LCD with light shielding on same insulator as pixel and extending beyond sealant inner surface
    1.
    发明授权
    LCD with light shielding on same insulator as pixel and extending beyond sealant inner surface 失效
    LCD具有与像素相同的绝缘体上的屏蔽,并延伸超过密封剂内表面

    公开(公告)号:US06798474B2

    公开(公告)日:2004-09-28

    申请号:US09045385

    申请日:1998-03-20

    IPC分类号: G02F11335

    摘要: A liquid crystal display device is provided which includes: a first substrate; a second substrate; and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes a plurality of switching elements, a plurality of picture element electrodes connected to the plurality of the switching elements and a plurality of color filters which are arranged so as to correspond to the plurality of the picture element electrodes on an area of the first substrate corresponding to a display region of the liquid crystal display device, and a light shielding frame layer around a periphery of the display region.

    摘要翻译: 提供了一种液晶显示装置,包括:第一基板; 第二基板; 以及插入在第一基板和第二基板之间的液晶层。 第一基板包括多个开关元件,连接到多个开关元件的多个像素电极和多个滤色器,其被布置为与多个图像元素电极对应于 对应于液晶显示装置的显示区域的第一基板和围绕显示区域的周边的遮光框架层。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20090215247A1

    公开(公告)日:2009-08-27

    申请号:US12434637

    申请日:2009-05-02

    IPC分类号: H01L21/304

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在扫描装置(1)的盖(8)的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 晶片通过照明装置(7a)和(7b)。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    3.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照,防止铝腐蚀

    公开(公告)号:US07998793B2

    公开(公告)日:2011-08-16

    申请号:US12434637

    申请日:2009-05-02

    IPC分类号: H01L21/00

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在切割装置(1)的盖(8)的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 晶片通过照明装置(7a)和(7b)。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    4.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号:US20080138962A1

    公开(公告)日:2008-06-12

    申请号:US11632993

    申请日:2004-07-22

    IPC分类号: H01L21/304

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在切割装置(1)的盖(8)的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 通过照明装置(7a)和(7b)的晶片。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Containment vessel and nuclear power plant

    公开(公告)号:US09818495B2

    公开(公告)日:2017-11-14

    申请号:US13988966

    申请日:2011-09-14

    申请人: Takashi Sato

    发明人: Takashi Sato

    摘要: A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit

    公开(公告)号:US09653994B2

    公开(公告)日:2017-05-16

    申请号:US13215035

    申请日:2011-08-22

    IPC分类号: G01R31/00 H02M3/158 H02M1/36

    CPC分类号: H02M3/158 H02M1/36

    摘要: A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.

    Method for producing fuel cell electrode catalyst, fuel cell electrode catalyst, and uses thereof
    8.
    发明授权
    Method for producing fuel cell electrode catalyst, fuel cell electrode catalyst, and uses thereof 有权
    燃料电池用电极催化剂的制造方法,燃料电池用电极催化剂及其用途

    公开(公告)号:US09350025B2

    公开(公告)日:2016-05-24

    申请号:US13979305

    申请日:2011-08-09

    摘要: A method for producing a fuel cell electrode catalyst including a metal element selected from aluminum, chromium, manganese, iron, cobalt, nickel, copper, strontium, yttrium, tin, tungsten, and cerium and having high catalytic activity through heat treatment at comparatively low temperature. The method including: a step (1) of mixing at least a certain metal compound (1), a nitrogen-containing organic compound (2), and a solvent to obtain a catalyst precursor solution, a step (2) of removing the solvent from the catalyst precursor solution, and a step (3) of heat-treating a solid residue, obtained in the step (2), at a temperature of 500 to 1100° C. to obtain an electrode catalyst; a portion or the entirety of the metal compound (1) being a compound containing, as the metal element, a metal element M1 selected from aluminum, chromium, manganese, iron, cobalt, nickel, copper, strontium, yttrium, tin, tungsten, and cerium.

    摘要翻译: 一种生产包括选自铝,铬,锰,铁,钴,镍,铜,锶,钇,锡,钨和铈的金属元素的燃料电池电极催化剂的方法,并且通过相对较低的热处理具有高催化活性 温度。 该方法包括:将至少一种金属化合物(1),含氮有机化合物(2)和溶剂混合以获得催化剂前体溶液的步骤(1),除去溶剂的步骤(2) 和催化剂前体溶液的步骤(3)和步骤(2)中获得的固体残渣热处理步骤(3),在500〜1100℃的温度下进行,得到电极催化剂; 金属化合物(1)的一部分或全部是含有选自铝,铬,锰,铁,钴,镍,铜,锶,钇,锡,钨中的金属元素M1作为金属元素的化合物, 和铈。

    Method for manufacturing glass blank for magnetic disk, method for manufacturing glass substrate for magnetic disk
    9.
    发明授权
    Method for manufacturing glass blank for magnetic disk, method for manufacturing glass substrate for magnetic disk 有权
    磁盘用玻璃坯料的制造方法,磁盘用玻璃基板的制造方法

    公开(公告)号:US09336810B2

    公开(公告)日:2016-05-10

    申请号:US13982877

    申请日:2012-04-27

    IPC分类号: C03B11/12 G11B5/84 C03B11/08

    摘要: A method for manufacturing a glass substrate for magnetic disk is provided in which a glass is kept from being fused to a mold during press forming and shape processing to achieve a good circularity is efficiently performed. The method includes: a forming process of forming a disk-shaped glass blank by direct-pressing a molten glass by a pair of dies; and a shape processing process of performing at least one of inner hole formation and outer shape formation for forming a disk-shaped glass substrate by forming a cutting line on the principal face of the glass blank, followed by growing the cutting line to perform cutting. In the forming process, press forming is performed while the temperature of the pair of dies, over a period of time until a molten glass is separated from the die after coming into contact with the die, is set at a temperature lower than a glass transition point (Tg) and a mold release material is not attached to the surfaces of the pair of dies.

    摘要翻译: 提供一种用于制造用于磁盘的玻璃基板的方法,其中在压制成形期间保持玻璃不熔化到模具,并且有效地执行形状处理以实现良好的圆形度。 该方法包括:通过一对模具直接压制熔融玻璃来形成盘状玻璃坯料的成形过程; 以及通过在玻璃坯料的主面上形成切割线,进行用于形成圆盘状的玻璃基板的内孔形成和外形形成中的至少一种的形状加工工序,然后使切割线成长进行切削。 在成形过程中,一边进行压制成形,一边在与模具接触的熔融玻璃与模具分离一段时间的一段时间内,将其设定为低于玻璃化转变温度 点(Tg)和脱模材料未附接到该对模具的表面。