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    Low hydrogen concentration charge-trapping layer structures for non-volatile memory and methods of forming the same
    1.
    发明申请
    Low hydrogen concentration charge-trapping layer structures for non-volatile memory and methods of forming the same 有权
    用于非挥发性记忆体的低氢浓度电荷捕获层结构及其形成方法

    公开(公告)号：US20070108497A1

    公开(公告)日：2007-05-17

    申请号：US11274781

    申请日：2005-11-15

    申请人： Yen-Hao Shih ,  Min-Ta Wu ,  Shih-Chin Lee ,  Jung-Yu Hsieh ,  Erh-Kun Lai ,  Kuang Hsieh

    发明人： Yen-Hao Shih ,  Min-Ta Wu ,  Shih-Chin Lee ,  Jung-Yu Hsieh ,  Erh-Kun Lai ,  Kuang Hsieh

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/518

    摘要： Memory cells comprising: a semiconductor substrate having at least two source/drain regions separated by a channel region; a charge-trapping structure disposed above the channel region; and a gate disposed above the charge-trapping structure; wherein the charge-trapping structure comprises a bottom insulating layer, a first charge-trapping layer, and a second charge-trapping layer, wherein an interface between the bottom insulating layer and the substrate has a hydrogen concentration of less than about 3×1011/cm−2, and methods for forming such memory cells.

    摘要翻译： 存储单元包括：半导体衬底，具有由沟道区分开的至少两个源极/漏极区域; 设置在通道区域上方的电荷捕获结构; 以及设置在电荷捕获结构上方的栅极; 其中所述电荷捕获结构包括底部绝缘层，第一电荷俘获层和第二电荷俘获层，其中所述底部绝缘层和所述衬底之间的界面的氢浓度小于约3×10 6， 11/2/2，以及用于形成这种记忆单元的方法。

    Low hydrogen concentration charge-trapping layer structures for non-volatile memory
    3.
    发明授权
    Low hydrogen concentration charge-trapping layer structures for non-volatile memory 有权
    用于非易失性存储器的低氢浓度电荷捕获层结构

    公开(公告)号：US08022465B2

    公开(公告)日：2011-09-20

    申请号：US11274781

    申请日：2005-11-15

    申请人： Yen-Hao Shih ,  Min-Ta Wu ,  Shin-Chin Lee ,  Jung-Yu Hsieh ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    发明人： Yen-Hao Shih ,  Min-Ta Wu ,  Shin-Chin Lee ,  Jung-Yu Hsieh ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/518

    摘要： Memory cells comprising: a semiconductor substrate having at least two source/drain regions separated by a channel region; a charge-trapping structure disposed above the channel region; and a gate disposed above the charge-trapping structure; wherein the charge-trapping structure comprises a bottom insulating layer, a first charge-trapping layer, and a second charge-trapping layer, wherein an interface between the bottom insulating layer and the substrate has a hydrogen concentration of less than about 3×1011/cm−2, and methods for forming such memory cells.

    摘要翻译： 存储单元包括：半导体衬底，具有由沟道区分开的至少两个源极/漏极区域; 设置在通道区域上方的电荷捕获结构; 以及设置在电荷捕获结构上方的栅极; 其中所述电荷捕获结构包括底部绝缘层，第一电荷俘获层和第二电荷俘获层，其中所述底部绝缘层和所述基底之间的界面的氢浓度小于约3×1011 / cm -2，以及形成这种记忆单元的方法。

    Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof
    5.
    发明授权
    Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof 有权
    具有改进的带 - 带隧道感应热电子注入效率的非易失性存储器件及其制造方法

    公开(公告)号：US07652320B2

    公开(公告)日：2010-01-26

    申请号：US11070226

    申请日：2005-03-03

    申请人： Min-Ta Wu ,  Hang-Ting Lue

    发明人： Min-Ta Wu ,  Hang-Ting Lue

    IPC分类号： H01L29/10

    CPC分类号： H01L27/11568 ,  G11C16/0466 ,  H01L27/115 ,  H01L29/513 ,  H01L29/66833 ,  H01L29/792

    摘要： A semiconductor device includes a semiconductor substrate having a first conductivity type. The semiconductor substrate includes a first diffusion region having the first conductivity type, a second diffusion region having the first conductivity type, and a channel region between the first diffusion region and the second diffusion region. The device further includes a control gate over the channel region and at least one sub-gate over the first and second diffusion regions.

    摘要翻译： 半导体器件包括具有第一导电类型的半导体衬底。 半导体衬底包括具有第一导电类型的第一扩散区，具有第一导电类型的第二扩散区和第一扩散区与第二扩散区之间的沟道区。 该器件还包括在沟道区上的控制栅极和在第一和第二扩散区上的至少一个子栅极。

    NON-VOLATILE MEMORY CELL AND OPERATING METHOD THEREOF
    7.
    发明申请
    NON-VOLATILE MEMORY CELL AND OPERATING METHOD THEREOF 审中-公开
    非挥发性记忆细胞及其操作方法

    公开(公告)号：US20070008777A1

    公开(公告)日：2007-01-11

    申请号：US11308777

    申请日：2006-05-03

    申请人： Ming-Hsiang Hsueh ,  Ming-Chang Kuo ,  Min-Ta Wu ,  Chao-Lun Yu

    发明人： Ming-Hsiang Hsueh ,  Ming-Chang Kuo ,  Min-Ta Wu ,  Chao-Lun Yu

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0466 ,  G11C16/10 ,  H01L29/42352 ,  H01L29/792 ,  H01L29/7923 ,  H01L29/7926

    摘要： A non-volatile memory is described. The non-volatile memory includes a first source/drain region, a second source/drain region, a charge-trapping layer and a gate layer. The first source/drain region is disposed beside the top sidewall of a trench in a substrate. The second source/drain region is disposed in the substrate at the bottom of the trench. The gate layer is disposed in the trench and on the substrate. The charge-trapping layer is disposed between the gate layer and the substrate. A plurality of assisted charges is stored in one of the sides of the charge-trapping layer.

    摘要翻译： 描述非易失性存储器。 非易失性存储器包括第一源极/漏极区域，第二源极/漏极区域，电荷俘获层和栅极层。 第一源极/漏极区域设置在衬底中的沟槽的顶侧壁旁边。 第二源极/漏极区域设置在沟槽底部的衬底中。 栅极层设置在沟槽和衬底上。 电荷捕获层设置在栅极层和衬底之间。 多个辅助电荷存储在电荷捕获层的一侧中。