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20 条记录 (耗时 0.018 秒)

    Method and device for tapping a furnace containing a tappable melt
    1.
    发明授权
    Method and device for tapping a furnace containing a tappable melt 失效
    用于攻丝含有可插拔熔体的炉子的方法和装置

    公开(公告)号：US4475206A

    公开(公告)日：1984-10-02

    申请号：US478289

    申请日：1983-03-24

    申请人： Wolfgang Dietze ,  Jurgen Schafer

    发明人： Wolfgang Dietze ,  Jurgen Schafer

    IPC分类号： C01B33/02 ,  C01B33/025 ,  F27D3/15 ,  F27D3/14

    CPC分类号： F27D3/1518

    摘要： A method for tapping a furnace contains a tappable melt of silicon dioxide to be reduced to silicon with carbon, which comprises providing a graphite tap pipe on the furnace, and electrically heating the tap pipe to cause liquid silicon to flow out of the pipe, and a device for carrying out the method.

    摘要翻译： 一种用于窑炉的方法包括一个可以用碳还原成硅的二氧化硅熔体，它包括在炉子上提供一个石墨自来水管，并对该管道进行电加热，使液体硅流出管道; 用于执行该方法的装置。

    Shaped bodies and production of semiconductor material
    3.
    发明授权
    Shaped bodies and production of semiconductor material 失效
    成型体和半导体材料的生产

    公开(公告)号：US4034705A

    公开(公告)日：1977-07-12

    申请号：US570040

    申请日：1975-04-21

    申请人： Wolfgang Dietze ,  Andreas Kasper ,  Ulrich Rucha

    发明人： Wolfgang Dietze ,  Andreas Kasper ,  Ulrich Rucha

    IPC分类号： C23C16/00 ,  C23C16/22 ,  C30B25/08 ,  C23C13/08

    CPC分类号： C23C16/00 ,  C23C16/22 ,  C30B25/08

    摘要： A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.

    摘要翻译： 一种用于制造一种或多种半导体材料成形体的技术，其使用以下步骤：将半导体材料层从气相沉积到加热的中空载体主体的外表面上，或者在两个承载体间隔开的相互远离的表面上 并且之后从如此形成的层或层去除载体主体或本体。 每个承载体被位于所述中空载体内的加热器主体或所述间隔开的载体之间间接加热，并被加热到高于半导体材料沉积温度的温度。

    Method of manufacturing shaped hollow bodies
    4.
    发明授权
    Method of manufacturing shaped hollow bodies 失效
    成形中空体的制造方法

    公开(公告)号：US3943218A

    公开(公告)日：1976-03-09

    申请号：US369830

    申请日：1973-06-14

    申请人： Wolfgang Dietze ,  Andreas Kasper

    发明人： Wolfgang Dietze ,  Andreas Kasper

    IPC分类号： C01B33/02 ,  C01B33/035 ,  C23C16/01 ,  C23C16/22 ,  C23C16/44 ,  C30B29/60 ,  B29C13/04

    CPC分类号： C23C16/22 ,  C23C16/01

    摘要： A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300.degree. C. in a flowing gas atmosphere, preferably a mixture of H.sub.2 and SiHCl.sub.3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.

    摘要翻译： 一种通过从气态化合物沉积选择性半导体材料到加热的石墨基底上而形成硅或碳化硅的成形中空半导体元件的方法，该加热石墨基底首先在1300℃以上的热气氛中在流动的气体气氛中优选混合 的H 2和SiHCl 3，以便改变衬底的表面特性，由此沉积的半导体材料不与衬底相互作用，使得衬底可以被再次使用。

    Directly heatable semiconductor tubular bodies
    5.
    发明授权
    Directly heatable semiconductor tubular bodies 失效
    可直接加热的半导体管状体

    公开(公告)号：US4345142A

    公开(公告)日：1982-08-17

    申请号：US950452

    申请日：1978-10-11

    申请人： Wolfgang Dietze

    发明人： Wolfgang Dietze

    IPC分类号： C01B33/02 ,  C01B33/035 ,  C23C16/01 ,  C23C16/22 ,  C23C18/12 ,  C30B31/10 ,  C30B31/12 ,  F27B5/14 ,  H01C1/14 ,  H05B3/10

    CPC分类号： C23C16/22 ,  C23C16/01 ,  C30B31/10 ,  C30B31/12 ,  Y10T428/1393

    摘要： Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current.

    摘要翻译： 通过将热可分解的硅化合物的连续的硅或碳化硅层热解沉积到加热的石墨心轴上，直接可加热的管状半导体本体，不间断地从芯棒上除去所沉积的管状体，施加含掺杂剂的漆 或类似物放置在这种管状体的选定的外表面部分上，并使经涂覆的管状体经受足以掺杂身体的选择外部身体部分并使得这种身体经由所施加的电流直接加热的扩散条件。

    Disc support structure
    6.
    发明授权
    Disc support structure 失效
    光盘支持结构

    公开(公告)号：US4093201A

    公开(公告)日：1978-06-06

    申请号：US638299

    申请日：1975-12-08

    申请人： Wolfgang Dietze ,  Richard Mittermeier ,  Gerhard Steinwagner

    发明人： Wolfgang Dietze ,  Richard Mittermeier ,  Gerhard Steinwagner

    IPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/14 ,  B23Q3/00

    CPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/14 ,  Y10S206/832 ,  Y10S269/903

    摘要： A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.

    摘要翻译： 由Si或SiC组成的支撑结构，用于在退火或掺杂期间支撑半导体晶体盘。 通过将气态硅化合物热沉积到类似形状的载体构件上形成具有至少一个平坦侧面的稍微管状的构件，然后将管状构件切割并在垂直于 以形成具有平坦基部和向上延伸的弯曲侧壁的支撑结构。

    Network interface and communication terminal
    7.
    发明授权
    Network interface and communication terminal 失效
    网络接口和通信终端

    公开(公告)号：US5058156A

    公开(公告)日：1991-10-15

    申请号：US405345

    申请日：1989-09-11

    申请人： Wolfgang Dietze

    发明人： Wolfgang Dietze

    IPC分类号： H04L25/05

    CPC分类号： H04L25/05

    摘要： According to the invention, for connections between terminals connected to different networks, the terminals intended for connection to the network having the higher capacity are so equipped that, alternatively (I, II), they could also operate at the network having the lower capacity. In these terminals as well as at the interface between the two networks, simple network interface devices (30, 60) are inserted which insert and extract the filler bits in a suitable manner.

    摘要翻译： 根据本发明，为了连接到不同网络的终端之间的连接，旨在连接到具有较高容量的网络的终端装备得如此，或者（I，II），它们也可以在具有较低容量的网络上运行。 在这些终端中以及在两个网络之间的接口处，插入简单的网络接口设备（30,60），以适当的方式插入和提取填充位。

    Method of deposition of silicon in fine crystalline form
    8.
    发明授权
    Method of deposition of silicon in fine crystalline form 失效
    以细晶形式沉积硅的方法

    公开(公告)号：US4255463A

    公开(公告)日：1981-03-10

    申请号：US058455

    申请日：1979-07-18

    申请人： Ulrich Rucha ,  Wolfgang Dietze

    发明人： Ulrich Rucha ,  Wolfgang Dietze

    IPC分类号： C01B33/02 ,  C01B33/035 ,  C23C16/24

    CPC分类号： C01B33/035

    摘要： Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of deposition, at a temperature lower than optimal temperature for deposition of silicon thereon, maintaining the lower than optimal temperature during a first deposition phase, thereafter raising the temperature of the substrate to the optimal temperature while maintaining the other parameters determining the rate of deposition, and maintaining the optimal temperature for the remainder of the deposition.

    摘要翻译： 从含硅反应气体在基底上沉积细晶形式的硅的方法，其包括以反应气体的固定摩尔比和沉积工艺选择的通量，设定基板的沉积速率确定温度， 在沉积开始时，在低于用于沉积硅的最佳温度的温度下，在第一沉积阶段保持低于最佳温度，然后将衬底的温度升高至最佳温度，同时保持其它参数确定速率 的沉积，并保持沉积的其余部分的最佳温度。