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公开(公告)号：US5016137A
公开(公告)日：1991-05-14
申请号：US443167
申请日：1989-11-30
CPC分类号： H01G4/008 , H01G4/012 , H01G4/1254 , H01G4/1263 , H01G4/30
摘要： A multi-layer ceramic capacitor having a large capacitance comprising:(a) internal electrode layers whose thickness is y .mu.m, and(b) ceramic dielectric layers, whose thickness is x .mu.m, extending between the internal electrode layers, where x, y and x/y are defined by the formula 1.0.ltoreq.x.ltoreq.7.0, 0.07.ltoreq.y.ltoreq.0.7 and 10.0.ltoreq.x/y.ltoreq.100.0 respectively.
摘要翻译： 一种具有大电容的多层陶瓷电容器，包括：（a）厚度为μm的内部电极层，和（b）在内部电极层之间延伸的厚度为μm的陶瓷电介质层，其中x， y和x / y分别由公式1.0分别由公式1.0定义，其中，分别为公式1.0 = 0.07,0.07
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公开(公告)号：US20140178571A1
公开(公告)日：2014-06-26
申请号：US14122797
申请日：2012-05-17
IPC分类号： H05K3/18
CPC分类号： H05K3/182 , B05D1/28 , B05D5/12 , B05D7/52 , B41M1/30 , C23C18/1608 , C23C18/1651 , C23C18/2086 , C23C18/30 , C23C18/36 , C23C18/405 , H05K2201/0154 , H05K2203/0793
摘要： The purpose of the present invention is to provide a method for using a metal ion solution of low concentration to efficiently form a metal film pattern of excellent accuracy and reliable adhesion on a resin substrate. A resin substrate having a metal film pattern formed thereon is produced by a method that includes the following steps (a) to (e): (a) a step for pattern-printing of a latent image agent (2) onto the surface of a resin substrate (1) ; (b) a step for bringing the area imprinted with the latent image agent (2) into contact with a solution containing metal ions, and forming a metal salt (3); (c) a step for bringing the metal salt (3) into contact with an acidic treatment liquid containing a reducing agent, and reducing the metal salt; (d) a step for forming an electroless nickel plating film (5) on the area imprinted with the latent image agent; and (e) a step for precipitating an electroless copper plating (6) onto the surface of the nickel plating film (5).
摘要翻译： 本发明的目的是提供一种使用低浓度的金属离子溶液来有效地形成在树脂基板上具有优异的精度和可靠的粘附性的金属膜图案的方法。 通过包括以下步骤（a）至（e）的方法制备其上形成有金属膜图案的树脂基板：（a）将潜像剂（2）图案印刷到表面上的步骤 树脂基板（1）; （b）使潜像剂（2）印刷的区域与含有金属离子的溶液接触并形成金属盐（3）的步骤; （c）使金属盐（3）与含有还原剂的酸性处理液接触并还原金属盐的工序; （d）在印有潜像剂的区域上形成化学镀镍膜（5）的步骤; 和（e）将化学镀铜（6）析出到镀镍膜（5）的表面上的步骤。
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公开(公告)号：US5275001A
公开(公告)日：1994-01-04
申请号：US943488
申请日：1992-09-11
CPC分类号： H01L35/22
摘要： A thermoelectric semiconductor element is disclosed which is particularly low in toxicity and inexpensive. The element is mainly composed of a complex oxide comprising strontium and titanium. An oxide semiconductor possessing oxygen deficiency is used as the n-type element. According to the invention, as compared with a thermoelectric semiconductor element for thermoelectric cooling using a conventional Bi-Te thermoelectric semiconductor which is particularly toxic due to addition of Se or the like, the toxicity of the n-type semiconductor element part is lowered, and a thermoelectric semiconductor element excellent in performance is obtained.
摘要翻译： 公开了一种特别低的毒性和便宜的热电半导体元件。 元素主要由包含锶和钛的复合氧化物组成。 使用具有缺氧性的氧化物半导体作为n型元素。 根据本发明，与使用由于添加Se等而特别有毒的常规Bi-Te热电半导体的热电冷却用热电半导体元件相比，n型半导体元件部件的毒性降低， 获得了性能优异的热电半导体元件。
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公开(公告)号：US5221872A
公开(公告)日：1993-06-22
申请号：US889064
申请日：1992-05-26
申请人： Masamitsu Nishida , Hamae Ando , Kouichi Kugimiya
发明人： Masamitsu Nishida , Hamae Ando , Kouichi Kugimiya
IPC分类号： C04B35/00 , C04B35/49 , H01L41/18 , H01L41/187 , H01L41/39
CPC分类号： H01L41/187 , C04B35/49
摘要： A piezoelectric ceramic comprising at least two kinds of ceramic domains that are different from each other either in composition or in piezoelectric characteristics. It is made possible to produce a piezoelectric ceramic with better piezoelectric characteristics than that composed of a single kind of ceramic domain by having the compositions or the piezoelectric characteristics of each ceramic domain properly selected. For example, it is possible to obtain a piezoelectric ceramic of an extremely small rate of change in resonance frequency in response to a change in temperature by having a ceramic domain with a positive rate of change in resonance frequency in response to a change in temperature and the one with a negative rate of change in resonance frequency in response to a change in temperature combined.
摘要翻译： 包括在组成或压电特性中彼此不同的至少两种陶瓷畴的压电陶瓷。 通过具有适当地选择每个陶瓷畴的组成或压电特性，可以生产出具有比由单种陶瓷域组成的压电特性更好的压电特性的压电陶瓷。 例如，可以通过响应于温度的变化而具有谐振频率的正的变化率的陶瓷区域而响应于温度变化而获得极小的谐振频率变化率的压电陶瓷，并且 响应于温度变化的共振频率的负变化率。
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5.发明授权Method for producing a resin substrate having a metal film pattern formed thereon 有权用于制造其上形成有金属膜图案的树脂基板的方法公开(公告)号：US09578751B2
公开(公告)日：2017-02-21
申请号：US14122797
申请日：2012-05-17
IPC分类号： B05D5/12 , C23C18/30 , H05K3/18 , B41M1/30 , C23C18/16 , C23C18/20 , B05D7/00 , B05D1/28 , C23C18/36 , C23C18/40
CPC分类号： H05K3/182 , B05D1/28 , B05D5/12 , B05D7/52 , B41M1/30 , C23C18/1608 , C23C18/1651 , C23C18/2086 , C23C18/30 , C23C18/36 , C23C18/405 , H05K2201/0154 , H05K2203/0793
摘要： The purpose of the present invention is to provide a method for using a metal ion solution of low concentration to efficiently form a metal film pattern of excellent accuracy and reliable adhesion on a resin substrate. A resin substrate having a metal film pattern formed thereon is produced by a method that includes the following steps (a) to (e): (a) a step for pattern-printing of a latent image agent (2) onto the surface of a resin substrate (1) ; (b) a step for bringing the area imprinted with the latent image agent (2) into contact with a solution containing metal ions, and forming a metal salt (3); (c) a step for bringing the metal salt (3) into contact with an acidic treatment liquid containing a reducing agent, and reducing the metal salt; (d) a step for forming an electroless nickel plating film (5) on the area imprinted with the latent image agent; and (e) a step for precipitating an electroless copper plating (6) onto the surface of the nickel plating film (5).
摘要翻译： 本发明的目的是提供一种使用低浓度的金属离子溶液来有效地形成在树脂基板上具有优异的精度和可靠的粘附性的金属膜图案的方法。 通过包括以下步骤（a）至（e）的方法制备其上形成有金属膜图案的树脂基板：（a）将潜像剂（2）图案印刷到表面上的步骤 树脂基板（1）; （b）使潜像剂（2）印刷的区域与含有金属离子的溶液接触并形成金属盐（3）的步骤; （c）使金属盐（3）与含有还原剂的酸性处理液接触并还原金属盐的工序; （d）在印有潜像剂的区域上形成化学镀镍膜（5）的步骤; 和（e）将化学镀铜（6）析出到镀镍膜（5）的表面上的步骤。
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6.发明授权
公开(公告)号：US5168339A
公开(公告)日：1992-12-01
申请号：US688424
申请日：1991-04-22
CPC分类号： H01L35/12 , H01L35/14 , H01L35/16 , H01L35/32 , Y10S257/93
摘要： A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.
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公开(公告)号：US20050255315A1
公开(公告)日：2005-11-17
申请号：US10540231
申请日：2003-12-12
申请人： Shinsuke Yamanaka , Tsuyoshi Hamaguchi , Masayoshi Uno , Ken Kurosaki , Hiroaki Muta , Kouichi Kugimiya
发明人： Shinsuke Yamanaka , Tsuyoshi Hamaguchi , Masayoshi Uno , Ken Kurosaki , Hiroaki Muta , Kouichi Kugimiya
CPC分类号： C25D11/24 , B81B1/00 , Y10T428/29
摘要： The present invention provides a method of preparing directly a desired nano-structure of oxide without electrolyzing the target oxide, a nano-structure having structural resistance and various useful uses of the nano-structure. Into a solution containing a fluoride complex ion comprising metal element of the target oxide in which the metal is at least one selected from the group consisting of transition metal elements, group IA elements, group IIA elements, group IIIB elements, group IVB elements, group VB elements and group VIB elements, a template having nano-structure made from oxide is immersed, and the reaction condition is adjusted to substitute oxide of the template with the target oxide.
摘要翻译： 本发明提供一种在不电解目标氧化物的情况下直接制备所需的氧化物纳米结构的方法，具有结构电阻的纳米结构和纳米结构的各种有用用途的方法。 在含有氟化物配合物离子的溶液中，所述氟化物配合物离子包含目标氧化物的金属元素，其中金属为选自过渡金属元素，IA族元素，IIA族元素，IIIB族元素，IVB族元素， 浸渍具有由氧化物制成的纳米结构的VIB元件和VIB族元素，调整反应条件以用靶氧化物代替模板的氧化物。
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8.再颁专利
公开(公告)号：USRE35441E
公开(公告)日：1997-02-04
申请号：US330565
申请日：1994-10-28
CPC分类号： H01L35/12 , H01L35/14 , H01L35/16 , H01L35/32 , Y10S257/93
摘要： A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.
摘要翻译： 公开了一种具有多孔结构的热电半导体器件和将其保持在脱气状态的气密密封结构。 还公开了一种制冷面板，其包括多个p型和n型半导体元件，每个p型和n型半导体元件具有上述结构，其中元件被交替地和电串联连接。
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9.发明授权Bi, alkaline earth, Cu extruded oxide superconductive material having a C-plane orientation greater than 80% 失效BI，碱性土，Cu超导氧化物超导材料，具有超过80％的C-PLANE方位，
公开(公告)号：US5079215A
公开(公告)日：1992-01-07
申请号：US569370
申请日：1990-08-14
IPC分类号： C04B35/00 , C01G1/00 , C01G3/00 , C01G3/02 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
CPC分类号： C04B35/4521 , H01L39/126 , H01L39/2419 , H01L39/248 , Y10S505/739 , Y10S505/782
摘要： An oxide superconductive material comprising constituent elements mainly composed of ABiCuO in which A comprises at least one element of alkaline earth metals, and having a C-plane orientation, and a method of orienting such superconductive materials by hot extrusion from a rectangular nozzle.
摘要翻译： 包含主要由ABiCuO组成的构成元素的氧化物超导材料，其中A包含至少一种碱土金属元素并具有C面取向，以及通过从矩形喷嘴热挤压定向这种超导材料的方法。
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