公开(公告)号：US20090325083A1

公开(公告)日：2009-12-31

申请号：US12491578

申请日：2009-06-25

申请人： Yasushi OKUBO ,  Hisashi Kasahara

发明人： Yasushi OKUBO ,  Hisashi Kasahara

IPC分类号： G03F1/00

CPC分类号： G03F1/42

摘要： A photomask manufacturing method includes a defect information storage step of storing defect information of a mask blank, provided with an identification marker on an end face thereof, into an information storage device in correspondence to the identification marker, a placing orientation determination step of determining a placing orientation of the mask blank with respect to an exposure/writing apparatus, and an orientation correction step of performing rotation control of a rotating apparatus so that an orientation of the mask blank coincides with the determined placing orientation.

摘要翻译： 光掩模制造方法包括：缺陷信息存储步骤，将与其相应的信息存储装置，将其端面上设置有识别标记的掩模毛坯的缺陷信息存储在存储装置中;放置取向确定步骤， 相对于曝光/书写装置放置掩模坯料的取向;以及方向校正步骤，对旋转装置进行旋转控制，使得掩模毛坯的取向与所确定的放置取向一致。

公开(公告)号：US20100081069A1

公开(公告)日：2010-04-01

申请号：US12632900

申请日：2009-12-08

申请人： Yasushi OKUBO

发明人： Yasushi OKUBO

IPC分类号： G03F7/20 ,  G03F1/00

CPC分类号： G03F1/38 ,  G03F1/60

摘要： An object of this invention is to properly identify or manage mask blank substrates, mask blanks, and so on. A manufacturing method of a mask blank substrate (10) includes a substrate preparing step of preparing a plate-like substrate with a square main surface (102), and a marker forming step of forming a marker (106a to 106d) for identifying or managing the substrate on each of at least a plurality of end faces among four end faces (104a to 104d) of the substrate. The four end faces are continuous with sides of the main surface, respectively.

摘要翻译： 本发明的一个目的是适当地识别或管理掩模空白基板，掩模毛坯等。 掩模基板（10）的制造方法包括：准备具有正方形主面（102）的板状基板的基板准备工序;以及形成用于识别或管理的标记（106a〜106d）的标记形成工序 所述基板在所述基板的四个端面（104a〜104d）中的至少多个端面中的每一个上。 四个端面分别与主表面的侧面连续。

公开(公告)号：US20100173234A1

公开(公告)日：2010-07-08

申请号：US12727444

申请日：2010-03-19

申请人： Yasushi OKUBO ,  Mutsumi HARA

发明人： Yasushi OKUBO ,  Mutsumi HARA

IPC分类号： G03F1/00

CPC分类号： G03F1/80

摘要： In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

摘要翻译： 在用作制造半透射型相移掩模的基底构件的光掩模坯料中，其中在其上形成具有期望开口的光半透射相移图案的透光基板，光半透射相移膜， 铬膜和蚀刻掩模膜依次层叠在透光性基板上。 蚀刻掩模膜由具有耐蚀刻铬膜的无机基材料制成。 光掩模坯料还可以具有形成在蚀刻掩模膜上的抗蚀剂膜。

公开(公告)号：US20080286662A1

公开(公告)日：2008-11-20

申请号：US11949566

申请日：2007-12-03

申请人： Yasushi OKUBO ,  Mutsumi Hara

发明人： Yasushi OKUBO ,  Mutsumi Hara

IPC分类号： G03F1/00

CPC分类号： G03F1/80

摘要： In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

摘要翻译： 在用作制造半透射型相移掩模的基底构件的光掩模坯料中，其中在其上形成具有期望开口的光半透射相移图案的透光基板，光半透射相移膜， 铬膜和蚀刻掩模膜依次层叠在透光性基板上。 蚀刻掩模膜由具有耐蚀刻铬膜的无机基材料制成。 光掩模坯料还可以具有形成在蚀刻掩模膜上的抗蚀剂膜。

公开(公告)号：US20110139253A1

公开(公告)日：2011-06-16

申请号：US12962027

申请日：2010-12-07

申请人： Ayako WACHI ,  Takahiko NOJIMA ,  Yasushi OKUBO ,  Hiroaki ITOH

发明人： Ayako WACHI ,  Takahiko NOJIMA ,  Yasushi OKUBO ,  Hiroaki ITOH

IPC分类号： H01L31/02 ,  B05D5/12

CPC分类号： H01L51/444 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/4253 ,  H01L51/442 ,  Y02E10/549

摘要： Provided is an organic photoelectric conversion element containing: a first electrode; a second electrode; and an organic photoelectric conversion layer sandwiched between the first electrode and the second electrode, wherein the first electrode comprises: a conductive fiber layer; and a transparent conductive layer containing a conductive polymer comprising a π conjugated conductive polymer and a polyanion, and an aqueous binder, and at least a part of the transparent conductive layer containing the conductive polymer and the aqueous binder is cross-linked therein.

摘要翻译： 提供一种有机光电转换元件，其包含：第一电极; 第二电极; 以及夹在所述第一电极和所述第二电极之间的有机光电转换层，其中所述第一电极包括：导电纤维层; 以及含有导电聚合物的透明导电层， 共轭导电聚合物和聚阴离子以及含水粘合剂，并且含有导电聚合物和含水粘合剂的透明导电层的至少一部分交联在其中。

公开(公告)号：US20100092877A1

公开(公告)日：2010-04-15

申请号：US12637258

申请日：2009-12-14

申请人： Atsushi KOMINATO ,  Toshiyuki SUZUKI ,  Yasushi OKUBO

发明人： Atsushi KOMINATO ,  Toshiyuki SUZUKI ,  Yasushi OKUBO

IPC分类号： G03F1/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/32 ,  G03F1/78 ,  Y10S430/143

摘要： In a method of manufacturing a mask blank adapted to be formed with a resist pattern by electron beam writing and having a light-shielding film and an etching mask film of an inorganic-based material resistant to etching of the light-shielding film which are formed in this order on a transparent substrate, when forming the etching mask film, shielding is performed using a shielding plate so as to prevent the etching mask film from being formed at least at a side surface of the substrate.

摘要翻译： 在适于通过电子束写入形成抗蚀剂图形的掩模板的制造方法中，具有遮光膜和耐蚀刻遮光膜的无机类材料的蚀刻掩模膜 在透明基板上按顺序，在形成蚀刻掩模膜时，使用屏蔽板进行屏蔽，以防止蚀刻掩模膜至少在基板的侧表面上形成。

公开(公告)号：US20090075185A1

公开(公告)日：2009-03-19

申请号：US12209694

申请日：2008-09-12

申请人： Yasushi OKUBO ,  Masahiro Hashimoto ,  Toshiyuki Suzuki ,  Takayuki Ohnishi ,  Hirohito Anze ,  Hitoshi Sunaoshi ,  Takashi Kamikubo

发明人： Yasushi OKUBO ,  Masahiro Hashimoto ,  Toshiyuki Suzuki ,  Takayuki Ohnishi ,  Hirohito Anze ,  Hitoshi Sunaoshi ,  Takashi Kamikubo

IPC分类号： G03F1/00

CPC分类号： G03F1/80 ,  G03F1/54 ,  G03F1/78

摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

摘要翻译： 在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。 掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。 掩模层由含硅的材料制成。 掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。