METHOD OF FABRICATING SEMICONDUCTOR OXIDE NANOFIBERS FOR SENSOR AND GAS SENSOR USING THE SAME
    2.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR OXIDE NANOFIBERS FOR SENSOR AND GAS SENSOR USING THE SAME 审中-公开
    使用该传感器和气体传感器制造半导体氧化物纳米纤维的方法

    公开(公告)号:US20100155691A1

    公开(公告)日:2010-06-24

    申请号:US12536664

    申请日:2009-08-06

    IPC分类号: H01L29/66 H01L21/36

    摘要: A gas sensor for detecting environmentally harmful gases is provided. The sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a sensing layer formed on the metal electrode and including a semiconductor oxide (Lan+1NinO3n+1(n=1,2,3)) nanofiber. Therefore, a semiconductor oxide (Lan+1NinO3n+1(n=1,2,3)) has an ABO3-type basic crystalline structure and thus is stable in structure, and is a representative material having a nonstoichiometric composition due to oxygen defects. Since the semiconductor oxide has great oxygen defects on its surface, a great change in electrical resistance may be exhibited due to reactive gas adsorption and oxidation/reduction reaction on the oxide surface. Also, a method of fabricating the gas sensor is provided.

    摘要翻译: 提供了一种用于检测环境有害气体的气体传感器。 传感器包括绝缘基板,形成在绝缘基板上的金属电极和形成在金属电极上的包含半导体氧化物(Lan + 1NinO3n + 1(n = 1,2,3))纳米纤维的感测层。 因此,半导体氧化物(Lan + 1NinO3n + 1(n = 1,2,3))具有ABO 3型碱性结晶结构,因此结构稳定,是由于氧缺陷而具有非化学计量组成的代表性材料。 由于半导体氧化物在其表面上具有大的氧缺陷,所以由于氧化物表面上的反应性气体吸附和氧化/还原反应,可能会发生很大的电阻变化。 另外,提供了一种制造气体传感器的方法。