公开(公告)号：US07821087B2

公开(公告)日：2010-10-26

申请号：US11685723

申请日：2007-03-13

申请人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

发明人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：US20050063222A1

公开(公告)日：2005-03-24

申请号：US10665945

申请日：2003-09-19

申请人： Yiming Huai ,  Paul Nguyen ,  Frank Albert

发明人： Yiming Huai ,  Paul Nguyen ,  Frank Albert

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/14

CPC分类号： G11C11/16

摘要： A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).

摘要翻译： 公开了一种用于提供和磁性元件的方法和系统。 在一个方面，磁性元件至少包括钉扎层，自由层和驻留在被钉扎层和自由层之间的电流限制层。 被钉扎层是铁磁性的并且具有第一磁化强度。 电流限制层在绝缘矩阵中具有至少一个通道。 通道是导电的并延伸通过电流限制层。 自由层是铁磁性的并且具有第二磁化强度。 被钉扎层，自由层和电流限制层被配置为允许使用自旋转移来切换自由层的磁化。 磁性元件还可以包括其它层，包括用于自旋阀的层，自旋隧道结，双自旋阀，双自旋隧道结，以及双自旋阀/隧道结构， 。

公开(公告)号：US20050201023A1

公开(公告)日：2005-09-15

申请号：US11114946

申请日：2005-04-25

申请人： Yiming Huai ,  Paul Nguyen

发明人： Yiming Huai ,  Paul Nguyen

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/33

CPC分类号： H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。 磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。 钉扎层具有沿第一方向固定的磁化。 非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。 阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。 第二被钉扎层具有沿第二方向固定的磁化。 磁性元件构造成允许自由层的磁化改变方向，这是由于当写入电流通过磁性元件时的自旋转移。

公开(公告)号：US20050184839A1

公开(公告)日：2005-08-25

申请号：US10783416

申请日：2004-02-19

申请人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

发明人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01H9/00 ,  H01L43/10

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：US20050045913A1

公开(公告)日：2005-03-03

申请号：US10649119

申请日：2003-08-26

申请人： Paul Nguyen ,  Yiming Huai

发明人： Paul Nguyen ,  Yiming Huai

IPC分类号： G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L31/109

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够存储多个位的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。 第一固定层是铁磁性的并且具有沿第一方向固定的第一固定层磁化。 第一非磁性层位于第一被钉扎层和第一自由层之间。 第一自由层是铁磁性的并且具有第一自由层磁化。 第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。 连接层位于第二被钉扎层和第一自由层之间。 第二非磁性层位于第二被钉扎层和第二自由层之间。 第二自由层是铁磁性的并且具有第二自由层磁化。 磁性元件被配置为当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

公开(公告)号：US20060049472A1

公开(公告)日：2006-03-09

申请号：US10938219

申请日：2004-09-09

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US20070120211A1

公开(公告)日：2007-05-31

申请号：US11699160

申请日：2007-01-29

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

IPC分类号： H01L29/82

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system for providing a magnetic element are described. The method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 描述了一种用于提供磁性元件的方法和系统。 该方法和系统包括在被钉扎层和自由层之间提供单个钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 自由层是一个简单的自由层。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US20060081953A1

公开(公告)日：2006-04-20

申请号：US11239969

申请日：2005-09-30

申请人： Paul Nguyen ,  Yiming Huai

发明人： Paul Nguyen ,  Yiming Huai

IPC分类号： H01L43/00

CPC分类号： H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  Y10T428/26 ,  Y10T428/261 ,  Y10T428/265

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

公开(公告)号：US20070159734A1

公开(公告)日：2007-07-12

申请号：US11685723

申请日：2007-03-13

申请人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

发明人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：US20050237787A1

公开(公告)日：2005-10-27

申请号：US10829313

申请日：2004-04-21

申请人： Yiming Huai ,  Paul Nguyen

发明人： Yiming Huai ,  Paul Nguyen

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a free layer, a spacer layer, and a pinned layer. The free layer is ferromagnetic and has a free layer magnetization. The spacer layer is nonmagnetic and resides between the pinned and free layers. The pinned layer includes first and second ferromagnetic layers having first and second magnetizations, a nonmagnetic spacer layer, and a spin depolarization layer. Residing between the first and second ferromagnetic layers, the nonmagnetic spacer layer is conductive and promotes antiparallel orientations between the first and second magnetizations. The spin depolarization layer is configured to depolarize at least a portion of a plurality of electrons passing through it. The magnetic element is also configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供自由层，间隔层和钉扎层。 自由层是铁磁性的并且具有自由层磁化。 间隔层是非磁性的并且位于被钉扎层和自由层之间。 被钉扎层包括具有第一和第二磁化的第一和第二铁磁层，非磁性间隔层和自旋去极化层。 在第一和第二铁磁层之间，非磁性间隔层是导电的并促进第一和第二磁化之间的反平行取向。 自旋去极化层被配置为使通过其的多个电子的至少一部分去极化。 磁性元件还被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层磁化改变方向。