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25 条记录 (耗时 0.026 秒)

    Trimming circuit of semiconductor apparatus
    1.
    发明授权
    Trimming circuit of semiconductor apparatus 有权
    半导体装置微调电路

    公开(公告)号：US06462609B2

    公开(公告)日：2002-10-08

    申请号：US09816749

    申请日：2001-03-26

    申请人： Yasuhiro Hashimoto ,  Katsuya Shimizu

    发明人： Yasuhiro Hashimoto ,  Katsuya Shimizu

    IPC分类号： H01H8500

    CPC分类号： H03M1/1057 ,  H03M1/362 ,  H03M1/76 ,  H03M1/785 ,  H03M1/808

    摘要： A relatively compact trimming circuit for hypothetically breaking a fuse includes a resistance bypass circuit connected to a node between a resistor and a fuse. The bypass circuit selectively performs ordinary breakage and hypothetical breakage of the fuse in accordance with a control signal and a data signal. An output changeover circuit connected to the node generates a first output signal in accordance with a state of the fuse during the ordinary breakage. The output changeover circuit generates a second output signal in accordance with the data signal during the hypothetical breakage.

    摘要翻译： 用于假想断开保险丝的相对紧凑的修整电路包括连接到电阻器和保险丝之间的节点的电阻旁路电路。 旁路电路根据控制信号和数据信号选择性地执行熔断器的普通断裂和假想断裂。 连接到节点的输出切换电路在普通断线期间根据保险丝的状态产生第一输出信号。 输出转换电路根据假设断线期间的数据信号产生第二输出信号。

    Photodiode Having Hetero-Junction Between Semi-Insulating Zinc Oxide Semiconductor Thin Film And Silicon
    4.
    发明申请
    Photodiode Having Hetero-Junction Between Semi-Insulating Zinc Oxide Semiconductor Thin Film And Silicon 审中-公开
    具有半绝缘氧化锌半导体薄膜和硅之间的杂环的光电二极管

    公开(公告)号：US20080116454A1

    公开(公告)日：2008-05-22

    申请号：US11795802

    申请日：2005-06-16

    申请人： Katsuya Shimizu

    发明人： Katsuya Shimizu

    IPC分类号： H01L31/0264

    CPC分类号： H01L31/109 ,  H01L31/1836 ,  Y02E10/50

    摘要： A photodiode which eliminates sensitivity reduction in a short wavelength region such as blue, an unavoidable problem posed by doping, resolves response reduction by the scattering of acceptor ions or impurities due to doping of impurities at the same time, and has very high sensitivity and fast response in a UV-IR range. A photodiode having a hetero-junction between a semi-insulating zinc oxide semiconductor thin film and silicon and comprising, basically, n-type silicon (1) and a semi-insulating zinc oxide semiconductor thin film (3) formed on the n-type silicon, characterized in that the n-type silicon forms a cathode region, and the formation of a semi-insulating zinc oxide semiconductor thin film produces a p-type inversion layer (4) at the upper portion of the n-type silicon in contact with the semi-insulating zinc oxide semiconductor thin film, the p-type inversion layer forming a photo-detection region and an anode region.

    摘要翻译： 消除诸如蓝色等短波长区域中的灵敏度降低的光电二极管，这是由掺杂引起的不可避免的问题，由于同时掺杂杂质而导致受体离子或杂质的散射引起的响应减小，并且具有非常高的灵敏度和快速 在UV-IR范围内的响应。 一种在半绝缘氧化锌半导体薄膜和硅之间具有异质结的光电二极管，其基本上包括n型硅（1）和形成在n型上的半绝缘氧化锌半导体薄膜（3） 硅，其特征在于，所述n型硅形成阴极区，并且半绝缘氧化锌半导体薄膜的形成在接触的n型硅的上部产生p型反型层（4） 与半绝缘氧化锌半导体薄膜，p型反型层形成光检测区域和阳极区域。

    Signal detection method, frequency detection method, power consumption control method, signal detecting device, frequency detecting device, power consumption control device and electronic apparatus
    6.
    发明申请
    Signal detection method, frequency detection method, power consumption control method, signal detecting device, frequency detecting device, power consumption control device and electronic apparatus 有权
    信号检测方法，频率检测方法，功耗控制方法，信号检测装置，频率检测装置，功耗控制装置和电子装置

    公开(公告)号：US20060156044A1

    公开(公告)日：2006-07-13

    申请号：US11122123

    申请日：2005-05-05

    申请人： Katsuya Shimizu ,  Hiroko Kinoshita

    发明人： Katsuya Shimizu ,  Hiroko Kinoshita

    IPC分类号： G06F1/26

    CPC分类号： G06F1/3203 ,  Y02D10/126

    摘要： A power consumption control device for detecting output of a pulse signal from an output terminal of an oscillator as an operation monitoring target and outputting a power consumption reduction signal when the pulse signal is not detected in a predetermined period of time, includes a p-type transistor and an n-type transistor which are connected in series and have a gate to which the output terminal is connected, and detecting means for detecting a through current flowing through the p-type transistor and n-type transistor, and outputs a power consumption reduction signal when the through current is not detected in a predetermined period of time.

    摘要翻译： 一种功率消耗控制装置，用于检测来自振荡器的输出端的脉冲信号的输出作为操作监视对象，并且当在预定时间段内未检测到脉冲信号时输出功耗降低信号，包括p型 晶体管和n型晶体管，其串联连接并具有连接有输出端子的栅极;以及检测装置，用于检测流过p型晶体管和n型晶体管的贯通电流，并输出功率消耗 在预定时间段内没有检测到通过电流时的减小信号。

    Multiplexer circuit having a simplified construction and reduced number of parts
    7.
    发明授权
    Multiplexer circuit having a simplified construction and reduced number of parts 失效
    多路复用器电路具有简化的结构和减少的部件数量

    公开(公告)号：US5189312A

    公开(公告)日：1993-02-23

    申请号：US705557

    申请日：1991-05-24

    申请人： Katsuya Shimizu ,  Tomoaki Ito

    发明人： Katsuya Shimizu ,  Tomoaki Ito

    IPC分类号： H03K17/00 ,  H03K17/62

    CPC分类号： H03K17/62

    摘要： A multiplexer circuit comprises a plurality of voltage generation circuits which produce corresponding output voltages having respective, different voltage levels in accordance with an ordered sequence thereof, from the lowest to the highest level. The outputs of the plurality of voltage generation circuits are supplied to a common output line. A decoder circuit receives a control data input signal which designates a selected one of the plurality of levels of the output signal and produces a signal for disabling each of the voltage generating circuits having an output voltage level of a higher order than that of the voltage generating circuit producing the output voltage of the selected level designated by the control data input signal. Voltage generating circuits of lower order need not be disabled.

    摘要翻译： 多路复用器电路包括多个电压产生电路，其根据其有序序列从最低到最高电平产生具有各自不同电压电平的相应输出电压。 多个电压产生电路的输出被提供给公共输出线。 解码器电路接收控制数据输入信号，该控制数据输入信号指定输出信号的多个电平中的所选择的一个电平，并产生用于禁用具有比产生电压的电压高的输出电压电平的每个电压发生电路的信号 产生由控制数据输入信号指定的选定电平的输出电压。 低阶电压发生电路不需要禁用。

    Differential circuit and peak hold circuit including differential circuit
    9.
    发明授权
    Differential circuit and peak hold circuit including differential circuit 有权
    差分电路和峰值保持电路包括差分电路

    公开(公告)号：US06741105B2

    公开(公告)日：2004-05-25

    申请号：US10418197

    申请日：2003-04-18

    申请人： Katsuyuki Yasukouchi ,  Ayuko Watabe ,  Katsuya Shimizu

    发明人： Katsuyuki Yasukouchi ,  Ayuko Watabe ,  Katsuya Shimizu

    IPC分类号： G11C2702

    CPC分类号： H03K5/2418

    摘要： A peak hold circuit which improves the precision of a hold voltage. The peak hold circuit includes a first input transistor which receives an input voltage and a second input transistor which receives the hold voltage. The peak hold circuit further includes a hold capacitor, a hold-voltage setting transistor and a bypass circuit. The hold capacitor supplies the hold voltage to the second input transistor. The hold-voltage setting transistor receives base current from the collector of the first input transistor and makes the hold voltage coincide with the input voltage in accordance with the base current. The bypass circuit bypasses bias current to be supplied to the second input transistor when the hold-voltage setting transistor is turned off.

    摘要翻译： 一种提高保持电压精度的峰值保持电路。 峰值保持电路包括接收输入电压的第一输入晶体管和接收保持电压的第二输入晶体管。 峰值保持电路还包括保持电容器，保持电压设置晶体管和旁路电路。 保持电容将保持电压提供给第二输入晶体管。 保持电压设定晶体管从第一输入晶体管的集电极接收基极电流，并使保持电压根据基极电流与输入电压一致。 当保持电压设定晶体管截止时，旁路电路绕过要提供给第二输入晶体管的偏置电流。

    Polyhexamethylene adipamide fibers and process for producing the same
    10.
    发明授权
    Polyhexamethylene adipamide fibers and process for producing the same 失效
    聚己二酰己二酰己二胺纤维及其制备方法

    公开(公告)号：US5929148A

    公开(公告)日：1999-07-27

    申请号：US750093

    申请日：1996-11-25

    申请人： Katsuya Shimizu ,  Hiroshi Tomiyama

    发明人： Katsuya Shimizu ,  Hiroshi Tomiyama

    IPC分类号： C08K5/00 ,  C08G69/04 ,  C08G69/48 ,  C08K5/13 ,  C08L77/00 ,  C08L77/06 ,  D01F1/10 ,  D01F6/00 ,  D01F6/60 ,  D01F6/90

    CPC分类号： D01F1/10 ,  C08G69/04 ,  C08G69/48 ,  D01F6/60

    摘要： The present invention provides polyhexamethylene adipamide fibers significantly excellent in thermal yellowing resistance, and a process for producing the same. The improved polyhexamethylene adipamide fibers have adaptability to fibers for clothing which adaptability is comparable to that of poly-.epsilon.-capramide fibers and polyester fibers. The improved polyhexamethylene adipamide fibers can be obtained by either (1) melt spinning a polyhexamethylene adipamide simultaneously containing 2,4-bis(alkylthio)-6-(3,5 -dialkyl-4-hydroxyanilino)-1,3,5-triazine and a compound selected from the group consisting of phosphorous acid, hypophosphorous acid and derivatives of these acids, or (2) melt spinning the fibers having the sum of an amino end group concentration (�--NH.sub.2)!) and a carboxyl end group concentration (�--COOH!) of 70 to 200 meq/kg, satisfying the condition: �--COOH!.ltoreq.60 meq/kg, and containing from 0.005 to 0.5% by weight of an alkali metal compound, or (3) melt spinning under conditions wherein the melt spinning in (1) and that in (2) are combined.

    摘要翻译： PCT No.PCT / JP95 / 00758 Sec。 371日期：1996年11月25日 102（e）日期1996年11月25日PCT提交1995年4月18日PCT公布。 第WO95 / 33088号公报 日期：1995年12月7日本发明提供耐热黄变性优异的聚己二酰己二胺纤维及其制造方法。 改进的聚己二酰己二胺纤维对衣服纤维具有适应性，其适应性与聚ε-己内酰纤维和聚酯纤维的适应性相当。 改进的聚己二酰己二胺纤维可以通过（1）熔融纺丝同时含有2,4-双（烷硫基）-6-（3,5-二烷基-4-羟基苯胺基）-1,3,5-三嗪的聚己二酰己二胺 和选自亚磷酸，次磷酸和这些酸的衍生物的化合物，或（2）将具有氨基端基浓度（[-NH 2）]之和的纤维和羧基端基浓度 （[-COOH]）为70〜200meq / kg，满足条件：[-COOH]≤60meq/ kg，含有0.005〜0.5重量％的碱金属化合物，或（3）熔融 在（1）和（2）中的熔融纺丝组合的条件下纺丝。