公开(公告)号：US11342482B2

公开(公告)日：2022-05-24

申请号：US16665358

申请日：2019-10-28

申请人： Wright State University ,  The Government of the United States of America, As Represented By The Secretary Of The Navy ,  OHIO STATE INNOVATION FOUNDATION

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger ,  David Storm ,  David Meyer

IPC分类号： H01S5/34 ,  H01L33/06 ,  H01L29/88 ,  H01L33/32 ,  H01S5/343 ,  H01S5/14 ,  H01S5/187 ,  H01S5/02 ,  H01L33/00 ,  H01L33/12 ,  C02F1/32 ,  H01L29/20 ,  H01S5/042 ,  H01L33/50 ,  H01S5/183 ,  H01S5/30

摘要： Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

公开(公告)号：US11916162B2

公开(公告)日：2024-02-27

申请号：US17083286

申请日：2020-10-28

申请人： Wright State University

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger

IPC分类号： H01S5/34 ,  B82Y20/00 ,  H01L33/00 ,  H01L33/06 ,  H01S5/30 ,  H01S5/343 ,  H01S5/347 ,  G01S7/481 ,  H01L27/15 ,  H01S5/065 ,  H04N5/33

CPC分类号： H01L33/0025 ,  B82Y20/00 ,  H01L33/0029 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34313 ,  H01S5/347 ,  G01S7/4815 ,  H01L27/15 ,  H01S5/0657 ,  H04N5/33

摘要： A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.

公开(公告)号：US20200168762A1

公开(公告)日：2020-05-28

申请号：US16665358

申请日：2019-10-28

申请人： Wright State University

发明人： Elliott R. Brownj ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger ,  David Storm ,  David Meyer

IPC分类号： H01L33/06 ,  H01L29/20 ,  C02F1/32 ,  H01L33/12 ,  H01L33/00 ,  H01S5/042 ,  H01S5/02 ,  H01S5/187 ,  H01S5/14 ,  H01S5/343 ,  H01L33/32 ,  H01L29/88 ,  H01S5/34

摘要： Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

公开(公告)号：US20220020896A1

公开(公告)日：2022-01-20

申请号：US17083286

申请日：2020-10-28

申请人： Wright State University

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger

IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/06 ,  H01S5/343 ,  H01S5/347

摘要： A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.