摘要:
A method and system for storing data in a multi-level cell (MLC) flash memory device are described. The method includes receiving data for storage in the flash memory device, the flash memory device comprising an array of MLC flash memory cells, and encoding the received data into non-binary symbols according to a trellis-coded modulation scheme. The method further includes writing each of the non-binary symbols to a respective flash memory cell set, wherein each flash memory cell set comprises a plurality of MLC flash memory cells.
摘要:
The subject disclosure describes a method for reducing a sector error rate in a flash memory device, the method comprising, identifying a first program verify level having a first value, selecting an adjustment value for the first program verify level and programming the adjustment value to the first program verify level to replace the first value and to shift a first programming distribution associated with the first program verify level, wherein the shift in the first programming distribution is associated with a decrease in a sector error rate, wherein the shift in the first programming distribution is associated with an increase in a bit error rate. A flash storage device and computer-readable media are also provided.
摘要:
The subject disclosure provides a method for generating a read-level error signal, comprising, correcting a plurality of bits read from a flash memory, determining a first error rate of a first error type corrected in the bits and determining a second error rate of a second error type corrected in the bits. In certain aspects, methods of the subject technology further provides steps for comparing the first error rate with the second error rate and generating a read-level error signal based on the comparison of the first error rate and the second error rate. A decoder and flash storage device are also provided.
摘要:
The subject disclosure describes a method for reducing a sector error rate in a flash memory device, the method comprising, identifying a first program verify level having a first value, selecting an adjustment value for the first program verify level and programming the adjustment value to the first program verify level to replace the first value and to shift a first programming distribution associated with the first program verify level, wherein the shift in the first programming distribution is associated with a decrease in a sector error rate, wherein the shift in the first programming distribution is associated with an increase in a bit error rate. A flash storage device and computer-readable media are also provided.
摘要:
Disclosed is an system and method for determining a probability that a memory cell was programmed to a certain input level. An output level is received from a memory cell and a probability is determined that the output level corresponds to each of a plurality of programming levels. Each probability is determined as a function of the output level, a mean value of a distribution corresponding to the programming level, and a variance from the mean value with the variance being determined by a relative position of the output level with respect to the mean value. A probability value is generated as a function of the plurality of determined probabilities and then provided for use at a demodulator.
摘要:
A method and system for storing data in a multi-level cell (MLC) flash memory device are described. The method includes receiving data for storage in the flash memory device, the flash memory device comprising an array of MLC flash memory cells, and encoding the received data into non-binary symbols according to a trellis-coded modulation scheme. The method further includes writing each of the non-binary symbols to a respective flash memory cell set, wherein each flash memory cell set comprises a plurality of MLC flash memory cells.
摘要:
An interleaver is constructed based on the joint constraints imposed in the channel and the code domains. A sequentially optimal algorithm is used for mapping bits in the inter-symbol interference (ISI) domain to the code domain by taking into account the ISI memory depth and the connectivity of the nodes within the parity check matrix. Primary design constraints are considered such as the parallelism factor so that the proposed system is hardware compliant in meeting high throughput requirements.
摘要:
To allow a single LDPC decoder to operate on both 512 B blocks and 4 KB blocks with comparable error correction performance, 512 KB blocks are interlaced to form a 1 KB data sequence, and four sequential 1 KB data sequences are concatenated to form a 4 KB sector. A de-interlacer between the detector and decoder forms multiple data sequence from a single data sequence output by the detector. The multiple data sequences are separately processed by a de-interleaver between the de-interlacer and the LDPC decoder, by the LDPC decoder, and by an interleaver at the output of the LDPD decoder. An interlacer recombines the multiple data sequences into a single output. Diversity may be improved by feeding interleaver seeds for respective codewords into the de-interleaver and interleaver during processing.
摘要:
To allow a single LDPC decoder to operate on both 512 B blocks and 4 KB blocks with comparable error correction performance, 512 KB blocks are interlaced to form a 1 KB data sequence, and four sequential 1 KB data sequences are concatenated to form a 4 KB sector. A de-interlacer between the detector and decoder forms multiple data sequence from a single data sequence output by the detector. The multiple data sequences are separately processed by a de-interleaver between the de-interlacer and the LDPC decoder, by the LDPC decoder, and by an interleaver at the output of the LDPD decoder. An interlacer recombines the multiple data sequences into a single output. Diversity may be improved by feeding interleaver seeds for respective codewords into the de-interleaver and interleaver during processing.
摘要:
Disclosed is an system and method for reading a flash memory cell with an adjusted read level. A current read level is adjusted to a new read level associated with increasing a first error rate to decrease a second error rate. The first error rate is associated with determining that the most significant bit of the flash memory cell is a binary 1 and the second error rate is associated with determining that the most significant bit is a binary 0. On reading the memory cell, a probability value is generated for the most significant bit, the probability being higher if the bit is equivalent to a binary 0 than if the bit is equivalent to a binary 1.