公开(公告)号：US20180076152A1

公开(公告)日：2018-03-15

申请号：US15810076

申请日：2017-11-12

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Gaolin ZHENG ,  Ling-yuan HONG ,  Xiaoxiong LIN ,  Feng WANG ,  Su-hui LIN ,  Chia-hung CHANG

IPC: H01L23/60 ,  H01L33/64 ,  H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L23/60 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L33/648 ,  H01L2933/0016

Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≧3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.

公开(公告)号：US20210083145A1

公开(公告)日：2021-03-18

申请号：US17105294

申请日：2020-11-25

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd

Inventor： Feng WANG ,  Gong CHEN ,  Hongwei XIA ,  Yu ZHAN ,  Ling-Yuan HONG ,  Su-Hui LIN ,  Kang-Wei PENG ,  Chia-Hung CHANG

IPC: H01L33/22 ,  H01L33/14

Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.