公开(公告)号：US11342482B2

公开(公告)日：2022-05-24

申请号：US16665358

申请日：2019-10-28

Applicant: Wright State University ,  The Government of the United States of America, As Represented By The Secretary Of The Navy ,  OHIO STATE INNOVATION FOUNDATION

Inventor： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger ,  David Storm ,  David Meyer

IPC: H01S5/34 ,  H01L33/06 ,  H01L29/88 ,  H01L33/32 ,  H01S5/343 ,  H01S5/14 ,  H01S5/187 ,  H01S5/02 ,  H01L33/00 ,  H01L33/12 ,  C02F1/32 ,  H01L29/20 ,  H01S5/042 ,  H01L33/50 ,  H01S5/183 ,  H01S5/30

Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

公开(公告)号：US20200168762A1

公开(公告)日：2020-05-28

申请号：US16665358

申请日：2019-10-28

Applicant: Wright State University

Inventor： Elliott R. Brownj ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger ,  David Storm ,  David Meyer

IPC: H01L33/06 ,  H01L29/20 ,  C02F1/32 ,  H01L33/12 ,  H01L33/00 ,  H01S5/042 ,  H01S5/02 ,  H01S5/187 ,  H01S5/14 ,  H01S5/343 ,  H01L33/32 ,  H01L29/88 ,  H01S5/34

Abstract: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.