摘要:
A watertight connector is provided to create a reduced degree of connection resistance. The connector includes a female housing 20 to be connected with a male housing 10. A seal 30 is provided on the front surface of the female housing 20, and is held by a seal holder 40. The seal holder 40 presses the seal 30 against the front surface of an accommodating portion 11 to adhere the seal 30 to front opening ends of cavities 13 before the housings 10, 20 are connected with each other. Thereafter, tabs 23 penetrate the seal 30, and the seal 30 adheres to the outer surfaces of the tabs 23 to provide sealing between the cavities 13. Accordingly, during the connection of the housings 10, 20, resistance resulting from the sealing between the cavities 13 is only sliding-contact resistance created between the outer surfaces of the tabs 23 and the seal member 30.
摘要:
Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.
摘要:
Three male terminals are inserted respectively into terminal receiving chambers in a male connector housing and a bus bar is inserted into the terminal receiving chambers through a through-hole. As a result, the insertion side portion of the bus bar is press-fitted in reception grooves in bus bar press-fitting portions disposed beneath the through-hole. Thus, the insertion side portion of the bus bar is received in the reception grooves in the three male terminals, and is mechanically fixed to and electrically connected to the male terminals, so that three insulated wires connected respectively to the male terminals are connected together only at the male connector housing.
摘要:
In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
摘要:
A surface voltmeter has a stage having a conductive surface, a vibrating electrode, a vibration part, and an elevation mechanism. While vibrating the vibrating electrode, displacement current from the conductive surface is acquired. A control part controls electrode voltage so that the displacement current becomes a value specified by a computer, and acquires a relationship between the displacement current and the electrode voltage while changing the displacement current. Acquisition of the relationship is performed a plurality of times while changing distance between the vibrating electrode and an object, the electrode voltage which is independent from the distance between the vibrating electrode and the object is obtained as reference voltage, and surface voltage on the object is obtained on the basis of the reference voltage. This makes it possible to remove effects of stray capacitances between the vibrating electrode and other constituent elements therearound from measurement, and easily perform higher-precision measurement.
摘要:
A surface voltmeter comprises a stage having a conductive surface, a vibrating electrode, a vibration part, and an elevation mechanism. While vibrating the vibrating electrode, displacement current from the conductive surface is acquired. A control part controls electrode voltage so that the displacement current becomes a value specified by a computer, and acquires a relationship between the displacement current and the electrode voltage while changing the displacement current. Acquisition of the relationship is performed a plurality of times while changing distance between the vibrating electrode and an object, the electrode voltage which is independent from the distance between the vibrating electrode and the object is obtained as reference voltage, and surface voltage on the object is obtained on the basis of the reference voltage. This makes it possible to remove effects of stray capacitances between the vibrating electrode and other constituent elements therearound from measurement, and easily perform higher-precision measurement.
摘要:
A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要:
A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
摘要:
In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
摘要:
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.