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公开(公告)号：US06896596B2
公开(公告)日：2005-05-24
申请号：US10420098
申请日：2003-04-21
IPC分类号： B24B21/04 , B24B53/007 , B24B53/017 , B24B1/00
CPC分类号： B24B53/017 , B24B21/04
摘要： An ironing assembly for use in chemical mechanical planarization (CMP) is provided. The ironing assembly is designed for use over a linear polishing pad which has a plurality of asperities and applied slurry. The ironing assembly includes an ironing disk having a contact surface. The ironing disk is oriented over the linear polishing pad such that the contact surface of the ironing disk can be applied over the surface of the linear polishing pad to at least partially flatten the plurality of asperities before planarizing a semiconductor wafer surface over the linear polishing pad.
摘要翻译： 提供了一种用于化学机械平面化（CMP）的熨烫组件。 熨烫组件设计用于具有多个凹凸和应用浆料的线性抛光垫。 熨烫组件包括具有接触表面的熨烫盘。 熨烫盘定向在线性抛光垫上，使得熨烫盘的接触表面可以施加在线性抛光垫的表面上，以在平坦化半导体晶片表面之前在线性抛光垫上至少部分地平坦化多个凹凸 。
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公开(公告)号：US06579157B1
公开(公告)日：2003-06-17
申请号：US09823788
申请日：2001-03-30
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B21/04
摘要： A method for smoothing a surface of a polishing pad previously used in planarizing a surface of a substrate in a chemical mechanical planarization (CMP) system is provided. The method starts by conditioning the surface of the polishing pad so as to create a post-conditioned surface having a plurality of asperities. The post-conditioned surface of the polishing pad is then ironed, thus compressing the plurality of asperities onto the post-conditioned surface of the polishing pad such that the plurality of asperities lay substantially flat against the post-conditioned surface of the polishing pad.
摘要翻译： 提供了一种用于平滑化学机械平面化（CMP）系统中用于平坦化基板表面的抛光垫表面的方法。 该方法通过调节抛光垫的表面开始，以便产生具有多个凹凸的后处理表面。 然后熨烫抛光垫的后处理表面，从而将多个凹凸压缩到抛光垫的后处理表面上，使得多个凹凸基本上平坦地抵靠抛光垫的后处理表面。
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公开(公告)号：US06719874B1
公开(公告)日：2004-04-13
申请号：US09823800
申请日：2001-03-30
IPC分类号： B24B100
CPC分类号： B24B37/32
摘要： A chemical mechanical planarization (CMP) system having a polishing pad, a carrier body for holding a wafer, a retaining ring, and an active retaining ring support is provided. The active retaining ring is defined by a circular ring having a thickness and a width. The circular ring is defined by an elastomeric material. The circular ring is configured to be placed between the retaining ring and the carrier body. The circular ring has a plurality of voids therein, and the plurality of voids are defined in locations around the circular ring. The circular ring has a compressibility level that is set by the elastomeric material and the plurality of voids.
摘要翻译： 提供了具有抛光垫，用于保持晶片的载体主体，保持环和主动挡环支架的化学机械平面化（CMP）系统。 主动保持环由具有厚度和宽度的圆形环限定。 圆环由弹性体材料限定。 圆环被配置成放置在保持环和载体之间。 圆环中具有多个空隙，并且多个空隙限定在圆环周围的位置。 圆环具有由弹性体材料和多个空隙设定的可压缩水平。
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公开(公告)号：US06585572B1
公开(公告)日：2003-07-01
申请号：US09644135
申请日：2000-08-22
IPC分类号： B24B100
CPC分类号： B24B37/20 , B24B53/017 , H01L21/30625
摘要： A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.
摘要翻译： 提供化学机械抛光（CMP）系统。 载体具有顶表面和底部区域。 载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片。 还包括制备头，并且被设计成被施加到小于晶片表面的整个部分的晶片的至少一部分。 优选地，制备头和载体被构造成沿相反方向旋转。 此外，准备头还被配置为在从晶片的中心的方向之一到晶片的边缘并且从晶片的边缘到晶片的中心线性移动的同时振荡，以便于精确控制 从晶片的成形层去除材料。
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公开(公告)号：US06386962B1
公开(公告)日：2002-05-14
申请号：US09608510
申请日：2000-06-30
IPC分类号： B24B4700
摘要： The present invention provides a wafer carrier for use with a chemical mechanical planarization apparatus. The wafer carrier includes a vacuum chuck and a retainer ring. The vacuum chuck is configured to hold and rotate a wafer for planarizing a surface topography of the wafer on a polishing pad. The vacuum chuck includes an inner region for holding the wafer and an outer region and further has a groove adapted to decouple the inner region and the outer region. The inner and outer regions of the vacuum chuck are arranged to move independently in a direction orthogonal to a polishing surface of the polishing pad. The retainer ring is disposed on the outer region of the vacuum chuck and is configured to retain the wafer during CMP processing. In this configuration, the decoupled retainer ring and the wafer are arranged to move independently to align to the polishing surface of the polishing pad during CMP processing.
摘要翻译： 本发明提供一种与化学机械平面化装置一起使用的晶片载体。 晶片载体包括真空卡盘和保持环。 真空吸盘构造成保持和旋转晶片，以在抛光垫上平坦化晶片的表面形貌。 真空吸盘包括用于保持晶片的内部区域和外部区域，并且还具有适于使内部区域和外部区域分离的凹槽。 真空吸盘的内部和外部区域被布置成在与抛光垫的抛光表面正交的方向上独立地移动。 保持环设置在真空卡盘的外部区域上，并且被构造成在CMP处理期间保持晶片。 在这种构造中，解耦保持环和晶片被布置成在CMP处理期间独立地移动以与抛光垫的抛光表面对准。
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6.发明授权公开(公告)号：US06520833B1
公开(公告)日：2003-02-18
申请号：US09608513
申请日：2000-06-30
IPC分类号： B24B4900
CPC分类号： B24B37/04 , B24B21/004 , B24B21/04
摘要： A chemical mechanical polishing (CMP) apparatus is provided. A first roller is situated at a first point and a second roller situated at a second point, such that the first point is separate from the second point. A polishing pad strip is also included and has a first end secured to the first roller and a second end secured to the second roller in a web handling arrangement. The polishing pad strip is configured to provide a surface onto which a substrate to be polished is lowered. Preferably, the polishing pad strip is a fixed abrasive pad and is configured to receive chemicals or DI water so as to facilitate a removal of material from a surface of the substrate.
摘要翻译： 提供化学机械抛光（CMP）装置。 第一辊位于第一点，第二辊位于第二点，使得第一点与第二点分离。 还包括抛光垫条，并且具有固定到第一辊的第一端和在纸幅处理装置中固定到第二辊的第二端。 抛光垫条被配置成提供要被抛光的基底被降低到的表面。 优选地，抛光垫条是固定的研磨垫，并且被配置为接收化学品或去离子水，以便于从基材的表面去除材料。
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公开(公告)号：US06902466B2
公开(公告)日：2005-06-07
申请号：US10369919
申请日：2003-02-18
CPC分类号： B24B37/04 , B24B21/004 , B24B21/04
摘要： A chemical mechanical polishing (CMP) apparatus is provided. The CMP apparatus includes a first roller situated at a first point and a second roller situated at a second point. The first point is separate from the second point. Also included in the apparatus is a polishing pad strip having a first end secured to the first roller and a second end secured to the second roller. The first roller and the second roller are configured to reciprocate so that the polishing pad strip oscillates at least partially between the first point and the second point.
摘要翻译： 提供化学机械抛光（CMP）装置。 CMP装置包括位于第一点处的第一辊和位于第二点的第二辊。 第一点与第二点是分开的。 还包括在该设备中的是抛光垫条，其具有固定到第一辊的第一端和固定到第二辊的第二端。 第一辊和第二辊构造成往复运动，使得抛光垫条至少部分地在第一点和第二点之间振荡。
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公开(公告)号：US06561870B2
公开(公告)日：2003-05-13
申请号：US09823593
申请日：2001-03-30
IPC分类号： B24B4916
摘要： An adjustable platen is provided. The adjustable platen includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad of a CMP system. An air bearing is integrated with the platen body at the top region, and the air bearing is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier simply moves the wafer into position over the linear polishing pad.
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