摘要:
The present invention refers to a continuous process for the manufacture of methyl mercaptan using Mo—O—K-based catalysts. It is further described that the total selectivity of methylmercaptan can be increased by at least 1% by lowering the total gas hourly space velocity. The invention further refers to a process for the preparation of a solid, preformed catalyst system.
摘要:
The present invention refers to a continuous process for the manufacture of methyl mercaptan using Mo—O—K-based catalysts. It is further described that the total selectivity of methylmercaptan can be increased by at least 1% by lowering the total gas hourly space velocity. The invention further refers to a process for the preparation of a solid, preformed catalyst system.
摘要:
The present invention refers to a continuous process for the manufacture of methyl mercaptan using Mo—O—K-based catalysts. It is further described that the total selectivity of methylmercaptan can be increased by at least 1% by lowering the total gas hourly space velocity. The invention further refers to a process for the preparation of a solid, preformed catalyst system.
摘要:
The present invention refers to a continuous process for the manufacture of methyl mercaptan using Mo-O—K-based catalysts. It is further described that the total selectivity of methylmercaptan can be increased by at least 1% by lowering the total gas hourly space velocity. The invention further refers to a process for the preparation of a solid, preformed catalyst system.
摘要:
This invention is related to a preparation method of a supported catalyst Mo—O—K-MexOy for the synthesis of methanethiol from H2S-containing syngas. The catalyst comprises of an active component of Mo—O—K-based species, an active promoter and a support denoted as metal (or metals)-carrier. The support is prepared by electroless plating method in such a way that the metal or metals chosen are plated onto the surface of the carrier. Transition metal, especially Fe, Co or Ni are selected to be the plating metal, while SiO2, Al2O3 or TiO2 are selected to be carrier. The catalyst thus prepared is found to be efficient for the synthesis of methanethiol from H2S-containing syngasor carbon oxides/hydrogen mixtures, especially regarding a minor formation of the by-product CO2.
摘要:
This invention is related to a preparation method of a supported catalyst Mo—O—K-MexOy for the synthesis of methanethiol from H2S-containing syngas. The catalyst comprises of an active component of Mo—O—K-based species, an active promoter and a support denoted as metal (or metals)-carrier. The support is prepared by electroless plating method in such a way that the metal or metals chosen are plated onto the surface of the carrier. Transition metal, especially Fe, Co or Ni are selected to be the plating metal, while SiO2, Al2O3 or TiO2 are selected to be carrier. The catalyst thus prepared is found to be efficient for the synthesis of methanethiol from H2S-containing syngasor carbon oxides/hydrogen mixtures, especially regarding a minor formation of the by-product CO2.
摘要:
A approach is described for allowing electronic design, verification, and optimization tools to implement very efficient approaches to allow the tools to directly address the effects of manufacturing processes, e.g., to identify and prevent problems caused by lithography processing. Fast models and pattern checking are employed to integrate lithography and manufacturing aware processes within EDA tools such as routers.
摘要:
Some embodiments provide a method and system for identifying error markers for patterns within a design layout that do not meet the manufacturing constraints. Some embodiments extend a region from the error marked region to extract a pattern for decomposition analysis. Some embodiments compare the extracted pattern to known patterns stored in a library, which also stores at least one previously computed decomposition solution for each known pattern. For an extracted pattern existing within the library, some embodiments retrieve the previously computed decomposition solution from the library. For an extracted pattern that does not exist within the library, some embodiments use one or more simulations to determine a decomposition solution for the extracted pattern. The resulting decomposition solution replaces the extracted pattern within the design layout producing a variant of the original layout that contains the decomposed solution for the pattern.
摘要:
One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.
摘要:
A system that verifies a simulated wafer image against an intended design. During operation, the system receives a design. Next, the system generates a skeleton from the design, wherein the skeleton specifies cell placements and associated bounding boxes for the cell placements, but does not include geometries for the cell placements. The system then computes environments for cell placements based on the skeleton. Next, the system generates templates for cell placements, wherein a template for a cell placement specifies the cell placement and the environment surrounding the cell placement. The system then generates the simulated wafer image by performing model-based simulations for cell placements associated with unique templates.