摘要:
A channel layer of n-type GaAs doped with Si as an impurity is formed on a GaAs semiinsulating substrate. A gate electrode of, for example, aluminum is formed on the channel layer. The gate electrode is in Schottky-contact with channel layer. Formed on opposite sides of the gate electrode on the channel layer are drain- and source side electric field relaxation layers of n-type In.sub.x G.sub.1-x As doped with impurities. Each electric field relaxation layer substantially produces a potential difference at its lateral edge portion by an electric current flowing across the lateral edge portion. A WSi drain electrode is formed on the drain-side electric field relaxation layer. A WSi source electrode is formed on the source-side electric field relaxation layer.
摘要:
A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed with respect to the first resist film masked with the second resist film to transfer the pattern of the second resist film to the first resist film and thereby form a second opening in the first resist film. Subsequently, a third resist film of chemically amplified type is applied to the entire surface of the first resist film to form a mixing layer in conjunction with the first resist film. As a result, the wall faces of the second opening are covered with the mixing layer and the width of the second opening is thereby reduced.
摘要:
An information processing apparatus includes a data processing unit which generates content to be distributed to a client; and a communication unit which sends the content generated by the data processing unit, wherein the data processing unit combines a plurality of watermarking record blocks, each of which is obtained by embedding watermarking data into a block as section data of the content, generates content in which different watermarking data sequences are set in units of distribution processing with respect to the clients, and sends the generated content to the clients through the communication unit.
摘要:
The CPU 11 of the personal computer 1 controls the CPU 32 of the adaptor 26 made of a semiconductor ID to compute a hash value of a content-managing music data base recorded in the HDD 21 and store it into the nonvolatile memory 34. When playing back a content recorded in the HDD 21, the CPU 11 computes the hash value of the music data base recorded in the HDD 21, compares it with hash values stored cumulatively in the nonvolatile memory 34, and controls the playback of the content from the HDD 21 based on the result of the comparison.
摘要:
In order to obtain coded data which does not strike viewers and listeners as being incongruous, when plural audio data are to be coded, a coding program groups the respective audio data into one audio data, codes the grouped audio data in sequence with a predetermined number of samples being treated as units, and sets delimitations corresponding to the delimitations of the plural audio data in the coded data at coding units of the coded data.
摘要:
The CPU 11 of the personal computer 1 controls the CPU 32 of the adaptor 26 made of a semiconductor ID to compute a hash value of a content-managing music data base recorded in the HDD 21 and store it into the nonvolatile memory 34. When playing back a content recorded in the HDD 21, the CPU 11 computes the hash value of the music data base recorded in the HDD 21, compares it with hash values stored cumulatively in the nonvolatile memory 34, and controls the playback of the content from the HDD 21 based on the result of the comparison.
摘要:
An undoped In0.52Al0.48As buffer layer (thickness: 500 nm), an undoped In0.53Ga0.47As channel layer (thickness: 30 nm), an n-type delta doped layer for shortening the distance between the channel layer and a gate electrode and attaining a desired carrier density, an undoped In0.52Al0.48As Schottky layer, and an n-type In0.53Ga0.47As cap layer doped with Si (thickness: 50 nm) are formed in this order on the principal surface of an Fe-doped InP semi-insulating substrate. An n-type GaAs protective layer doped with Si (thickness: 7.5 nm) is formed between the cap layer and source/drain electrodes for protecting the cap layer.
摘要翻译:未掺杂的In0.52Al0.48As缓冲层(厚度:500nm),未掺杂的In0.53Ga0.47As沟道层(厚度:30nm),n型δ掺杂层,用于缩短沟道层和栅极之间的距离 电极并获得所需的载流子密度,掺杂有Si(厚度:50nm)的未掺杂的In0.52Al0.48As肖特基层和n型In 0.53 Ga 0.47 As覆盖层依次形成在 Fe掺杂InP半绝缘基板。 在盖层和源极/漏极之间形成掺杂有Si(厚度:7.5nm)的n型GaAs保护层,用于保护盖层。
摘要:
A splitter includes, in parallel between trunk terminals and branch terminals, a signal branching circuit that blocks distributed power and passes a PLC communication signal and a power branching circuit that blocks the communication signal and passes the distributed power. In the signal branching circuit, impedance viewed from the branch terminal side is matched with characteristic impedance of a power line and impedance viewed from the trunk terminal side is higher than impedance viewed from the branch terminal side, in the frequency band of the communication signal. In the power branching circuit, input/output impedance is set to be sufficiently higher than the impedance of the signal branching circuit viewed from the trunk terminal side, in the frequency band of the communication signal.
摘要:
A card management device includes: a card device configured to include a controller on which a cryptographic IP is mounted in advance; and an individual information writing device configured to allow the card device to be connected to the individual information writing device in such a way that the card device is capable of data transfer to the individual information writing device, individual information assigned to the card device in advance being set in the individual information writing device, the individual information writing device being capable of writing the individual information to the card device connected to the individual information writing device.
摘要:
A phase shifting device includes a signal source; a variable phase shifter; first and second doubling circuits; and a 90-degree phase comparator. An output from the signal source is connected to an input of the variable phase shifter and to an input of the second doubling circuit, an output from the variable phase shifter is connected to an input of the first doubling circuit, an output from the first doubling circuit serves as a first output signal, and an output from the second doubling circuit serves as a second output signal. The first output signal and the second output signal are inputted to the 90-degree phase comparator. The amount of phase shift rotation of the variable phase shifter is changed by a phase shift control signal outputted from the 90-degree phase comparator. By this, an exact 90-degree phase shift is obtained.