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    Semiconductor laser device which is capable of stably emitting short-wavelength laser light
    1.
    发明授权
    Semiconductor laser device which is capable of stably emitting short-wavelength laser light 有权
    能够稳定地发射短波长激光的半导体激光装置

    公开(公告)号：US07653099B2

    公开(公告)日：2010-01-26

    申请号：US11569683

    申请日：2005-06-02

    申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

    发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

    IPC分类号： H01S3/04 ,  H01L23/45

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

    摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.

    摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆体3,4中的通孔中，用于向半导体激光器芯片供电; 以及盖5，其具有透光激光并固定到杆3,4的光学窗口6以覆盖半导体激光器芯片1.在杆3,4之间和端子电极7之间，该器件包括绝缘玻璃8 ，当加热到不低于700℃且不超过850℃的温度时不释放氟化硅气体。

    Semiconductor Laser Device and Method for Fabricating Same
    2.
    发明申请
    Semiconductor Laser Device and Method for Fabricating Same 有权
    半导体激光器件及其制造方法

    公开(公告)号：US20080049800A1

    公开(公告)日：2008-02-28

    申请号：US11569683

    申请日：2005-06-02

    申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

    发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

    IPC分类号： H01S5/022 ,  G11B7/00 ,  H01L33/00

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

    摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.

    摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆体3,4中的通孔中，用于向半导体激光器芯片供电; 以及盖5，其具有透光激光并固定到杆3,4的光学窗口6以覆盖半导体激光器芯片1。 在杆3,4之间和端子电极7之间，该装置包括绝热玻璃8，当加热至不低于700℃且不超过850℃的温度时不会释放氟化硅气体。

    Nitride compound semiconductor element and method for manufacturing same
    6.
    发明授权
    Nitride compound semiconductor element and method for manufacturing same 有权
    氮化物半导体元件及其制造方法

    公开(公告)号：US08306085B2

    公开(公告)日：2012-11-06

    申请号：US13234326

    申请日：2011-09-16

    申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

    发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

    IPC分类号： H01S5/10

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2201 ,  Y10S148/028

    摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.

    摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。

    Nitride semiconductor light emitting element and nitride semiconductor light emitting device
    8.
    发明授权
    Nitride semiconductor light emitting element and nitride semiconductor light emitting device 有权
    氮化物半导体发光元件和氮化物半导体发光器件

    公开(公告)号：US07880192B2

    公开(公告)日：2011-02-01

    申请号：US12159786

    申请日：2006-12-27

    申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Toshiya Yokogawa

    发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Toshiya Yokogawa

    IPC分类号： H01L21/06

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/22

    摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.

    摘要翻译： 根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构 它们之间。 具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极32和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。