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1.发明授权Methods for aligning a surface of an active retainer ring with a wafer surface for chemical mechanical polishing 失效将活性保持环的表面与用于化学机械抛光的晶片表面对准的方法公开(公告)号：US06843707B2
公开(公告)日：2005-01-18
申请号：US10717096
申请日：2003-11-18
IPC分类号： B24B37/04 , B24B37/16 , B24B37/32 , H01L21/304 , B24B7/19
摘要： CMP methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface of a wafer carrier so that a wafer axis of rotation is gimballed for universal movement relative to a spindle axis of rotation of a wafer spindle. An operation using a retainer ring limits wafer movement on the carrier surface perpendicular to the wafer axis. Another operation limits a direction of permitted movement between the wafer carrier and the retainer ring to only movement parallel to the wafer axis, so that a wafer plane and a retainer ing may be co-planar.
摘要翻译： CMP方法减少了晶片的化学机械抛光边缘的边缘轮廓与边缘内的晶片的化学机械抛光中心部分的中心轮廓之间的差异的原因。 将晶片安装在晶片载体的载体表面上，使得晶片旋转轴线相对于晶片主轴的主轴旋转轴线进行万向移动。 使用保持环的操作限制了垂直于晶片轴线的载体表面上的晶片移动。 另一种操作限制晶片载体和保持环之间允许的移动方向仅仅平行于晶片轴线移动，使得晶片平面和保持器可以是共面的。
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公开(公告)号：US07481695B2
公开(公告)日：2009-01-27
申请号：US09748708
申请日：2000-12-22
IPC分类号： B24B5/00
CPC分类号： B24B41/04 , B24B37/20 , B24B41/061 , B24B49/16 , B24B53/017 , H01L21/30625
摘要： CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.
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3.发明授权Apparatus for aligning a surface of an active retainer ring with a wafer surface for chemical mechanical polishing 失效用于使主动保持环的表面与用于化学机械抛光的晶片表面对准的装置公开(公告)号：US06709322B2
公开(公告)日：2004-03-23
申请号：US09823169
申请日：2001-03-29
IPC分类号： B24B500
摘要： A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface of a wafer carrier so that a wafer axis of rotation is gimballed for universal movement relative to a spindle axis of rotation of a wafer spindle. A retainer ring limits wafer movement on the carrier surface perpendicular to the wafer axis. The retainer ring is mounted on and movable relative to the wafer carrier. A linear bearing is configured with a housing and a shaft so that a direction of permitted movement between the wafer carrier and the retainer ring is only movement parallel to the wafer axis, so that a wafer plane and a retainer ing may be co-planar.
摘要翻译： CMP系统和方法减少了晶片的化学机械抛光边缘的边缘轮廓与边缘内的晶片的化学机械抛光中心部分的中心轮廓之间的差异的原因。 将晶片安装在晶片载体的载体表面上，使得晶片旋转轴线相对于晶片主轴的主轴旋转轴线进行万向移动。 保持环限制垂直于晶片轴线的载体表面上的晶片移动。 保持环安装在晶片载体上并相对于晶片载体可移动。 直线轴承配置有壳体和轴，使得晶片载体和保持环之间允许的移动方向仅与晶片轴线平行，从而晶片平面和保持架可以是共面的。
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4.发明授权Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing 失效用于控制化学机械抛光的保持环和晶片头倾斜的方法公开(公告)号：US06652357B1
公开(公告)日：2003-11-25
申请号：US09668667
申请日：2000-09-22
IPC分类号： B24B4900
CPC分类号： B24B53/017 , B24B41/04 , B24B41/061 , B24B49/16 , H01L21/30625
摘要： A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. The CMP system and method provide the repeatable measurement features while supplying fluids within the carrier to the wafer and to a wafer support without interfering with the polishing operations. Similarly, the CMP system and methods remove fluids from the wafer or puck carrier without interfering with the CMP operations. An initial coaxial relationship between an axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor is enabled to make repeatable measurements, as defined above, of the eccentric forces, and the carrier may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by a linear bearing assembly mounted between the carrier and the sensor, and the carrier may be a wafer or a puck carrier. The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, for example, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring in conjunction with a motor for moving the ring relative to the wafer mounted on the carrier so that an exposed surface of the wafer and a surface of the retainer ring to be engaged by the polishing pad are coplanar during the polishing operation.
摘要翻译： CMP系统和方法可以对施加到晶片或抛光垫调节盘的载体的偏心力进行可重复的测量。 即使这样的力偏心地施加到这样的载体，也可以精确地测量施加到载体上的力。 CMP系统和方法提供可重复的测量特征，同时将载体内的流体供应到晶片和晶片支撑件，而不会干扰抛光操作。 类似地，CMP系统和方法在不干扰CMP操作的情况下从晶片或圆盘载体移除流体。 在施加偏心力期间，保持旋转轴线和载体轴线之间的初始同轴关系，使得传感器能够进行如上所述的偏心力的重复测量，并且载体可以是晶片或 一个冰球载体。 这种初始同轴关系由安装在载体和传感器之间的线性轴承组件维持，并且载体可以是晶片或圆盘载体。 线性轴承组件被提供为单独的直线轴承组件的阵列，其中每个单独的线性轴承组件的尺寸独立于例如载体承载的晶片或圆盘的直径。 线性轴承组件可以与电动机结合使用，用于使环相对于安装在载体上的晶片移动，使得晶片的暴露表面和保持环的表面被抛光垫接合 在抛光操作期间是共面的。
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公开(公告)号：US06640155B2
公开(公告)日：2003-10-28
申请号：US09747765
申请日：2000-12-22
IPC分类号： G06F1900
CPC分类号： B24B37/20 , B24B41/04 , B24B41/061 , B24B49/16 , B24B53/017 , H01L21/30625
摘要： CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.
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6.发明授权Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing 失效用于控制用于化学机械抛光的垫调节头倾斜的装置和方法公开(公告)号：US06443815B1
公开(公告)日：2002-09-03
申请号：US09668705
申请日：2000-09-22
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/04 , B24B41/04 , B24B41/061
摘要： A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. The CMP system and method provide the repeatable measurement features while supplying fluids within the carrier to the wafer and to a wafer support without interfering with the polishing operations. Similarly, the CMP system and methods remove fluids from the wafer or puck carrier without interfering with the CMP operations. An initial coaxial relationship between an axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor is enabled to make repeatable measurements, as defined above, of the eccentric forces, and the carrier may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by a linear bearing assembly mounted between the carrier and the sensor, and the carrier may be a wafer or a puck carrier. The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, for example, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring in conjunction with a motor for moving the ring relative to the wafer mounted on the carrier so that an exposed surface of the wafer and a surface of the retainer ring to be engaged by the polishing pad are coplanar during the polishing operation.
摘要翻译： CMP系统和方法可以对施加到晶片或抛光垫调节盘的载体的偏心力进行可重复的测量。 即使这样的力偏心地施加到这样的载体，也可以精确地测量施加到载体上的力。 CMP系统和方法提供可重复的测量特征，同时将载体内的流体供应到晶片和晶片支撑件，而不会干扰抛光操作。 类似地，CMP系统和方法在不干扰CMP操作的情况下从晶片或圆盘载体移除流体。 在施加偏心力期间，保持旋转轴线和载体轴线之间的初始同轴关系，使得传感器能够进行如上所述的偏心力的重复测量，并且载体可以是晶片或 一个冰球载体。 这种初始同轴关系由安装在载体和传感器之间的线性轴承组件维持，并且载体可以是晶片或圆盘载体。 线性轴承组件被提供为单独的直线轴承组件的阵列，其中每个单独的线性轴承组件的尺寸独立于例如载体承载的晶片或圆盘的直径。 线性轴承组件可以与电动机结合使用，用于使环相对于安装在载体上的晶片移动，使得晶片的暴露表面和保持环的表面被抛光垫接合 在抛光操作期间是共面的。
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7.发明授权Apparatus for controlling retaining ring and wafer head tilt for chemical mechanical polishing 失效用于控制固定环和晶片头倾斜用于化学机械抛光的装置公开(公告)号：US06976903B1
公开(公告)日：2005-12-20
申请号：US10655453
申请日：2003-09-03
IPC分类号： B24B41/04 , B24B41/06 , B24B49/16 , B24B53/007 , H01L21/306 , B24B49/00 , B24B51/00
CPC分类号： B24B53/017 , B24B41/04 , B24B41/061 , B24B49/16 , H01L21/30625
摘要： A CMP system accurately measures eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. An initial coaxial relationship between wafer axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor may measure the eccentric forces. Such initial coaxial relationship is maintained by a linear bearing assembly mounted between the carrier and the sensor. The linear bearing assembly is provided as an array of separate linear bearing assemblies, and may be assembled with a retainer ring in conjunction with a motor for moving the ring relative to the wafer mounted on the carrier so that an exposed surface of the wafer and a surface of the retainer ring to be engaged by the polishing pad are coplanar during the polishing operation.
摘要翻译： CMP系统精确地测量施加到晶片或抛光垫调节盘的载体的偏心力。 在施加偏心力期间，保持晶片旋转轴线和载体轴线之间的初始同轴关系，使得传感器可以测量偏心力。 这种初始同轴关系由安装在载体和传感器之间的直线轴承组件维持。 线性轴承组件设置为分离的直线轴承组件的阵列，并且可以与电动机结合使用，用于相对于安装在载体上的晶片移动环的保持环，使得晶片的暴露表面和 在抛光操作期间由抛光垫接合的保持环的表面是共面的。
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公开(公告)号：US06719874B1
公开(公告)日：2004-04-13
申请号：US09823800
申请日：2001-03-30
IPC分类号： B24B100
CPC分类号： B24B37/32
摘要： A chemical mechanical planarization (CMP) system having a polishing pad, a carrier body for holding a wafer, a retaining ring, and an active retaining ring support is provided. The active retaining ring is defined by a circular ring having a thickness and a width. The circular ring is defined by an elastomeric material. The circular ring is configured to be placed between the retaining ring and the carrier body. The circular ring has a plurality of voids therein, and the plurality of voids are defined in locations around the circular ring. The circular ring has a compressibility level that is set by the elastomeric material and the plurality of voids.
摘要翻译： 提供了具有抛光垫，用于保持晶片的载体主体，保持环和主动挡环支架的化学机械平面化（CMP）系统。 主动保持环由具有厚度和宽度的圆形环限定。 圆环由弹性体材料限定。 圆环被配置成放置在保持环和载体之间。 圆环中具有多个空隙，并且多个空隙限定在圆环周围的位置。 圆环具有由弹性体材料和多个空隙设定的可压缩水平。
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9.发明授权Chemical mechanical polishing apparatus and methods with porous vacuum chuck and perforated carrier film 失效化学机械抛光装置和方法用多孔真空吸盘和穿孔载体膜公开(公告)号：US06752703B2
公开(公告)日：2004-06-22
申请号：US10029515
申请日：2001-12-21
IPC分类号： B24B722
摘要： CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.
摘要翻译： CMP系统和方法提供了从真空卡盘通过载体膜施加到晶片的必要的真空和压力，而不会在CMP操作期间干扰期望的晶片平面化。 可以通过结构从晶片的暴露表面去除先前的晶圆上的低抛光率区域，以在CMP操作期间响应于载体膜上的晶片的力均匀地压缩载体膜。 载体膜的相邻孔之间的距离和直径减小，并且孔的位置处于与通过真空卡盘的通道协调的阵列中。 该结构在CMP操作期间显着降低了载体膜的压缩的最大值。 结果，在CMP操作期间，晶片不会以与载体膜的压缩精确匹配的方式变形，而是保持基本上平坦。
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公开(公告)号：US06659116B1
公开(公告)日：2003-12-09
申请号：US10319758
申请日：2002-12-13
IPC分类号： B08B302
CPC分类号： H01L21/67051 , B08B3/02 , B24B37/04 , B24B55/00 , Y10S134/902
摘要： A system for rinsing and cleaning a wafer carrier and a semiconductor wafer mounted thereon during a polishing process is provided. The system comprises a head spray assembly that includes a spray nozzle and a spray cavity. At least a part of the head spray assembly is moveably positionable between a park position and a spray position. The spray position is proximate to the wafer carrier such that liquid discharged from the spray nozzle is in liquid communication with the wafer carrier and the semiconductor wafer. The liquid as well as the materials rinsed from the wafer carrier and semiconductor wafer may be retained in the spray cavity and channeled out of the head spray assembly.
摘要翻译： 提供了一种用于在抛光过程中漂洗和清洁晶片载体和安装在其上的半导体晶片的系统。 该系统包括头喷射组件，其包括喷嘴和喷雾腔。 喷头组件的至少一部分可移动地定位在停放位置和喷射位置之间。 喷射位置靠近晶片载体，使得从喷嘴排出的液体与晶片载体和半导体晶片液体连通。 从晶片载体和半导体晶片漂洗的液体以及材料可以保留在喷雾腔中并引导出喷头组件。
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