摘要:
A comparator having a hit signal that is high, before a hit check is established in each way of an address array, and that goes low, when a mishit has been established. When a clock frequency is high, the address array is activated by the first clock signal, and thereafter, all ways of a data array are activated by the second clock signal before the hit check is established. When the hit check has been established, data read from a way which has the hit is output onto a data line and an operation in the way which has a mishit is stopped.
摘要:
A comparator is constituted such that a hit signal &phgr;hit is high, before hit check is established in each way of an address array, and such that the hit signal goes low, when a mishit has been established. When a clock frequency is relatively high, the address array is activated by the first clock signal, and thereafter, all ways of a data array are activated by the second clock signal before the hit check in the address array is established. When the hit check has been established, data read from a way in the data array which has hit is immediately outputted onto a data line and an operation in the way which has mishit is stopped. This novel constitution realizes a high-speed cache operation. When the clock frequency is relatively low, only a way in the data array that has hit is activated after completion of the hit check, thereby reducing power consumption at a low-speed operation.
摘要:
A comparator is constituted such that a hit signal .phi.hit is high, before hit check is established in each way of an address array, and such that the hit signal goes low, when a mishit has been established. When a clock frequency is relatively high, the address array is activated by the first clock signal, and thereafter, all ways of a data array are activated by the second clock signal before the hit check in the address array is established. When the hit check has been established, data read from a way in the data array which has hit is immediately outputted onto a data line and an operation in the way which has mishit is stopped. This novel constitution realizes a high-speed cache operation. When the clock frequency is relatively low, only a way in the data array that has hit is activated after completion of the hit check, thereby reducing power consumption at a low-speed operation.
摘要:
A comparator is constituted such that a hit signal .phi.hit is high, before hit check is established in each way of an address array, and such that the hit signal goes low, when a mishit has been established. When a clock frequency is relatively high, the address array is activated by the first clock signal, and thereafter, all ways of a data array are activated by the second clock signal before the hit check in the address array is established. When the hit check has been established, data read from a way in the data array which has hit is immediately outputted onto a data line and an operation in the way which has mishit is stopped. This novel constitution realizes a high-speed cache operation. When the clock frequency is relatively low, only a way in the data array that has hit is activated after completion of the hit check, thereby reducing power consumption at a low-speed operation.
摘要:
An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.
摘要:
An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits, such as a microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.
摘要:
An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.
摘要:
This invention provides a technique for enhancing an operating frequency and improving reliability in a system using at least level sense type sequence circuits as a plurality of sequence circuits. A microcomputer includes a clock generator configured as a clock supply source, functional modules operated in sync with a clock signal, level sense type sequence circuits which are contained in the functional modules and configured as clock supply destinations, a clock supply system which propagates the clock signal to the level sense type sequence circuits, etc. The clock supply system includes a clock wiring which propagates the clock signal outputted from the clock generator to ends thereof via a plurality of branches. At least pulse generators are disposed in the midstream of the clock wiring. Each of the pulse generators varies timing provided to change the falling edge of the clock signal, which defines an endpoint of an input operating period of each level sense type sequence circuit.
摘要:
This invention provides a technique for enhancing an operating frequency and improving reliability in a system using at least level sense type sequence circuits as a plurality of sequence circuits. A microcomputer includes a clock generator configured as a clock supply source, functional modules operated in sync with a clock signal, level sense type sequence circuits which are contained in the functional modules and configured as clock supply destinations, a clock supply system which propagates the clock signal to the level sense type sequence circuits, etc. The clock supply system includes a clock wiring which propagates the clock signal outputted from the clock generator to ends thereof via a plurality of branches. At least pulse generators are disposed in the midstream of the clock wiring. Each of the pulse generators varies timing provided to change the falling edge of the clock signal, which defines an endpoint of an input operating period of each level sense type sequence circuit.
摘要:
The invention provides a semiconductor integrated circuit device provided with an SRAM that satisfies the requirements for both the SNM and the write margin with a low supply voltage. The semiconductor integrated circuit device include: multiple static memory cells provided in correspondence with multiple word lines and multiple complimentary bit lines; multiple memory cell power supply lines that each supply an operational voltage to each of the multiple memory cells connected to the multiple complimentary bit lines each; multiple power supply circuits comprised of resistive units that each supply a power supply voltage to the memory cell power supply lines each; and a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines, wherein the memory cell power supply lines are made to have coupling capacitances to thereby transmit a write signal on corresponding complimentary bit lines.