公开(公告)号：US06296712B1

公开(公告)日：2001-10-02

申请号：US09055689

申请日：1998-04-06

申请人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

发明人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/68735

摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

摘要翻译： 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

公开(公告)号：US06374512B1

公开(公告)日：2002-04-23

申请号：US09631051

申请日：2000-08-01

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： F26B308

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背面和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US06096135A

公开(公告)日：2000-08-01

申请号：US120005

申请日：1998-07-21

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  H01L21/205 ,  H01L21/68 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背侧和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US20050139160A1

公开(公告)日：2005-06-30

申请号：US11059846

申请日：2005-02-16

申请人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

发明人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。

公开(公告)号：US20060292874A1

公开(公告)日：2006-12-28

申请号：US11468156

申请日：2006-08-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体 以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。 该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

公开(公告)号：US20070254481A1

公开(公告)日：2007-11-01

申请号：US11766121

申请日：2007-06-21

申请人： MORIS KORI ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： MORIS KORI ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/285

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到​​沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成 在原子层沉积（ALD）过程中在基底上形成钨成核层。 该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

公开(公告)号：US20060128132A1

公开(公告)日：2006-06-15

申请号：US11338565

申请日：2006-01-24

申请人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

发明人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US20050059241A1

公开(公告)日：2005-03-17

申请号：US10951354

申请日：2004-09-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US20050271814A1

公开(公告)日：2005-12-08

申请号：US11198140

申请日：2005-08-05

申请人： Mei Chang ,  Lawrence Lei ,  Walter Glenn

发明人： Mei Chang ,  Lawrence Lei ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

公开(公告)号：US20060223286A1

公开(公告)日：2006-10-05

申请号：US11423535

申请日：2006-06-12

申请人： Barry Chin ,  Alfred Mak ,  Lawrence Lei ,  Ming Xi ,  Hua Chung ,  Ken Lai ,  Jeong Byun

发明人： Barry Chin ,  Alfred Mak ,  Lawrence Lei ,  Ming Xi ,  Hua Chung ,  Ken Lai ,  Jeong Byun

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。