摘要:
An analog value storing apparatus comprises a semiconductor field-effect device, including a substrate, a source and drain formed to define a channel region, a floating gate embedded in an insulating layer on the channel region, a control gate connected to the ground on the insulating layer above the floating gate, a write voltage source coupled to the source to supply a write voltage to charge the floating gate, a resistor having a relatively high resistance value inserted between the write voltage source and the source, and an analog value voltage source connected to the drain. As a result, the floating gate begins to be charged with the write voltage and the analog voltage and stops being charged with the voltage at the source determined as voltage division of the write voltage and the analog voltage by the high resistance value of the resistor and the internal resistance value of the device. Preferably, an array of a plurality of such devices is used and an analog signal is stored in the form of a series of sampled analog values sampled from the analog signal at the timing of addressing while such devices are addressed sequentially. The stored analog values are read out while the devices are addressed, whereby and original analog signal is reproduced.
摘要:
A solid-state image sensing device has a photoreceptive element for storing an information charge generated in response to an incident light and a charge-retaining element for retaining the information charge as it is, adjacently arranged on the surface of a semiconductor substrate, wherein the photoreceptive element and the charge-retaining element can bidirectionally transfer the information charge according to a transfer clock signal.
摘要:
There is disclosed a stabilized oxymethylene copolymer composition comprising a blend of an oxymethylene copolymer and an alkaline earth metal salt of an ester of a tribasic inorganic acid of an organic carboxylic acid monoester of an alcohol having two or more hydroxyl groups, as the stabilizer.
摘要:
The invention is related to a container for holding liquids such as a 200 liter removable head steel drum. The drum is provided with an inner bag which lines the inside periphery of the drum and thereby prevents the sealing or coating liquid contained or being dumped into the drum from contacting the inside periphery of the drum. The inner bag is disposable. Thus the drum can be recycled or regenerated for reuse at a reasonable cost. Further, the inner bag prevents the liquid from being contaminated by the foreign matter located on the drum inner surface. The inner bag is removably fitted to the inside of the drum by a fixing means. The fixing means is removably fitted to at least one annular recess normally present on the inside periphery of the drum with or without the presence of the inner bag disposed between the recess and the fixing means. The fixing means fixes the inner bag and prevents it from slipping out while the liquid filled drum is being shipped or carried about or while the liquid inside the drum is being stirred or dumped from the drum. For the regeneration of the drum, the used inner bag is simply removed and replaced with a new one.
摘要:
A display method for displaying performed by a display device having, in a display screen, a first display area (1) which requires power for displaying information, and a second display area (2), having a smaller dimension than the first display area, which requires power for displaying information, and including a housing (3) framing the display screen, the housing having a surface on a same side of the display screen, on which surface any operating section for touch operation is not provided, the method including displaying constantly information in the second display area (2) regardless of whether the first display area (1) is in the on-state or the off-state.
摘要:
Chip area is reduced using a CCD solid state image pick-up device of a frame transfer system. Permanent accumulation pixels for accumulating information charges in a first imaging operation to photograph a coarse image and a second imaging operation to photograph a fine image, and selective accumulation pixels for accumulating information charges in only the second imaging operation are arranged in an image pick-up section 11i of a solid state image pick-up device 11. The permanent accumulation pixels are disposed every, for example, three rows of the selective accumulation pixels. The number of rows of a storage section 11s is arranged to correspond with the number of rows of the permanent accumulation pixels of the image pick-up section 11i. The permanent accumulation pixel and the selective accumulation pixel have the same construction on a substrate and are distinguished by frame transfer clocks .phi.a and .phi.b to be supplied.
摘要:
This invention relates to a static random access memory having the so-called divided word-line structure, uses the power supply line also as the common word line so as to enable operation at high speed without causing complication in structure of the wiring layer, resulting in that the manufacturing yield can be improved and a manufacturing coat lowers.
摘要:
A polyacetal copolymer composed of an acetal polymer portion and a thermoplastic elastomer portion having soft segments and hard segments, the second-order transition temperature of said elastomer portion being in the range of -120.degree. to 40.degree. C. A process for producing such a polyacetal copolymer is also described.
摘要:
A solid-state image sensing device has a photoreceptive element for storing an information charge generated in response to an incident light and a charge-retaining element for retaining the information charge as it is, adjacently arranged on the surface of a semiconductor substrate, wherein the photoreceptive element and the charge-retaining element can bidirectionally transfer the information charge according to a transfer clock signal.
摘要:
A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.