摘要:
A method and system for storing data in a multi-level cell (MLC) flash memory device are described. The method includes receiving data for storage in the flash memory device, the flash memory device comprising an array of MLC flash memory cells, and encoding the received data into non-binary symbols according to a trellis-coded modulation scheme. The method further includes writing each of the non-binary symbols to a respective flash memory cell set, wherein each flash memory cell set comprises a plurality of MLC flash memory cells.
摘要:
The subject disclosure describes a method for reducing a sector error rate in a flash memory device, the method comprising, identifying a first program verify level having a first value, selecting an adjustment value for the first program verify level and programming the adjustment value to the first program verify level to replace the first value and to shift a first programming distribution associated with the first program verify level, wherein the shift in the first programming distribution is associated with a decrease in a sector error rate, wherein the shift in the first programming distribution is associated with an increase in a bit error rate. A flash storage device and computer-readable media are also provided.
摘要:
Disclosed is an system and method for determining a probability that a memory cell was programmed to a certain input level. An output level is received from a memory cell and a probability is determined that the output level corresponds to each of a plurality of programming levels. Each probability is determined as a function of the output level, a mean value of a distribution corresponding to the programming level, and a variance from the mean value with the variance being determined by a relative position of the output level with respect to the mean value. A probability value is generated as a function of the plurality of determined probabilities and then provided for use at a demodulator.
摘要:
A method and system for storing data in a multi-level cell (MLC) flash memory device are described. The method includes receiving data for storage in the flash memory device, the flash memory device comprising an array of MLC flash memory cells, and encoding the received data into non-binary symbols according to a trellis-coded modulation scheme. The method further includes writing each of the non-binary symbols to a respective flash memory cell set, wherein each flash memory cell set comprises a plurality of MLC flash memory cells.
摘要:
The subject disclosure provides a method for generating a read-level error signal, comprising, correcting a plurality of bits read from a flash memory, determining a first error rate of a first error type corrected in the bits and determining a second error rate of a second error type corrected in the bits. In certain aspects, methods of the subject technology further provides steps for comparing the first error rate with the second error rate and generating a read-level error signal based on the comparison of the first error rate and the second error rate. A decoder and flash storage device are also provided.
摘要:
The subject disclosure describes a method for reducing a sector error rate in a flash memory device, the method comprising, identifying a first program verify level having a first value, selecting an adjustment value for the first program verify level and programming the adjustment value to the first program verify level to replace the first value and to shift a first programming distribution associated with the first program verify level, wherein the shift in the first programming distribution is associated with a decrease in a sector error rate, wherein the shift in the first programming distribution is associated with an increase in a bit error rate. A flash storage device and computer-readable media are also provided.
摘要:
Disclosed is an system and method for determining a probability that a memory cell was programmed to a certain input level. An output level is received from a memory cell and a probability is determined that the output level corresponds to each of a plurality of programming levels. Each probability is determined as a function of the output level, a mean value of a distribution corresponding to the programming level, and a variance from the mean value with the variance being determined by a relative position of the output level with respect to the mean value. A probability value is generated as a function of the plurality of determined probabilities and then provided for use at a demodulator.
摘要:
Disclosed is an apparatus and method for operating a multi-level cell (MLC) flash memory circuit. Data is read from a memory block of a plurality of memory blocks in the MLC flash memory circuit, wherein each of the plurality of memory blocks can operate in one of at least three modes of operation comprising an MLC mode, a single-level cell (SLC) mode and a defective mode, and wherein the memory block is initially operating in the MLC mode. Error correction is performed on the read data to correct read errors in the read data. A determination is made if a number of bits corrected by the error correction exceeds a predetermined threshold value. If the number of bits corrected by the error correction exceeds the predetermined threshold value, the operating mode of the memory block is switched from the MLC mode to the SLC mode.
摘要:
A MAP detector system operates in a parallel mode for on-the-fly operations and in a serial mode for error recovery operations. In the parallel mode, a plurality of Viterbi operators process a block of input sampled data in parallel. In the serial mode a selected forward Viterbi operator and two associated reverse Viterbi operators process the entire block of data, in order, to produce soft decision data.
摘要:
A multi-transducer magnetic head includes an array of transducer pairs positioned across at least a portion of a cross section of a magnetic tape path. Each transducer pair includes at least one write transducer and at least one read transducer. Within each transducer pair, a first centerline through the write transducer is generally parallel to a second centerline through the read transducer. Distances between the first and second centerlines within individual transducer pairs increase with distances of the transducer pairs from a head position reference point. In the preferred embodiment, the write transducers have a first pitch and the read transducers have a second pitch. However, the read transducers are biased toward the head position reference point, so that the pitch of the read transducers is smaller than the pitch of the write transducers. The method of determining the positions of the read and write transducers includes (1) dividing the sources of transducer-to-track alignment errors into biased and non-biased sources, (2) calculating preferred margins to compensate for the non-biased sources, and (3) laterally biasing the read transducers, the write transducers, or both to compensate for the biased sources.