公开(公告)号：US11881464B2

公开(公告)日：2024-01-23

申请号：US17210674

申请日：2021-03-24

申请人： Wolfspeed, Inc.

发明人： Basim Noori ,  Marvin Marbell ,  Kwangmo Chris Lim ,  Qianli Mu

IPC分类号： H01L23/66 ,  H01L23/538 ,  H01L25/065 ,  H01L29/16 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213

CPC分类号： H01L23/66 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657 ,  H01L29/1608 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H01L2223/6611 ,  H01L2223/6655

摘要： A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

公开(公告)号：US11533024B2

公开(公告)日：2022-12-20

申请号：US16911757

申请日：2020-06-25

申请人： Wolfspeed, Inc.

发明人： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC分类号： H01L23/047 ,  H03F3/19 ,  H01L23/367 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16 ,  H03F1/02 ,  H03F1/56

摘要： RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

公开(公告)号：US11356070B2

公开(公告)日：2022-06-07

申请号：US16888957

申请日：2020-06-01

申请人： Wolfspeed, Inc.

发明人： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC分类号： H03F3/72 ,  H01Q1/52 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03H2/00

摘要： RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

公开(公告)号：US20240088838A1

公开(公告)日：2024-03-14

申请号：US18517065

申请日：2023-11-22

申请人： Wolfspeed, Inc.

发明人： Basim Noori ,  Marvin Marbell ,  Qianli Mu ,  Kwangmo Chris Lim ,  Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim

IPC分类号： H03F1/56 ,  H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H01L29/778 ,  H03F3/193

CPC分类号： H03F1/565 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/08 ,  H01L29/778 ,  H03F3/193 ,  H01L2224/08225 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

摘要： RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

公开(公告)号：US20230075505A1

公开(公告)日：2023-03-09

申请号：US17466783

申请日：2021-09-03

申请人： Wolfspeed, Inc.

发明人： Fabian Radulescu ,  Basim Noori ,  Scott Sheppard ,  Kwangmo Chris Lim

IPC分类号： H01L23/00 ,  H01L29/417 ,  H01L29/423 ,  H01L23/48

摘要： A radio frequency (“RF”) transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.

公开(公告)号：US20240071962A1

公开(公告)日：2024-02-29

申请号：US18502334

申请日：2023-11-06

申请人： Wolfspeed, Inc.

发明人： Basim Noori ,  Marvin Marbell ,  Kwangmo Chris Lim ,  Qianli Mu

IPC分类号： H01L23/66 ,  H01L23/538 ,  H01L25/065 ,  H01L29/16 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213

CPC分类号： H01L23/66 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657 ,  H01L29/1608 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H01L2223/6611 ,  H01L2223/6655

摘要： A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

公开(公告)号：US20220321071A1

公开(公告)日：2022-10-06

申请号：US17848546

申请日：2022-06-24

申请人： Wolfspeed, Inc.

发明人： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu ,  Michael DeVita

IPC分类号： H03F3/72 ,  H01Q1/52 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03H2/00

摘要： A transistor amplifier includes a die comprising a gate terminal, a drain terminal, and a source terminal, a circuitry module on the transistor die and electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, and one or more passive electrical components on a first surface of the circuitry module. The one or more passive electrical components are electrically coupled between the gate terminal and a first lead of the transistor amplifier and/or between the drain terminal and a second lead of the transistor amplifier.

公开(公告)号：US11863130B2

公开(公告)日：2024-01-02

申请号：US17215456

申请日：2021-03-29

申请人： Wolfspeed, Inc.

发明人： Basim Noori ,  Marvin Marbell ,  Qianli Mu ,  Kwangmo Chris Lim ,  Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim

IPC分类号： H03F3/187 ,  H03F1/56 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L29/778 ,  H03F3/193

CPC分类号： H03F1/565 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/08 ,  H01L29/778 ,  H03F3/193 ,  H01L2224/08225 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

摘要： RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

公开(公告)号：US11670605B2

公开(公告)日：2023-06-06

申请号：US16906610

申请日：2020-06-19

申请人： Wolfspeed, Inc.

发明人： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu

IPC分类号： H01L23/66 ,  H03F1/08 ,  H03F3/195

CPC分类号： H01L23/66 ,  H03F1/086 ,  H03F3/195 ,  H01L2223/6616 ,  H01L2223/6655 ,  H03F2200/451

摘要： A transistor amplifier includes a group III-nitride based amplifier die including a gate terminal, a drain terminal, and a source terminal on a first surface of the amplifier die and an interconnect structure electrically bonded to the gate terminal, drain terminal and source terminal of the amplifier die on the first surface of the amplifier die and electrically bonded to an input path and output path of the transistor amplifier.

公开(公告)号：US20220263482A1

公开(公告)日：2022-08-18

申请号：US17737054

申请日：2022-05-05

申请人： Wolfspeed, Inc.

发明人： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC分类号： H03F3/72 ,  H01Q1/52 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03H2/00

摘要： RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.