摘要:
Disclosed herein is a middle- or large-sized battery module having a structure in which two or more plate-shaped secondary battery cells (‘battery cells’) are arranged in a lateral direction thereof, wherein the battery cells have electrode terminals arranged in the same direction, plate-shaped electrode terminal connecting members to electrically connect the battery cells to one another are electrically connected to oriented surfaces of the electrode terminals of the battery cells, each of the electrode terminal connecting members is provided at a top and/or bottom thereof with a coupling structure to interconnect electrode terminal connecting members, and at least one end of an insulating joint member coupled in the coupling structure is supported by a module case.
摘要:
Disclosed herein is a middle- or large-sized battery module having a structure in which two or more plate-shaped secondary battery cells (‘battery cells’) are arranged in a lateral direction thereof, wherein the battery cells have electrode terminals arranged in the same direction, plate-shaped electrode terminal connecting members to electrically connect the battery cells to one another are electrically connected to oriented surfaces of the electrode terminals of the battery cells, each of the electrode terminal connecting members is provided at a top and/or bottom thereof with a coupling structure to interconnect electrode terminal connecting members, and at least one end of an insulating joint member coupled in the coupling structure is supported by a module case.
摘要:
Disclosed herein is a spacer used in a battery pack having a plurality of battery cells mounted in a pack case, wherein the spacer is configured to have a top shape corresponding to the inner shape of the pack case in vertical section and a bottom shape corresponding to the outer circumferential shape of the battery cells in vertical section so that the spacer can be mounted in a space defined between the battery cells and the pack case, grooves, in which electrical connection members are mounted, are formed at the top of the spacer, and the spacer includes at least one temperature detection member mounting part including a horizontal opening open in one direction or in opposite directions and a vertical opening communicating with the horizontal opening so that a temperature detection member is inserted from one side of the spacer and mounted in a space defined between the battery cells. In the spacer, the temperature detection member is inserted into the horizontal opening from one side of the spacer so that the temperature detection member can be fixed between the battery cells and the spacer, and therefore, a process of bonding the temperature detection member is omitted. Also, the electrical connection members for electrical connection between the battery cells and between the battery cells and a protection circuit member are mounted in the grooves so that the electrical connection members are fixed in an insulated state, thereby preventing the occurrence of a short circuit due to vibration or impact and simplifying an assembly process.
摘要:
Disclosed herein is a spacer used in a battery pack having a plurality of battery cells mounted in a pack case, wherein the spacer is configured to have a top shape corresponding to the inner shape of the pack case in vertical section and a bottom shape corresponding to the outer circumferential shape of the battery cells in vertical section so that the spacer can be mounted in a space defined between the battery cells and the pack case, grooves, in which electrical connection members are mounted, are formed at the top of the spacer, and the spacer includes at least one temperature detection member mounting part including a horizontal opening open in one direction or in opposite directions and a vertical opening communicating with the horizontal opening so that a temperature detection member is inserted from one side of the spacer and mounted in a space defined between the battery cells. In the spacer, the temperature detection member is inserted into the horizontal opening from one side of the spacer so that the temperature detection member can be fixed between the battery cells and the spacer, and therefore, a process of bonding the temperature detection member is omitted. Also, the electrical connection members for electrical connection between the battery cells and between the battery cells and a protection circuit member are mounted in the grooves so that the electrical connection members are fixed in an insulated state, thereby preventing the occurrence of a short circuit due to vibration or impact and simplifying an assembly process.
摘要:
Disclosed herein is an electrode terminal connecting member to connect two or more battery cells in series and/or in parallel to each other so as to manufacture a battery cell core pack, wherein the electrode terminal connecting member includes a plate body having a size sufficient to connect electrode terminals of the battery cells arranged in at least 2×2 matrix to each other, and the electrode terminals of the battery cells are directly coupled to the plate body in a state in which the plate body is not bent.
摘要:
Disclosed herein is an electrode terminal connecting member to connect two or more battery cells in series and/or in parallel to each other so as to manufacture a battery cell core pack, wherein the electrode terminal connecting member includes a plate body having a size sufficient to connect electrode terminals of the battery cells arranged in at least 2×2 matrix to each other, and the electrode terminals of the battery cells are directly coupled to the plate body in a state in which the plate body is not bent.
摘要:
A magnetic tunnel junction device includes a first electrode having a curved top surface, a magnetic tunnel junction layer formed along the top surface of the first electrode, and a second electrode formed on the magnetic tunnel junction layer.
摘要:
A method of fabricating a non-volatile memory device includes: forming a tunnel insulation layer pattern and a floating gate electrode layer pattern over a semiconductor substrate; forming an isolation trench by etching an exposed portion of the semiconductor substrate so that the isolation trench is aligned with the tunnel insulation layer pattern and the floating gate electrode layer pattern; forming an isolation layer by filling the isolation trench with a filling insulation layer; forming a hafnium-rich hafnium silicon oxide layer over the isolation layer and the floating gate electrode layer pattern; forming a hafnium-rich hafnium silicon oxynitride layer by carrying out a first nitridation on the hafnium-rich hafnium silicon oxide layer; forming a silicon-rich hafnium silicon oxide layer over the hafnium-rich hafnium silicon oxynitride layer; forming a silicon-rich hafnium silicon oxynitride layer by carrying out a second nitridation on the silicon-rich hafnium silicon oxide layer; and forming a control gate electrode layer over the silicon-rich hafnium silicon oxynitride layer.
摘要:
Methods and apparatus for selectively invoking receive diversity during power-up/initial acquisition and out of service modes are disclosed. A method can include selectively enabling receive diversity based on an initial acquisition attempt by one of the receive chains in a wireless device having multiple receive chains. A method can also include enabling receive diversity based on a predetermined list of channels to be acquired. A predetermined list of channels is a subset of a plurality of channels that may be acquired. Other aspects, embodiments, and features are also claimed and described.
摘要:
A method for manufacturing a non-volatile memory device having a charge trap layer comprises in one embodiment: forming a first dielectric layer over a semiconductor substrate; forming a second dielectric layer having a higher dielectric constant than that of the first dielectric layer over the first dielectric layer; forming a nitride buffer layer for preventing an interfacial reaction over the second dielectric layer; forming a third dielectric layer by supplying a radical oxidation source onto the nitride buffer layer to oxidize the nitride buffer layer, thereby forming a tunneling layer comprising the first, second, and third dielectric layers; and forming a charge trap layer, a shielding layer, and a control gate electrode layer over the tunneling layer.