DUAL-LENS-GUN ELECTRON BEAM APPARATUS AND METHODS FOR HIGH-RESOLUTION IMAGING WITH BOTH HIGH AND LOW BEAM CURRENTS
    1.
    发明申请
    DUAL-LENS-GUN ELECTRON BEAM APPARATUS AND METHODS FOR HIGH-RESOLUTION IMAGING WITH BOTH HIGH AND LOW BEAM CURRENTS 有权
    双镜头电子束装置和用于高分辨率和低光束电流的高分辨率成像方法

    公开(公告)号:US20140077077A1

    公开(公告)日:2014-03-20

    申请号:US13618760

    申请日:2012-09-14

    IPC分类号: G21K5/04 H01J27/02 H01J37/28

    摘要: One embodiment relates to an electron beam apparatus which includes a dual-lens electron gun for emitting an electron beam. The electron beam is a high beam-current electron beam in a first operating mode and a low beam-current electron beam in a second operating mode. The apparatus further includes a column aperture which is out of the path of the high beam-current electron beam in the first operating mode and is centered about an optical axis of the electron beam apparatus in the second operating mode. Another embodiment relates to an electron gun which includes a first gun lens, a beam limiting aperture, and a second gun lens. The first gun lens focuses the electrons before they pass through the beam-limiting aperture while the second gun lens focuses the electrons after they pass through the beam-limiting aperture. Other embodiments, aspects and features are also disclosed.

    摘要翻译: 一个实施例涉及一种电子束装置,其包括用于发射电子束的双透镜电子枪。 电子束是第一操作模式中的高束流电子束和处于第二操作模式的低束流电子束。 该装置还包括在第一操作模式中超出远光束电子束的路径的列孔径,并且在第二操作模式中围绕电子束装置的光轴居中。 另一个实施例涉及一种电子枪,其包括第一枪形透镜,光束限制孔和第二枪形透镜。 第一个枪形透镜在电子穿过光束限制孔径之前聚焦电子,而第二个枪形透镜在电子通过光束限制孔径后聚焦电子。 还公开了其它实施例,方面和特征。

    ELECTRON BEAM COLUMN AND METHODS OF USING SAME
    2.
    发明申请
    ELECTRON BEAM COLUMN AND METHODS OF USING SAME 有权
    电子束柱及其使用方法

    公开(公告)号:US20120138791A1

    公开(公告)日:2012-06-07

    申请号:US12958174

    申请日:2010-12-01

    IPC分类号: G01N23/00 H01J1/50

    摘要: In one embodiment, a first vacuum chamber of an electron beam column has an opening which is positioned along an optical axis so as to pass a primary electron beam that travels down the column. A source that emits electrons is positioned within the first vacuum chamber. A beam-limiting aperture is configured to pass a limited angular range of the emitted electrons. A magnetic immersion lens is positioned outside of the first vacuum chamber and is configured to immerse the electron source in a magnetic field so as to focus the emitted electrons into the primary electron beam. An objective lens is configured to focus the primary electron beam onto a beam spot on a substrate surface so as to produce scattered electrons from the beam spot. Controllable deflectors are configured to scan the beam spot over an area of the substrate surface. Other features and embodiments are also disclosed.

    摘要翻译: 在一个实施例中,电子束列的第一真空室具有沿着光轴定位的开口,以便通过沿着该列行进的一次电子束。 发射电子的源被定位在第一真空室内。 光束限制孔被配置成通过发射电子的有限角度范围。 磁浸透镜位于第一真空室的外部,并且被配置为将电子源浸入磁场中,以将发射的电子聚焦到一次电子束中。 物镜被配置为将一次电子束聚焦到衬底表面上的束斑上,以便从束斑产生散射的电子。 可控制偏转器被配置为在衬底表面的区域上扫描束斑。 还公开了其它特征和实施例。

    APPARATUS AND METHODS FOR HIGH-RESOLUTION ELECTRON BEAM IMAGING
    3.
    发明申请
    APPARATUS AND METHODS FOR HIGH-RESOLUTION ELECTRON BEAM IMAGING 有权
    用于高分辨率电子束成像的装置和方法

    公开(公告)号:US20130256530A1

    公开(公告)日:2013-10-03

    申请号:US13438543

    申请日:2012-04-03

    IPC分类号: G01N23/00 H01J1/50

    摘要: One embodiment relates to an apparatus for high-resolution electron beam imaging. The apparatus includes an energy filter configured to limit an energy spread of the electrons in the incident electron beam. The energy filter may be formed using a stigmatic Wien filter and a filter aperture. Another embodiment relates to a method of forming an incident electron beam for a high-resolution electron beam apparatus. Another embodiment relates to a stigmatic Wien filter that includes curved conductive electrodes. Another embodiment relates to a stigmatic Wien filter that includes a pair of magnetic yokes and a multipole deflector. Other embodiments, aspects and features are also disclosed.

    摘要翻译: 一个实施例涉及用于高分辨率电子束成像的装置。 该装置包括被配置为限制入射电子束中的电子的能量扩散的能量过滤器。 能量滤波器可以使用固定的维恩滤波器和滤波器孔来形成。 另一实施例涉及形成用于高分辨率电子束装置的入射电子束的方法。 另一实施例涉及一种包括弯曲导电电极的标准维恩滤波器。 另一实施例涉及一种包括一对磁轭和多极偏转器的标准维恩滤波器。 还公开了其它实施例,方面和特征。

    High-Sensitivity and High-Throughput Electron Beam Inspection Column Enabled by Adjustable Beam-Limiting Aperture
    4.
    发明申请
    High-Sensitivity and High-Throughput Electron Beam Inspection Column Enabled by Adjustable Beam-Limiting Aperture 有权
    高灵敏度和高通量电子束检测柱由可调节光圈限制孔

    公开(公告)号:US20110114838A1

    公开(公告)日:2011-05-19

    申请号:US12634444

    申请日:2009-12-09

    IPC分类号: G01N23/00

    摘要: One embodiment relates to an electron-beam apparatus for defect inspection and/or review of substrates or for measuring critical dimensions of features on substrates. The apparatus includes an electron gun and an electron column. The electron gun includes an electron source configured to generate electrons for an electron beam and an adjustable beam-limiting aperture which is configured to select and use one aperture size from a range of aperture sizes. Another embodiment relates to providing an electron beam in an apparatus. Advantageously, the disclosed apparatus and methods reduce spot blur while maintaining a high beam current so as to obtain both high sensitivity and high throughput.

    摘要翻译: 一个实施例涉及一种用于缺陷检查和/或检查基板或用于测量基板上的特征的关键尺寸的电子束装置。 该装置包括电子枪和电子柱。 电子枪包括被配置为产生用于电子束的电子的电子源和可调节的光束限制孔,其被配置为从一定范围的孔径尺寸中选择和使用一个孔径尺寸。 另一实施例涉及在装置中提供电子束。 有利地,所公开的装置和方法在保持高光束电流的同时减少斑点模糊,以便获得高灵敏度和高吞吐量。