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    Continuously film-forming apparatus provided with improved gas gate means
    1.
    发明授权
    Continuously film-forming apparatus provided with improved gas gate means 失效
    连续成膜装置具有改进的气门装置

    公开(公告)号：US5919310A

    公开(公告)日：1999-07-06

    申请号：US610076

    申请日：1996-02-29

    申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

    发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

    IPC分类号： C23C16/54 ,  C23C16/00

    CPC分类号： C23C16/545

    摘要： A continuous film-forming apparatus includes a plurality of reaction chambers each capable of forming a semiconductor film with a different chemical composition. The reaction chambers are arranged such that a substrate web on which a film is to be formed can be hermetically moved through each of the reaction chambers under a vacuum condition. A gas gate is disposed at a central position between each pair of adjacent reaction chambers, with each gas gate provided with a slit for communication between the adjacent reaction chambers. The slit is provided with a clearance which allows the substrate web to move therethrough, is structured such that gate gas can be introduced therein from above and beneath the substrate which is moved through the clearance, and is dimensioned such that opposite sides proximate to the position where the gate gas is introduced have different heights in accordance with the inner pressure upon film formation of each of the adjacent reaction chambers in communication with each other by the slit.

    摘要翻译： 连续成膜装置包括能够形成化学成分不同的半导体膜的多个反应室。 反应室被布置成使得在其上形成膜的基材网可以在真空条件下气密地移动通过每个反应室。 气门设置在每对相邻反应室之间的中心位置处，每个气门设置有用于在相邻反应室之间连通的狭缝。 狭缝设置有允许衬底腹板通过其移动的间隙，其结构使得可以从移动通过间隙的衬底的上方和下方将栅极气体引入其中，并且其尺寸使得接近位置的相对侧 其中引入的栅极气体根据通过狭缝彼此连通的每个相邻反应室的成膜时的内部压力具有不同的高度。

    Continuous forming method for functional deposited films and deposition apparatus
    2.
    发明授权
    Continuous forming method for functional deposited films and deposition apparatus 失效
    功能沉积膜和沉积设备的连续成型方法

    公开(公告)号：US5968274A

    公开(公告)日：1999-10-19

    申请号：US754066

    申请日：1996-11-20

    申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

    发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

    IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20

    CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.

    摘要翻译： 本发明的目的在于提供具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间任何相互混合的气体，其中期望的导电类型的半导体层沉积在带状衬底上 多个成膜室，通过等离子体CVD，同时带状基板沿其长度方向连续移动通过多个通过气门连接的成膜室，其具有用于将清除气体引入狭缝状分离通道 其特征在于，连接形成半导体结的i型层成膜室和i型层成膜室的n型或p型层成膜室中的至少一个气门具有比i型层成膜室高的压力 所述清除气体导入位置设置在形成有n型或p型层的膜上 r侧从气门的分离室的中心离开。

    Continuous forming method for functional deposited films
    3.
    发明授权
    Continuous forming method for functional deposited films 失效
    功能沉积膜的连续成型方法

    公开(公告)号：US5946587A

    公开(公告)日：1999-08-31

    申请号：US741352

    申请日：1996-10-29

    申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

    发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

    IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20 ,  C23C16/00

    CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.

    摘要翻译： 本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状 通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到 狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型 层成膜室具有设置在n型或p型层上的清除气体导入位置 成膜室一侧离开气门分离室的中心。

    Apparatus for forming a deposited film
    4.
    发明授权
    Apparatus for forming a deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5575855A

    公开(公告)日：1996-11-19

    申请号：US433052

    申请日：1995-05-03

    申请人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

    发明人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

    IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

    CPC分类号： C23C16/455 ,  C23C16/511 ,  C23C16/545 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

    摘要翻译： 沉积膜形成方法包括以下步骤：将长衬底连续地携带到真空室中或从真空室流出，使第一沉积膜形成气体沿平行于衬底的相反方向流动并与第一气体与衬底的输送方向相反 排出装置进入真空室，从第一气体排出装置排出气体，使平行于基板的向前方向流动第二沉积成膜气体并等效于基板的输送方向，排出气体通过第二排气装置 并且向第一和第二气体施加放电能量。

    Method for continuously manufacturing a semiconductor device
    6.
    发明授权
    Method for continuously manufacturing a semiconductor device 失效
    连续制造半导体器件的方法

    公开(公告)号：US5382531A

    公开(公告)日：1995-01-17

    申请号：US97046

    申请日：1993-07-27

    申请人： Yasushi Fujioka ,  Takashi Kurokawa ,  Masahiro Kanai ,  Masafumi Sano ,  Takehito Yoshino ,  Yuzo Kohda

    发明人： Yasushi Fujioka ,  Takashi Kurokawa ,  Masahiro Kanai ,  Masafumi Sano ,  Takehito Yoshino ,  Yuzo Kohda

    IPC分类号： H01L21/205 ,  C23C16/507 ,  C23C16/54 ,  H01L31/04 ,  H01L31/18 ,  C23C16/50

    CPC分类号： C23C16/507 ,  C23C16/545 ,  Y10S438/907

    摘要： An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. An enough long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semiconductor layer of a conductivity type which is needed in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

    摘要翻译： 设备连续制造半导体器件。 多个辉光放电区域由气门连接。 沿着基板顺序地穿透辉光放电区域的路径布置具有期望宽度的足够长的带状基板。 带状基板沿纵向方向连续输送，同时沉积在每个辉光放电区域中所需的导电类型的半导体层，从而连续制造具有半导体结的器件。 多个可旋转辊布置在气门的狭缝形分隔通道中，以便在旋转辊的同时支撑带状基底的后表面。