利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.018 秒)

    Method of producing a single crystal of a rare-earth silicate
    1.
    发明授权
    Method of producing a single crystal of a rare-earth silicate 失效
    制备稀土硅酸盐单晶的方法

    公开(公告)号：US5667583A

    公开(公告)日：1997-09-16

    申请号：US413287

    申请日：1995-03-30

    申请人： Yasushi Kurata ,  Kazuhisa Kurashige ,  Hiroyuki Ishibashi

    发明人： Yasushi Kurata ,  Kazuhisa Kurashige ,  Hiroyuki Ishibashi

    IPC分类号： C30B15/00 ,  C30B33/00 ,  C30B15/36

    CPC分类号： C30B15/00 ,  C30B29/34 ,  C30B33/00 ,  Y10S117/902 ,  Y10T117/1044

    摘要： A method of growing a single crystal of a rare-earth silicate is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the pulling is conducted along an axis of pulling having a gradient of at least 30.degree. from the b-axis ([010] axis) of the single crystal and a gradient of at least 25.degree. from the c-axis ([001] axis) of the single crystal. The invention also provides a method of machining a single crystal of a rare-earth silicate into a cylindrical form, comprising grinding a cylinder whose axis is directed so as to have a gradient of 0.degree. to 65.degree. from the c-axis ([001] axis) of the single crystal. Further, the invention provides a single crystal of a rare-earth silicate machined into a configuration having at least one plane, wherein the plane most close to the (100) plane of the single crystal has a gradient of at least 5.degree. from the (100) plane.

    摘要翻译： 公开了一种生长稀土硅酸盐的单晶的方法，其包括在坩埚中加热原料，从而获得原料的熔体，使晶种的下端与熔体接触并将晶种拉到 从而生长单晶，并且其中沿着具有从单晶的b轴（[010]轴）至少30°的梯度的拉伸轴进行拉伸，并且从该晶体的至少25°的梯度 c轴（[001]轴）。 本发明还提供了将稀土硅酸盐的单晶加工成圆筒状的方法，其特征在于，将从所述c轴取向为0°〜65°的圆柱体（[001] ]轴）。 此外，本发明提供了一种加工成具有至少一个平面的构造的稀土硅酸盐的单晶，其中最接近单晶的（100）面的平面具有至少比（ 100）飞机。

    Method of growing a rare earth silicate single crystal
    2.
    发明授权
    Method of growing a rare earth silicate single crystal 失效
    生长稀土硅酸盐单晶的方法

    公开(公告)号：US5728213A

    公开(公告)日：1998-03-17

    申请号：US842483

    申请日：1997-04-24

    申请人： Yasushi Kurata ,  Hiroyuki Ishibashi ,  Kazuhisa Kurashige

    发明人： Yasushi Kurata ,  Hiroyuki Ishibashi ,  Kazuhisa Kurashige

    IPC分类号： C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B25/04

    CPC分类号： C30B13/00 ,  C30B11/00 ,  C30B15/00 ,  C30B29/34

    摘要： A method of growing a rare earth silicate single crystal from a melt of a starting material containing a rare earth oxide and a silicon oxide, wherein the starting material in which a density of Fe as an impurity is not more 0.1 ppm, a density of Al as an impurity is not more than 0.4 ppm, or the starting material showing a weight loss of not more than 1.0% when heated up to 1,000.degree. C. is used. This method which makes it possible to stably obtain a rare earth silicate single crystal having a good scintillator performance, such as free of voids and/or non-colored crystals, or may cause no poor fluorescent characteristics due to a compositional deviation of materials.

    摘要翻译： 从含有稀土氧化物和氧化硅的原料的熔体中生长稀土硅酸盐单晶的方法，其中作为杂质的Fe的密度不大于0.1ppm的原料，Al的密度 作为杂质不大于0.4ppm，或者当加热至1000℃时显示重量损失不大于1.0％的起始材料。 这种可以稳定地获得具有良好的闪烁体性能的稀土硅酸盐单晶，例如没有空隙和/或无色结晶的方法，或者由于材料的组成偏差而不会导致不良的荧光特性。

    Method of growing single crystal
    3.
    发明授权
    Method of growing single crystal 失效
    生长单晶的方法

    公开(公告)号：US5690731A

    公开(公告)日：1997-11-25

    申请号：US413288

    申请日：1995-03-30

    申请人： Yasushi Kurata ,  Kazuhisa Kurashige ,  Hiroyuki Ishibashi

    发明人： Yasushi Kurata ,  Kazuhisa Kurashige ,  Hiroyuki Ishibashi

    IPC分类号： C30B15/30 ,  C30B15/20

    CPC分类号： C30B15/30

    摘要： A method of growing a crack-free single crystal is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the melt of the crucible flows from its surface toward its inner part inside the crucible by convection at a position locating outside a region where the growth of the single crystal occurs. This flow control can be achieved by, for example, surrounding the crucible with a heat insulation refractory composed of a pair of semicylindrical refractories disposed so as to provide a circular cross section with differently sized gaps. In the above-mentioned method, the seed crystal may be rotated during a shoulder growth in which the single crystal has its diameter increased from that of the seed crystal to a target diameter at a rotation rate greater than that during a subsequent cylindrical body growth. Further, in the above-mentioned method, during the shoulder growth, the single crystal may have a solid-liquid interface configuration changed from a convex toward the melt to a flatness or a convex toward the seed crystal.

    摘要翻译： 公开了生长无裂纹单晶的方法，其包括在坩埚中加热原料，从而获得原料熔体，使晶种的下端与熔体接触并拉出晶种从而生长 单晶，并且其中坩埚的熔体在位于坩埚内部的内部的位置在位于发生单晶生长的区域外的位置处通过对流流动。 这种流量控制可以通过例如用由一对半圆柱形耐火材料构成的隔热耐火材料包围坩埚来实现，该耐热材料被设置成提供具有不同尺寸间隙的圆形横截面。 在上述方法中，晶种可以在单晶的直径从晶种的直径增加到目标直径的肩部生长期间以比随后的圆柱体生长期间的转速更大的旋转速度旋转。 此外，在上述方法中，在肩部生长期间，单晶可以具有从凸状朝向熔融状态变化为平坦度或朝向晶种的凸状的固液界面结构。

    Single crystal heat treatment method
    4.
    发明申请
    Single crystal heat treatment method 有权
    单晶热处理方法

    公开(公告)号：US20060266277A1

    公开(公告)日：2006-11-30

    申请号：US11374436

    申请日：2006-03-14

    申请人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

    发明人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B30/04 ,  C30B28/10

    CPC分类号： C30B31/08 ,  C30B29/34

    摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1

    摘要翻译： 一种单晶热处理方法，其特征在于，在不饱和的氧气氛中，在温度T 1℃（单位：℃）下加热特定的铈掺杂的硅酸盐化合物的单晶， 由式（3）表示的条件<？in-line-formula description =“In-line Formulas”end =“lead”？> 800 <= T <1 <（T < （3）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中T m1（单位：°C））表示 单晶的熔点）。

    Single crystal heat treatment method
    7.
    发明授权
    Single crystal heat treatment method 有权

    公开(公告)号：US07531036B2

    公开(公告)日：2009-05-12

    申请号：US11374435

    申请日：2006-03-14

    申请人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    发明人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    IPC分类号： C30B15/14 ,  C30B21/06

    CPC分类号： C30B29/34 ,  C30B31/08 ,  Y10S117/906

    摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

    Single crystal heat treatment method
    9.
    发明申请
    Single crystal heat treatment method 有权

    公开(公告)号：US20060266276A1

    公开(公告)日：2006-11-30

    申请号：US11374435

    申请日：2006-03-14

    申请人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    发明人： Naoaki Shimura ,  Yasushi Kurata ,  Tatsuya Usui ,  Kazuhisa Kurashige

    IPC分类号： C30B15/00 ,  C30B27/02 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/34 ,  C30B31/08 ,  Y10S117/906

    摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2-(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).