摘要:
A variable magnification finder including from front to rear, a first lens unit of negative power, a second lens unit of positive power and a third lens unit of positive power, these three units constituting an objective lens of positive overall power, followed by an eyepiece lens of positive power, wherein a finder image formed by the first and second units near the third lens unit is observed by the eyepiece lens, and, with the other lens units being held stationary, the second lens unit is axially moved to vary the finder magnification.
摘要:
A dry cleaning method for removing metal contaminants from a surface of an oxide film such that no substantial etching of the oxide film occurs, includes the steps of supplying a halide gas containing an element that is selected from the group IIIa elements, group IVa elements and the group Va elements in a form of halide, to the oxide film, thereby dry cleaning the surface of the oxide film.
摘要:
A magnification change-over device for a camera is provided with an incident optical path for the incidence of the light of an object to be photographed; a first optical path for guiding the object light incident on the incident optical path to a first aperture; a second optical path for guiding the object light incident on the incident optical path to a second aperture; changeover means for selection between the first and second optical paths; and optical means for differentiating the magnification of an image formed through the second aperture from that of an image formed through the first aperture.
摘要:
The disclosed variable magnification finder includes, from front to rear, a first lens unit of negative power, a second lens unit of positive power, a third lens unit of positive power, the first, second and third lens units constituting an objective lens of positive power, and an eyepiece of positive power. The first and second lens units form a finder image on a plane just in front of the third lens unit. The second lens unit is moved axially forward to increase the image magnification, while the shift of diopter of the finder is simultaneously compensated for by moving the first lens unit.
摘要:
A variable power finder having an objective lens of positive refracting power comprising a first lens unit of positive refracting power movable along an optical axis and a second lens unit releasably attached to the first lens unit in axial alignment, wherein a real image to be observed is formed by the objective lens.
摘要:
A photographic lens having four components of characteristic forms with the 1st component counting from front being axially moved forward while the 2nd component is moved axially in a given relation to the 1st component as focusing is effected down to shorter object distances.
摘要:
A light receiving apparatus for use in single-lens reflex camera is disclosed. A beam splitter is disposed between the swing-up mirror of the camera and the film plane to divide the light transmitted through the taking lens into a plural number of beams. To receive the divided beams there are provided a plural number of photoreceptors in the respective optical paths of the divided beams.
摘要:
An optical system for forming a view-finder image in combination with an image of exposure condition indicia as applied to a cinematographic camera includes a first image plane at which a focusing screen lies with the exposure condition indicia located at a desired large distance from the finder field of view, and a prism positioned ahead of a second image plane at which both the images are erected, and oriented so that the image of the indicia can be seen immediately adjacent the finder field of view by a photographer looking through an ocular of the system.
摘要:
A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.
摘要:
A method of manufacturing a semiconductor integrated circuit comprises steps of forming at least one semiconductor device on a substrate, depositing an insulator layer on the substrate so as to bury the semiconductor device, providing a contact hole through the insulator layer for exposing a desired part of the semiconductor device, filling the contact hole by a refractory metal for electrical connection, covering the insulator layer by a second insulator layer, forming a groove through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove, forming a material layer acting as nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor of the second refractory metal.