摘要:
The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.
摘要:
A composition for preparing a porous interlayer dielectric thin film which includes a saccharide or saccharide derivative, a thermo-stable organic or inorganic matrix precursor, and a solvent for dissolving the two solid components. Also provided is a dielectric thin film having evenly distributed nano-pores with a diameter of less than 50 Å, which is required for semiconductor devices.
摘要:
Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.
摘要:
A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.
摘要:
The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having evenly distributed nano-pores with a diameter less than 50 Å, which is required for semiconductor devices.
摘要:
The present invention provides a method for forming insulating film between interconnect layers in microelectronic devices, said method comprising the steps of: preparing siloxane-based resins by hydrolyzing and polycondensing the compound represented by the following formula (1), with or without the compound represented by the following formula (2), in an organic solvent in the presence of a catalyst and water; coating a silicon substrate with the siloxane-based resins dissolved in an organic solvent; and heat-curing the resulting coating film: RSiX1X2X3 [2] in which, R is hydrogen atom, C1˜C3 alkyl group, C3˜C10 cycloalkyl group, or C6˜C15 aryl group; X1, X2 and X3 are independently C1˜C3 alkyl group, C1˜C10 alkoxy group, or halogen atom; n is an integer ranging from 3 to 8; and m is an integer ranging from 1 to 10.
摘要:
Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.
摘要:
Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.
摘要:
A styrene random copolymer includes at least one unit of styrene derivative and at least one unit of macromonomer. The at least one unit of styrene derivative is polymerized from a styrene derivative monomer of formula (1). The at least one unit of macromonomer is polymerized from a macromonomer of formula (2). In formulae (1) and (2), R1 is selected from the group consisting of hydrogen, halogen, and alkyl groups with 1˜20 carbon atoms, R2 is at least one selected from the group consisting of saturated hydrocarbons with 1˜20 carbon atoms, aromatic groups, and cycloalkyl groups with the proviso that R2 is not —CO— or —CH2—C6H4—, R3 is a saturated hydrocarbon group with 1˜10 carbon atoms, X is at least one ion polymerizable monomer unit. The amount of the macromonomer is 0.1˜50% by weight based on the weight of the random copolymer, and the weight average molecular weight of the random copolymer ranges from about 50,000 to about 2,000,000.
摘要:
A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.