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公开(公告)号：US5706602A
公开(公告)日：1998-01-13
申请号：US662084
申请日：1996-06-12
CPC分类号： A01C1/06
摘要： A method for making a gel coat of gel-coated seed easily disintegrable, in which the gel-coated seed has an aqueous gel layer water-insolubilized with a metal ion, wherein the method comprises blocking the insolubilizing action of the metal ion with a sequestering agent.
摘要翻译： 一种使凝胶涂覆的种子的凝胶涂层容易分解的方法，其中所述凝胶涂覆的种子具有水不溶于金属离子的水性凝胶层，其中所述方法包括用隔离层阻断金属离子的不溶化作用 代理商
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公开(公告)号：US5910281A
公开(公告)日：1999-06-08
申请号：US662083
申请日：1996-06-12
摘要： A method for restoring a dried aqueous organic gel capsule which includes aqueous organic gel hardened with a metal ion and then has been solidified by drying, wherein the method comprises immersing the solidified capsule in an aqueous solution containing the metal ion.
摘要翻译： 一种恢复干燥的水性有机凝胶胶囊的方法，其包括用金属离子硬化的水性有机凝胶，然后通过干燥固化，其中所述方法包括将固化的胶囊浸入含有金属离子的水溶液中。
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公开(公告)号：US5701700A
公开(公告)日：1997-12-30
申请号：US679263
申请日：1996-07-12
CPC分类号： A01C1/06
摘要： A method for storing gel-coated seeds having a gel coat comprising an aqueous gel having been water-insolubilized by a metal ion, which comprises storing the gel-coated seeds in an aqueous solution containing the metal ion.
摘要翻译： 一种用于储存凝胶涂覆的种子的方法，所述凝胶涂层包含水溶性凝胶，所述凝胶涂层已被金属离子水不溶化，其包括将所述凝胶涂覆的种子储存在含有金属离子的水溶液中。
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公开(公告)号：US5791084A
公开(公告)日：1998-08-11
申请号：US933748
申请日：1997-09-23
CPC分类号： A01C1/06
摘要： A method for making a gel coat of gel-coated seed easily disintegrable, in which the gel-coated seed has an aqueous gel layer water-insolubilized with a metal ion, wherein the method comprises blocking the insolubilizing action of the metal ion with a sequestering agent.
摘要翻译： 一种使凝胶涂覆的种子的凝胶涂层容易分解的方法，其中所述凝胶涂覆的种子具有水不溶于金属离子的水性凝胶层，其中所述方法包括用隔离层阻断金属离子的不溶化作用 代理商
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5.发明申请SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权基板加工装置，基板的加工方法及制造半导体装置的方法公开(公告)号：US20130157474A1
公开(公告)日：2013-06-20
申请号：US13813493
申请日：2011-08-02
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , H01L21/02238 , H01L21/02255 , H01L21/3105 , H01L21/67017
摘要： An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.
摘要翻译： 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。
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6.发明授权Substrate processing apparatus, method of processing substrate and method of manufacturing semiconductor device 有权基板处理装置，基板的处理方法及半导体装置的制造方法公开(公告)号：US08901013B2
公开(公告)日：2014-12-02
申请号：US13813493
申请日：2011-08-02
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/67
CPC分类号： H01L21/02104 , H01L21/02238 , H01L21/02255 , H01L21/3105 , H01L21/67017
摘要： An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.
摘要翻译： 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。
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公开(公告)号：US07972979B2
公开(公告)日：2011-07-05
申请号：US12857942
申请日：2010-08-17
申请人： Toru Harada , Masayoshi Minami
发明人： Toru Harada , Masayoshi Minami
IPC分类号： H01L21/469
CPC分类号： F27B17/0025 , H01L21/02164 , H01L21/02222 , H01L21/02323 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/316 , H01L21/67109
摘要： Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.
摘要翻译： 提供了一种基板处理方法，其包括：将其上施加有聚硅氮烷的基板加载到基板处理室中; 在400℃的温度下在水蒸汽气氛和减压气氛中保持衬底处理室的内部，衬底处理室内装载衬底处理室。 在基板处理室的内部保持在水蒸气气氛和400℃的减压气氛的状态下对基板进行第一热处理工序; 接下来，在第一热处理过程中将衬底处理室的内部温度从400℃升高到900℃至1000℃的温度; 在基板处理室的内部保持在水蒸汽气氛和在900℃〜1000℃的温度下的减压气氛的状态下对基板进行第二热处理工序。
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