公开(公告)号：US20140167080A1

公开(公告)日：2014-06-19

申请号：US13831965

申请日：2013-03-15

申请人： Jing-En Huang ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

发明人： Jing-En Huang ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

IPC分类号： H01L27/15

CPC分类号： H01L27/153 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED.

摘要翻译： 发光器件包括衬底，发光单元，绝缘层，电流分布层和反射层。 基板具有上表面。 发光单元设置在上表面上并且包括至少一个第一发光二极管（LED）和至少一个第二LED。 第一LED的第一侧壁与第二LED的第二侧壁相邻，以限定暴露上表面的一部分的凹部。 绝缘层至少覆盖第一侧壁和第二侧壁。 电流分布层覆盖凹部，并且至少覆盖第二LED的一部分。 反射层覆盖电流分布层并电连接到第一LED和第二LED。

公开(公告)号：US09871169B2

公开(公告)日：2018-01-16

申请号：US14019553

申请日：2013-09-06

申请人： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

发明人： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

IPC分类号： H01L33/40 ,  H01L33/42

CPC分类号： H01L33/405 ,  H01L33/42

摘要： A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.

公开(公告)号：US08872202B2

公开(公告)日：2014-10-28

申请号：US13917646

申请日：2013-06-14

申请人： Yi-Ru Huang ,  Jing-En Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

发明人： Yi-Ru Huang ,  Jing-En Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

IPC分类号： H01L33/22

CPC分类号： H01L33/22

摘要： A light-emitting device including a substrate, a light emitting structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The light emitting structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved.

摘要翻译： 提供了包括基板，发光结构和粗糙结构的发光器件。 基板具有彼此相对的上表面和下表面，以及连接上表面和下表面的环形侧表面。 发光结构设置在基板的上表面上。 粗糙结构形成在基板的环形侧表面上。 基板的厚度和粗糙结构的厚度的比例大于或等于1且小于或等于20.因此，可以提高发光器件的整体发光效率。

公开(公告)号：US08916889B2

公开(公告)日：2014-12-23

申请号：US13831965

申请日：2013-03-15

申请人： Jing-En Huang ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

发明人： Jing-En Huang ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

IPC分类号： H01L27/15 ,  H01L33/36 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/62

CPC分类号： H01L27/153 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED.

摘要翻译： 发光器件包括衬底，发光单元，绝缘层，电流分布层和反射层。 基板具有上表面。 发光单元设置在上表面上并且包括至少一个第一发光二极管（LED）和至少一个第二LED。 第一LED的第一侧壁与第二LED的第二侧壁相邻，以限定暴露上表面的一部分的凹部。 绝缘层至少覆盖第一侧壁和第二侧壁。 电流分布层覆盖凹部，并且至少覆盖第二LED的一部分。 反射层覆盖电流分布层并电连接到第一LED和第二LED。

公开(公告)号：US08674396B1

公开(公告)日：2014-03-18

申请号：US13831864

申请日：2013-03-15

申请人： Chih-Ling Wu ,  Jing-En Huang ,  Yi-Ru Huang ,  Yu-Yun Lo

发明人： Chih-Ling Wu ,  Jing-En Huang ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/44

摘要： An electrode pad structure of a light emitting device includes an insulation layer, a first type electrode pad and at least one second type electrode pad. The light emitting device has a centerline and the light emitting device is divided into two equal blocks via the centerline. The first type electrode pad is disposed on the insulation layer and symmetrical to the centerline. The second type electrode pad is disposed on the insulation layer and symmetrical to the centerline. The first type electrode pad is coplanar with the second type electrode pad, and a portion of the insulation layer is exposed between the first type electrode pad and the second type electrode pad.

摘要翻译： 发光器件的电极焊盘结构包括绝缘层，第一类型电极焊盘和至少一个第二类型电极焊盘。 发光器件具有中心线，并且发光器件经由中心线被分成两个相等的块。 第一类电极焊盘设置在绝缘层上并与中心线对称。 第二类电极焊盘设置在绝缘层上并与中心线对称。 第一类型电极焊盘与第二类型电极焊盘共面，并且绝缘层的一部分暴露在第一型电极焊盘和第二型电极焊盘之间。

公开(公告)号：US20150021639A1

公开(公告)日：2015-01-22

申请号：US14019553

申请日：2013-09-06

申请人： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

发明人： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/42

摘要： A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.

摘要翻译： 提供了包括衬底，半导体外延层和反射导电结构层的发光二极管结构。 半导体外延层设置在衬底上并暴露衬底的一部分。 反射导电结构层覆盖半导体外延层的一部分和由半导体外延层曝光的基板的部分。

公开(公告)号：US20140159082A1

公开(公告)日：2014-06-12

申请号：US13917646

申请日：2013-06-14

申请人： Yi-Ru Huang ,  Jing-En Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

发明人： Yi-Ru Huang ,  Jing-En Huang ,  Chih-Ling Wu ,  Yu-Yun Lo

IPC分类号： H01L33/22

CPC分类号： H01L33/22

摘要： A light-emitting device including a substrate, a photoelectric structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The photoelectric structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved.

摘要翻译： 提供了包括基板，光电结构和粗糙结构的发光器件。 基板具有彼此相对的上表面和下表面，以及连接上表面和下表面的环形侧表面。 光电结构设置在基板的上表面上。 粗糙结构形成在基板的环形侧表面上。 基板的厚度和粗糙结构的厚度的比例大于或等于1且小于或等于20.因此，可以提高发光器件的整体发光效率。

公开(公告)号：US08829543B2

公开(公告)日：2014-09-09

申请号：US13787765

申请日：2013-03-06

申请人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

发明人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/60 ,  H01L33/06 ,  H01L33/40 ,  H01L33/08 ,  H01L33/20

CPC分类号： H01L33/60 ,  H01L33/06 ,  H01L33/20 ,  H01L33/405

摘要： A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.

摘要翻译： 提供了包括第一类型掺杂半导体层，发光层，第二类型掺杂半导体层和反射层的半导体发光器件。 第一类掺杂半导体层具有台面部分和凹陷部分。 发光层设置在台面部分上，具有将第一表面与第二表面连接的第一表面，第二表面和第一侧表面。 第二种掺杂半导体层设置在发光层上，并具有连接第三表面和第四表面的第三表面，第四表面和第二侧表面。 从平行于发光层的观察方向观察，反射层覆盖第一侧面的至少一部分和第二侧面的至少一部分。 还提供了一种倒装芯片封装器件。

公开(公告)号：US20130277641A1

公开(公告)日：2013-10-24

申请号：US13787765

申请日：2013-03-06

申请人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

发明人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC分类号： H01L33/60 ,  H01L33/06

CPC分类号： H01L33/60 ,  H01L33/06 ,  H01L33/20 ,  H01L33/405

摘要： A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.

摘要翻译： 提供了包括第一类型掺杂半导体层，发光层，第二类型掺杂半导体层和反射层的半导体发光器件。 第一类掺杂半导体层具有台面部分和凹陷部分。 发光层设置在台面部分上，具有将第一表面与第二表面连接的第一表面，第二表面和第一侧表面。 第二种掺杂半导体层设置在发光层上，并具有连接第三表面和第四表面的第三表面，第四表面和第二侧表面。 从平行于发光层的观察方向观察，反射层覆盖第一侧面的至少一部分和第二侧面的至少一部分。 还提供了一种倒装芯片封装器件。

公开(公告)号：US08587013B2

公开(公告)日：2013-11-19

申请号：US13670438

申请日：2012-11-06

申请人： Po-Jen Su ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yi-Ju Shih

发明人： Po-Jen Su ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yi-Ju Shih

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A semiconductor package structure includes an insulating substrate, a patterned conductive layer, a light emitting diode (LED) chip and a conductive connection part. The insulating substrate has an upper surface divided into an element configuration region and an element bonding region. The patterned conductive layer includes plural circuits located in the element configuration region and at least one bonding pad located in the element bonding region. The LED chip is flip chip bonded on the patterned conductive layer and electrically connected to the circuits. The conductive connection part has a first end point electrically connected to the bonding pad and a second end point electrically connected to an external circuit. The bonding pad and a corner of the LED chip are disposed correspondingly. A horizontal distance between an apex of the corner and the first end point of the conductive connection part is greater than or equal to 30 micrometers.

摘要翻译： 半导体封装结构包括绝缘衬底，图案化导电层，发光二极管（LED）芯片和导电连接部分。 绝缘基板具有分为元件配置区域和元件接合区域的上表面。 图案化导电层包括位于元件配置区域中的多个电路和位于元件接合区域中的至少一个焊盘。 LED芯片在图案化的导电层上被倒装芯片接合并电连接到电路。 导电连接部分具有电连接到焊盘的第一端点和电连接到外部电路的第二端点。 接合焊盘和LED芯片的角部相应地设置。 角的顶点与导电连接部的第一端点之间的水平距离大于或等于30微米。