摘要:
An apparatus for generating an electron beam is disclosed to reduce emittance of an electron beam. The apparatus includes: a housing including a rear portion where an electron beam is generated, a front portion having an electron beam discharge hole for discharging the electron beam to the exterior, and a side portion connecting the rear portion and the front portion, the side portion having a first hole and an opposite side portion, facing the first hole, having a second hole in order to reduce asymmetry of an electric field caused by the first hole; and a waveguide installed on the side portion to supply an electromagnetic wave to the interior of the housing through the first hole, wherein the electron beam is generated by laser incident to the interior of the housing and accelerated by the electromagnetic wave supplied to the interior of the housing.
摘要:
An apparatus for generating an electron beam is disclosed to reduce emittance of an electron beam. The apparatus includes: a housing including a rear portion where an electron beam is generated, a front portion having an electron beam discharge hole for discharging the electron beam to the exterior, and a side portion connecting the rear portion and the front portion, the side portion having a first hole and an opposite side portion, facing the first hole, having a second hole in order to reduce asymmetry of an electric field caused by the first hole; and a waveguide installed on the side portion to supply an electromagnetic wave to the interior of the housing through the first hole, wherein the electron beam is generated by laser incident to the interior of the housing and accelerated by the electromagnetic wave supplied to the interior of the housing.
摘要:
An apparatus and method for generating femtosecond electron beam are disclosed. The apparatus for generating electron beam by discharging an electron generated via a cathode to an anode includes a transmission window provided at one side of the cathode to allow incident laser to pass therethrough, a pinhole formed on the anode such that the pinhole corresponds to the position of the electron generated from the transmission window, and a focusing unit provided at one side of the cathode and generating an electric field to accelerate and at the same time concentrate the electron to the pinhole. Electrons are simultaneously concentrated and accelerated to the pinhole by an electric field generated by the focusing unit positioned at the cathode to generate femtosecond electron beam.
摘要:
An apparatus and method for generating femtosecond electron beam are disclosed. The apparatus for generating electron beam by discharging an electron generated via a cathode to an anode includes a transmission window provided at one side of the cathode to allow incident laser to pass therethrough, a pinhole formed on the anode such that the pinhole corresponds to the position of the electron generated from the transmission window, and a focusing unit provided at one side of the cathode and generating an electric field to accelerate and at the same time concentrate the electron to the pinhole. Electrons are simultaneously concentrated and accelerated to the pinhole by an electric field generated by the focusing unit positioned at the cathode to generate femtosecond electron beam.
摘要:
The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译:本发明涉及一种制备单晶硅锭的方法,以及由此产生的锭或晶片。 该方法包括控制(i)生长速度v,(ii)平均轴向温度梯度G 0 O 3,和(iii)晶体从凝固到约750℃的冷却速率。 ,以便形成具有第一轴向对称区域的区段,该第一轴向对称区域从该晶锭的侧表面径向向内延伸,其中硅自间隙是主要的固有点缺陷,以及第二轴向对称区域,其从第一 并朝向锭的中心轴线。 该方法的特征在于控制v,G 0和冷却速率以防止在第一区域中形成凝聚的固有点缺陷,同时进一步控制冷却速率以限制氧化物的形成 在对晶片进行氧化处理(其他适用于形成这样的故障的氧化处理)之后,在来自该段的晶片中引起堆垛层错。
摘要:
The recording medium has a data structure for managing reproduction of data recorded on the recording medium. A navigation area stores at least one navigation file, and the navigation file includes at least one navigation command group. At least one navigation command group includes at least one navigation command for managing reproduction of at least video data recorded on the recording medium.
摘要:
The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要:
The recording medium includes a data structure having at least first and second clip stream files and a playlist. The first clip stream file includes video data representing at least one still image, and the second clip stream file includes at least audio data. The playlist includes at least one playitem and at least one sub-playitem. The playitem indicates at least a portion of the first clip stream file to reproduce, and the sub-playitem indicates at least a portion of the second clip stream file to reproduce.
摘要:
The recording medium includes a data structure having a clip stream file and a clip information file associated with the clip stream file. The clip stream file includes at least video data for a still image, and the clip information file including at least an entry point map. The entry point map includes an entry point, and the entry point provides at least an address of the still image.
摘要:
The present invention relates to method and apparatus of recording graphic data constituting sub-pictures in a main video on a high-density recording medium such as a Blu-ray Disk ROM (BD-ROM) disk. In the present invention, when a plurality of graphic objects, namely, images are received, the plurality of graphic objects and their color control information are organized into a PES (Packetized Elementary Stream) packet and then recorded on a recording medium, wherein the color control information is used in common for screen display by the plurality of graphic objects.