公开(公告)号：US06296712B1

公开(公告)日：2001-10-02

申请号：US09055689

申请日：1998-04-06

申请人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

发明人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/68735

摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

摘要翻译： 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

公开(公告)号：US6020035A

公开(公告)日：2000-02-01

申请号：US740381

申请日：1996-10-29

申请人： Anand Gupta ,  Mohan Bhan ,  Sudhakar Subrahmanyam

发明人： Anand Gupta ,  Mohan Bhan ,  Sudhakar Subrahmanyam

IPC分类号： C23C14/56 ,  C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/316 ,  B05D3/06 ,  B08B5/00 ,  H05H1/02

CPC分类号： C23C14/564 ,  C23C16/4404 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32477 ,  H01J37/32862 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  Y10S438/905

摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF.sub.2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.

摘要翻译： 一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进​​方法。 在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。 沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。 在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。 增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。 当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。 在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。

公开(公告)号：US06223685B1

公开(公告)日：2001-05-01

申请号：US09452551

申请日：1999-12-01

申请人： Anand Gupta ,  Mohan Bhan ,  Sudhakar Subrahmanyam

发明人： Anand Gupta ,  Mohan Bhan ,  Sudhakar Subrahmanyam

IPC分类号： C23C1600

CPC分类号： C23C14/564 ,  C23C16/4404 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32477 ,  H01J37/32862 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  Y10S438/905

摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.

摘要翻译： 一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进​​方法。 在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。 沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。 在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。 增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。 当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。 在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。