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    Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip
    3.
    发明申请
    Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip 有权

    公开(公告)号：US20230088776A1

    公开(公告)日：2023-03-23

    申请号：US17806497

    申请日：2022-06-12

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe HE ,  Suhui LIN ,  Jiansen ZHENG ,  Kangwei PENG ,  Xiaoxiong LIN ,  Chenke HSU

    IPC: H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A light emitting diode includes: a light emitting layer arranged on at least part of a first semiconductor layer, and a second semiconductor layer; a local defect region over a portion of the second semiconductor layer and extending downward to the first semiconductor layer; a metal layer over a portion of the second semiconductor layer; an insulating layer covering the metal layer, the second and first semiconductor layers in the local defect region, with opening structures over the local defect region and the metal layer, respectively; and an electrode structure over the insulating layer and having a first layer and a second layer, and including a first-type electrode region and a second-type electrode region; wherein an upper surface and a lower surface of the first layer are not flat, and a lower surface of the second layer are both flat.

    Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip
    4.
    发明申请
    Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip 审中-公开

    公开(公告)号：US20200313059A1

    公开(公告)日：2020-10-01

    申请号：US16900538

    申请日：2020-06-12

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe HE ,  Suhui LIN ,  Jiansen ZHENG ,  Kangwei PENG ,  Xiaoxiong LIN ,  Chenke HSU

    IPC: H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.

    Flip-Chip LED Structure and Fabrication Method
    6.
    发明申请
    Flip-Chip LED Structure and Fabrication Method 审中-公开
    倒装芯片LED结构及制作方法

    公开(公告)号：US20160365488A1

    公开(公告)日：2016-12-15

    申请号：US15236434

    申请日：2016-08-13

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe HE ,  Su-hui LIN ,  Jiansen ZHENG ,  Kangwei PENG ,  Xiaoxiong LIN ,  Chen-ke HSU

    IPC: H01L33/46 ,  H01L33/44 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

    Abstract: A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.

    Abstract translation: 倒装芯片LED包括：基板; 在所述衬底上的外延层，其中，所述外延层包括：第一半导体层，第二半导体层和在所述第一半导体层和所述第二半导体层之间的发光层; 至少一个开口结构，其处于外延层边缘并延伸到衬底表面，使得外延层的侧壁的部分和衬底表面暴露，使得外延层被分为外延体层和 屏障结构; 以及作为金属电极隔离层的开口结构上的绝缘层。

    Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip
    8.
    发明申请
    Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip 审中-公开

    公开(公告)号：US20190267528A1

    公开(公告)日：2019-08-29

    申请号：US16409090

    申请日：2019-05-10

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe HE ,  Suhui LIN ,  Jiansen ZHENG ,  Kangwei PENG ,  Xiaoxiong LIN ,  Chenke HSU

    IPC: H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.

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