MAGNETIC RECORDING MEDIA AND MAGNETIC RECORDING SYSTEM
    2.
    发明申请
    MAGNETIC RECORDING MEDIA AND MAGNETIC RECORDING SYSTEM 有权
    磁记录介质和磁记录系统

    公开(公告)号:US20120008228A1

    公开(公告)日:2012-01-12

    申请号:US13178544

    申请日:2011-07-08

    CPC classification number: G11B5/82 G11B5/725

    Abstract: This invention provides a magnetic recording medium excellent in terms of corrosion resistance. The magnetic recording medium comprises a magnetic recording layer, a protective layer and a lubricant layer provided on a nonmagnetic substrate, and the lubricant layer comprises a compound having a heterocyclic ring.

    Abstract translation: 本发明提供了耐腐蚀性优异的磁记录介质。 磁记录介质包括设置在非磁性基底上的磁记录层,保护层和润滑层,润滑层包含具有杂环的化合物。

    Polishing Slurry for Cmp
    3.
    发明申请
    Polishing Slurry for Cmp 审中-公开
    抛光浆料为Cmp

    公开(公告)号:US20080105651A1

    公开(公告)日:2008-05-08

    申请号:US11572321

    申请日:2005-08-09

    CPC classification number: H01L21/3212 C09G1/02

    Abstract: A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.

    Abstract translation: 用于CMP的抛光液具有负载有例如无机盐,保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物,以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液,可以同时实现提高CMP生产率的速度增加,以及用于小型化和布线的多层形成的布线平面化。

    Perpendicular magnetic record medium and magnetic storage system
    4.
    发明申请
    Perpendicular magnetic record medium and magnetic storage system 审中-公开
    垂直磁记录介质和磁存储系统

    公开(公告)号:US20070153419A1

    公开(公告)日:2007-07-05

    申请号:US11645252

    申请日:2006-12-21

    CPC classification number: G11B5/4555 G11B5/7379

    Abstract: Embodiments in accordance with the invention realize a perpendicular magnetic record medium with a high media S/N and excellent corrosion resistance. In a perpendicular magnetic record medium in accordance with an embodiment of the present invention prepared by forming an adhesion layer, an underlayer, a seed layer, an intermediate layer, and a recording layer sequentially on a substrate, the seed layer is specified to have a laminated structure consisting of a first seed layer and a second seed layer. The first seed layer consists of an amorphous alloy containing Cr and the second seed layer consists of an amorphous alloy predominantly composed of Ni with an fcc structure.

    Abstract translation: 根据本发明的实施例实现了具有高介质S / N和优异耐腐蚀性的垂直磁记录介质。 在根据本发明的实施例的垂直磁记录介质中,通过在基板上依次形成粘合层,底层,种子层,中间层和记录层而制备,种子层被规定为具有 层叠结构由第一种子层和第二种子层构成。 第一晶种层由含有Cr的非晶合金构成,第二晶种层由主要由具有fcc结构的Ni构成的非晶合金构成。

    Abrasive-free polishing slurry and CMP process
    5.
    发明申请
    Abrasive-free polishing slurry and CMP process 审中-公开
    无磨料抛光浆和CMP工艺

    公开(公告)号:US20070147551A1

    公开(公告)日:2007-06-28

    申请号:US11643691

    申请日:2006-12-22

    CPC classification number: C09G1/04

    Abstract: A CMP slurry is mixed with an oxidant in polishing and contains a copper rust inhibitor, a water-soluble polymer, a pH controller capable of forming a complex with copper, and water, and is substantially free from abrasive. The CMP slurry effectively reduces dishing in chemical polishing of copper and forms reliable wiring. Preferably, the contents of the rust inhibitor, the water-soluble polymer, and the oxidant are 0.1 to 5 wt %, 0.05 to 5 wt %, and 0.01 to 5M relative to 1 liter of the CMP slurry, respectively, and the amount of the pH controller is a necessary amount for adjusting pH of the CMP slurry to 1.5 to 2.5.

    Abstract translation: 将CMP浆料与抛光中的氧化剂混合,并含有铜锈病抑制剂,水溶性聚合物,能够与铜形成络合物的pH控制剂和水,并且基本上不含研磨剂。 CMP浆料有效减少了铜化学抛光中的凹陷,形成了可靠的布线。 防锈剂,水溶性聚合物和氧化剂的含量优选分别相对于1升CMP浆料为0.1〜5重量%,0.05〜5重量%,0.01〜5微米, pH控制器是将CMP浆料的pH调节至1.5至2.5的必需量。

    Probe Microscope
    8.
    发明申请
    Probe Microscope 审中-公开
    探头显微镜

    公开(公告)号:US20100306886A1

    公开(公告)日:2010-12-02

    申请号:US12789796

    申请日:2010-05-28

    CPC classification number: G01Q60/44 G01Q60/02

    Abstract: An object of the present invention is to provide a probe microscope that permits qualitative and quantitative evaluation on ions existing near the surface of a sample and permits to detect further simply and easily such as impurities, flaws and corrosion origins existing on the sample in high sensitivity. A probe microscope according to the present invention is provided with a test cell that holds a sample and permits to receive liquid, a probe, a counter electrode, a reference electrode, a drive mechanism that causes the probe to follow the surface of the sample as well as to scan the same, a potential control portion that controls a potential between the probe and the reference electrode and a current measuring portion that measures a current flowing between the probe and the counter electrode, and is characterized in that the material of the probe is constituted by a conductive body containing any of gold or gold alloy, carbon or carbon compound, boron, zinc, lead, tin and mercury.

    Abstract translation: 本发明的目的是提供一种探针显微镜,其允许对存在于样品表面附近的离子进行定性和定量评估,并且允许以高灵敏度进一步简单且容易地检测样品中存在的杂质,缺陷和腐蚀起源。 。 根据本发明的探针显微镜设置有容纳样品并允许接收液体,探针,对电极,参比电极,使探针跟随样品表面的驱动机构的测试电池, 以及扫描相同的电位控制部分,其控制探针和参考电极之间的电势;以及电流测量部分,其测量在探针和对电极之间流动的电流,其特征在于探针的材料 由含有金或金合金,碳或碳化合物,硼,锌,铅,锡和汞的导电体构成。

    Pickling plant and method of controlling the same
    9.
    发明授权
    Pickling plant and method of controlling the same 失效
    酸洗厂及其控制方法

    公开(公告)号:US6096137A

    公开(公告)日:2000-08-01

    申请号:US33243

    申请日:1998-03-03

    CPC classification number: C23G3/02 C23G1/02

    Abstract: A pickling plant for a steel strip and a method for controlling the pickling plant, including monitoring at least one quantity of state represented by thickness, width and quantity of scale of the steel strip, and at least one quantity of state of operation of a plant represented by concentration, quantity and temperature of acid supplied into a pickling tank of the pickling plant, line speed of the steel strip, and temperature of the steel strip immediately before entering the pickling tank calculating on the basis of values of said quantity of state and quantity of state of operation, at least one of concentration distribution of acid, concentration distribution of iron and descaling rate at optional plural positions, and on the basis of the calculating the optimum quantity of state for operation of the plant is determined.

    Abstract translation: 用于钢带的酸洗设备和控制酸洗设备的方法,包括监测由钢带的厚度,宽度和数量表示的至少一种状态,以及至少一个工厂的运行状态 以酸洗设备的酸洗槽供给的酸的浓度,数量和温度,钢带的线速度,以及刚刚进入酸洗槽之前的钢带的温度根据所述状态数量和 确定操作状态的数量,确定酸的浓度分布,铁的浓度分布和任选的多个位置的除垢率中的至少一种,以及计算植物的最佳操作状态量的基础。

    Metal polishing slurry and method of polishing a film to be polished
    10.
    发明授权
    Metal polishing slurry and method of polishing a film to be polished 有权
    金属抛光浆料及抛光方法

    公开(公告)号:US08791019B2

    公开(公告)日:2014-07-29

    申请号:US12159419

    申请日:2006-12-27

    CPC classification number: C11D11/0047 C09G1/02 C09K3/1463 H01L21/3212

    Abstract: The present invention provides a metal polishing liquid capable of CMP at a high Cu polishing rate and solving the problems: (a) generation of scratches attributable to solid particles, (b) generation of deteriorations in flatness such as dishing and erosion, (c) complexity in a washing process for removing abrasive particles remaining on the surface of a substrate after polishing, and (d) higher costs attributable to the cost of a solid abrasive itself and to waste liquid treatment, as well as a method of polishing a film to be polished by using the same. Disclosed are a metal polishing liquid which comprises a metal oxidizer, a metal oxide solubilizer, a metal anticorrosive, and a water-soluble polymer having an anionic functional group with a weight-average molecular weight of 8,000 or more and has pH 1 or more to 3 or less, and a method of polishing a film to be polished, which comprises supplying the above metal polishing liquid onto a polishing cloth of a polishing platen and simultaneously relatively moving the polishing platen and a substrate having a metallic film to be polished while the substrate is pressed against the polishing cloth.

    Abstract translation: 本发明提供一种能够以高Cu抛光速率进行CMP处理的金属抛光液,并且解决了以下问题:(a)产生由固体颗粒引起的划痕,(b)产生诸如凹陷和腐蚀的平坦度的劣化,(c​​) 用于去除抛光后残留在基材表面上的磨料颗粒的洗涤过程中的复杂性,以及(d)由于固体磨料本身的成本和废液处理造成的更高成本,以及抛光膜的方法 通过使用它来抛光。 公开了一种金属抛光液,其包含金属氧化剂,金属氧化物增溶剂,金属防腐蚀剂和具有重均分子量为8000以上的阴离子官能团的水溶性聚合物,其pH为1以上至 3以下,以及抛光被研磨膜的方法,该方法包括将上述金属抛光液供给到研磨台板的研磨布上,同时相对移动研磨台板和具有待研磨金属膜的基板,同时 基板被压在抛光布上。

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