公开(公告)号：US20130105901A1

公开(公告)日：2013-05-02

申请号：US13339787

申请日：2011-12-29

申请人： Woo-Young PARK ,  Kee-Jeung Lee ,  Yun-Hyuck Ji ,  Seung-Mi Lee

发明人： Woo-Young PARK ,  Kee-Jeung Lee ,  Yun-Hyuck Ji ,  Seung-Mi Lee

IPC分类号： H01L27/088 ,  H01L21/28 ,  H01L21/336 ,  H01L29/772

CPC分类号： H01L29/4966 ,  H01L21/02164 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/66568 ,  H01L29/78

摘要： A semiconductor device includes a gate stacked structure including a gate dielectric layer over a semiconductor substrate, a metal layer formed over the gate dielectric layer, and a capping layer formed over the metal layer, where the capping layer includes a chemical element with a higher concentration at an interface between the capping layer and the metal layer than another region of the capping layer and the chemical element is operable to control an effective work function (eWF) of the gate stacked structure.

公开(公告)号：US20130244394A1

公开(公告)日：2013-09-19

申请号：US13494400

申请日：2012-06-12

申请人： Beom-Yong KIM ,  Kee-Jeung LEE ,  Yun-Hyuck JI ,  Seung-Mi LEE ,  Jae-Hyoung KOO ,  Kwan-Woo DO ,  Kyung-Woong PARK ,  Ji-Hoon AHN ,  Woo-Young PARK

发明人： Beom-Yong KIM ,  Kee-Jeung LEE ,  Yun-Hyuck JI ,  Seung-Mi LEE ,  Jae-Hyoung KOO ,  Kwan-Woo DO ,  Kyung-Woong PARK ,  Ji-Hoon AHN ,  Woo-Young PARK

IPC分类号： H01L21/02 ,  H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

摘要翻译： 制造电容器的方法包括：在半导体衬底上形成第一硅层，其中所述第一硅层掺杂有掺杂剂; 在所述第一硅层上形成未掺杂的第二硅层; 通过蚀刻第二硅层和第一硅层形成开口; 在开口中形成存储节点; 以及去除所述第一硅层和所述第二硅层。

公开(公告)号：US20120153406A1

公开(公告)日：2012-06-21

申请号：US13223542

申请日：2011-09-01

申请人： Woo-Young PARK ,  Kee-Jeung Lee ,  Tae-Yoon Kim ,  Yun-Hyuck Ji

发明人： Woo-Young PARK ,  Kee-Jeung Lee ,  Tae-Yoon Kim ,  Yun-Hyuck Ji

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate, forming a dipole capping layer over the gate dielectric layer, stacking a metal gate layer and a polysilicon layer over the dipole capping layer, and forming a gate pattern by etching the polysilicon layer, the metal gate layer, the dipole capping layer, and the gate dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成栅介质层，在栅介电层上形成偶极覆盖层，在偶极覆盖层上堆叠金属栅极层和多晶硅层，并通过蚀刻形成栅极图案 多晶硅层，金属栅极层，偶极覆盖层和栅极介电层。

公开(公告)号：US20120025327A1

公开(公告)日：2012-02-02

申请号：US13027379

申请日：2011-02-15

申请人： Yun-Hyuck JI ,  Tae-Yoon KIM ,  Seung-Mi LEE ,  Woo-Young PARK

发明人： Yun-Hyuck JI ,  Tae-Yoon KIM ,  Seung-Mi LEE ,  Woo-Young PARK

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/283

CPC分类号： H01L21/283 ,  H01L21/823462 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.

摘要翻译： 半导体器件包括形成在衬底上并具有高介电常数的栅极绝缘层，形成在栅极绝缘层上的栅极电极和形成在衬底和栅极绝缘层之间的功函数控制层，并且引起功函数偏移 栅电极。

公开(公告)号：US20130069166A1

公开(公告)日：2013-03-21

申请号：US13337443

申请日：2011-12-27

申请人： Yun-Hyuck JI ,  Woo-Young PARK

发明人： Yun-Hyuck JI ,  Woo-Young PARK

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L27/0922 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode layer in the first region has a work function lower than a work function of a metal electrode formed from the metal electrode layer in the second region and a nitrogen concentration of the metal electrode of the first region is smaller than a nitrogen concentration of the metal electrode of the second region.

公开(公告)号：US20130171797A1

公开(公告)日：2013-07-04

申请号：US13463215

申请日：2012-05-03

申请人： Kyung-Woong PARK ,  Kee-Jeung LEE ,  Jae-Hyoung KOO ,  Kwan-Woo DO ,  Ji-Hoon AHN ,  Woo-Young PARK

发明人： Kyung-Woong PARK ,  Kee-Jeung LEE ,  Jae-Hyoung KOO ,  Kwan-Woo DO ,  Ji-Hoon AHN ,  Woo-Young PARK

IPC分类号： H01L21/31 ,  H01L21/336 ,  H01L21/02

CPC分类号： H01L21/02183 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/90

摘要： A method of forming a multi-component dielectric layer on the surface of a substrate by atomic layer deposition includes injecting a cocktail source of a plurality of sources at least having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a surface of a substrate by injecting the cocktail source, performing a first purge process to remove a non-adsorbed portion of the cocktail source, injecting a reactant to react with the adsorbed cocktail source, wherein a multi-component layer is formed by the reaction between the reactant and the absorbed cocktail source, and performing a second purge process to remove reaction byproducts and an unreacted portion of the reactant.

摘要翻译： 通过原子层沉积在基板的表面上形成多组分介电层的方法包括：注入至少具有环戊二烯基配体的多个源的混合源，其中混合物源通过以下方式吸附在基材的表面上： 注射鸡尾酒来源，进行第一吹扫过程以去除混合物源的未吸附部分，注入反应物以与吸附的混合物源反应，其中通过反应物与被吸收的混合物之间的反应形成多组分层 鸡尾酒来源，并进行第二吹扫过程以除去反应副产物和反应物的未反应部分。