1844 , H01L31/1848 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (VOC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.
摘要翻译： 提供了一种中间带太阳能电池（IBSC），其包括基于稀的III-V族氮化物材料的pn结和位于pn结的相对表面上的一对接触阻挡层，用于通过阻断pn结的电中心带 在中间带中的电荷传输，而不影响pn结的电子和空穴收集效率，由此增加IBSC的开路电压（VOC），并通过利用中间带吸收光能以增加光电流，能量低于 IBSC的吸收层。 因此，IBSC的整体功率转换效率将远高于传统的单结太阳能电池。 IBSC的p-n结吸收层可以进一步具有组成梯度的氮浓度以提供电场以用于更有效的电荷收集。
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8.发明申请Dilute Group III-V Nitride Intermediate Band Solar Cells with Contact Blocking Layers 有权具有接触阻挡层的稀释III-V族氮化物中间带太阳能电池公开(公告)号：US20100175751A1
公开(公告)日：2010-07-15
申请号：US12558446
申请日：2009-09-11
申请人： Wladyslaw Walukiewicz , Kin Man Yu
发明人： Wladyslaw Walukiewicz , Kin Man Yu
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , H01L31/022425 , H01L31/0304 , H01L31/03046 , H01L31/03048 , H01L31/0735 , H01L31/1844 , H01L31/1848 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (VOC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.
摘要翻译： 提供了一种中间带太阳能电池（IBSC），其包括基于稀的III-V族氮化物材料的pn结和位于pn结的相对表面上的一对接触阻挡层，用于通过阻断pn结的电中心带 在中间带中的电荷传输，而不影响pn结的电子和空穴收集效率，由此增加IBSC的开路电压（VOC），并通过利用中间带吸收光能以增加光电流，能量低于 IBSC的吸收层。 因此，IBSC的整体功率转换效率将远高于传统的单结太阳能电池。 IBSC的p-n结吸收层可以进一步具有组成梯度的氮浓度以提供电场以用于更有效的电荷收集。
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公开(公告)号：US08129615B2
公开(公告)日：2012-03-06
申请号：US12009505
申请日：2008-01-18
申请人： Wladyslaw Walukiewicz , Kin Man Yu , Junqiao Wu
发明人： Wladyslaw Walukiewicz , Kin Man Yu , Junqiao Wu
IPC分类号： H01L31/0264
CPC分类号： H01L31/03046 , H01L31/0296 , H01L31/02966 , H01L31/1832 , H01L31/1844 , Y02E10/544 , Y10S438/93
摘要： The highly mismatched alloy Zn1-yMnyOxTe1-x, 0≦y
摘要翻译： 已经使用氧离子注入和脉冲激光熔化的组合合成了高度不匹配的合金Zn1-yMnyOxTe1-x，0＆nlE; y <1和0
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10.发明申请P-Type Amorphous GaNAs Alloy as Low Resistant Ohmic Contact to P-Type Group III-Nitride Semiconductors 审中-公开P型无定形GaNAs合金与P型III族氮化物半导体的低电阻欧姆接触公开(公告)号：US20130126892A1
公开(公告)日：2013-05-23
申请号：US13475420
申请日：2012-05-18
申请人： Kin Man Yu , Wladyslaw Walukiewicz , Alejandro X. Levander , Sergei V. Novikov , C. Thomas Foxon
发明人： Kin Man Yu , Wladyslaw Walukiewicz , Alejandro X. Levander , Sergei V. Novikov , C. Thomas Foxon
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02546 , H01L21/04 , H01L21/28575 , H01L29/452 , H01L31/03044 , H01L31/03048 , H01L31/0376 , H01L31/0693 , H01L33/325 , H01L33/40 , Y02E10/544
摘要： A new composition of matter is described, amorphous GaN1-xAsx:Mg, wherein 0
摘要翻译： 描述了一种新的物质组合物，其中0
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