公开(公告)号：US07653099B2

公开(公告)日：2010-01-26

申请号：US11569683

申请日：2005-06-02

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

IPC分类号： H01S3/04 ,  H01L23/45

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.

摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆体3,4中的通孔中，用于向半导体激光器芯片供电; 以及盖5，其具有透光激光并固定到杆3,4的光学窗口6以覆盖半导体激光器芯片1.在杆3,4之间和端子电极7之间，该器件包括绝缘玻璃8 ，当加热到不低于700℃且不超过850℃的温度时不释放氟化硅气体。

公开(公告)号：US20080049800A1

公开(公告)日：2008-02-28

申请号：US11569683

申请日：2005-06-02

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

IPC分类号： H01S5/022 ,  G11B7/00 ,  H01L33/00

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.

摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆体3,4中的通孔中，用于向半导体激光器芯片供电; 以及盖5，其具有透光激光并固定到杆3,4的光学窗口6以覆盖半导体激光器芯片1。 在杆3,4之间和端子电极7之间，该装置包括绝热玻璃8，当加热至不低于700℃且不超过850℃的温度时不会释放氟化硅气体。

公开(公告)号：US20050116614A1

公开(公告)日：2005-06-02

申请号：US10993812

申请日：2004-11-19

申请人： Isao Kidoguch ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

发明人： Isao Kidoguch ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

IPC分类号： H01S5/022 ,  H05B33/00

CPC分类号： H01S5/02204 ,  H01S5/02212 ,  H01S5/02296

摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

摘要翻译： 本发明的光源包括：半导体发光器件，其具有发光面并从该发光面的一部分发射光; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。 吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

公开(公告)号：US20080315231A1

公开(公告)日：2008-12-25

申请号：US12137894

申请日：2008-06-12

申请人： Isao Kidoguchi ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

发明人： Isao Kidoguchi ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

IPC分类号： H01L33/00

CPC分类号： H01S5/02204 ,  H01S5/02212 ,  H01S5/02296

摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

摘要翻译： 本发明的光源包括：具有发光面并从发光面的一部分发光的半导体发光器件; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。 吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

公开(公告)号：US08018134B2

公开(公告)日：2011-09-13

申请号：US12137894

申请日：2008-06-12

申请人： Isao Kidoguchi ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

发明人： Isao Kidoguchi ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

IPC分类号： H01J1/62

CPC分类号： H01S5/02204 ,  H01S5/02212 ,  H01S5/02296

摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

摘要翻译： 本发明的光源包括：具有发光面并从发光面的一部分发光的半导体发光器件; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。 吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

公开(公告)号：US07407421B2

公开(公告)日：2008-08-05

申请号：US10993812

申请日：2004-11-19

申请人： Isao Kidoguchi ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

发明人： Isao Kidoguchi ,  Yasuo Kitaoka ,  Hiroyoshi Yajima ,  Keiji Ito ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Kiminori Mizuuchi

IPC分类号： H01J9/00 ,  H01L29/04

CPC分类号： H01S5/02204 ,  H01S5/02212 ,  H01S5/02296

摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

摘要翻译： 本发明的光源包括：具有发光面并从发光面的一部分发光的半导体发光器件; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。 吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

公开(公告)号：US08565861B2

公开(公告)日：2013-10-22

申请号：US12678390

申请日：2009-03-23

申请人： Kenji Taira ,  Hiroyoshi Yajima ,  Shinichi Takimoto

发明人： Kenji Taira ,  Hiroyoshi Yajima ,  Shinichi Takimoto

IPC分类号： A61B6/00

CPC分类号： G01J1/0407 ,  A61B1/04 ,  A61B1/043 ,  A61B1/07 ,  A61B5/0066 ,  A61B5/0068 ,  A61B5/0071 ,  A61B5/0073 ,  A61B5/0075 ,  A61B5/0077 ,  A61B5/0084 ,  A61B5/489 ,  A61B5/6852 ,  G01N21/4795 ,  G01N21/6458 ,  G01N21/65 ,  G01N2021/6484 ,  G01N2021/653 ,  G01N2021/655

摘要： An optical inspection device 1, comprising a light generation means 2, a light irradiation means 3 irradiating an object to be inspected 4 with light generated from the light generation means 2 and a photodetection means 6 photoelectrically converting signal light obtained from the object to be inspected 4 through irradiation of light by the light irradiation means 3, and inspecting the object to be inspected 4 based on output from the photodetection means 6, wherein a light amplification means 5 amplifying signal light obtained from the object to be inspected 4 is provided. There is thus provided an optical inspection device capable of photoelectrically converting signal light from the object to be inspected with high sensitivity and promptly with its inexpensive configuration without increasing the intensity of light with which the object to be inspected is irradiated and without using an expensive low-noise and high-sensitivity photodetector.

摘要翻译： 一种光学检查装置1，其包括光发生装置2，用从发光装置2产生的光照射被检查物体4的光照射装置3以及对从被检查物体获得的信号光进行光电转换的光检测装置6 通过光照射装置3照射光，并且根据来自光检测装置6的输出检查待检查对象4，其中提供放大从被检查对象4获得的信号光的光放大装置5。 因此，提供了一种光学检查装置，其能够以不昂贵的配置以高灵敏度和迅速的方式对来自被检查物体的信号光进行光电转换，而不增加被照射物体照射的光的强度，并且不使用昂贵的低 噪声和高灵敏度光电探测器。

公开(公告)号：US20100195193A1

公开(公告)日：2010-08-05

申请号：US12678391

申请日：2009-03-24

申请人： Kenji Taira ,  Hiroyoshi Yajima

发明人： Kenji Taira ,  Hiroyoshi Yajima

IPC分类号： H01S3/13

CPC分类号： H01S5/183 ,  H01S3/06758 ,  H01S3/10023 ,  H01S3/1003 ,  H01S3/1618 ,  H01S5/4006 ,  H01S2301/02

摘要： An optical pulse source device comprising an optical pulse source (10) emitting an optical pulse train, optical amplifying means (20, 40) amplifying the optical pulse train and a saturable absorber device (30) removing noise floor in the optical pulse train. There is provided an optical pulse source device for multiphoton imaging system being of small size and high stability and capable of improving the SNR by its relatively simple configuration without using a synchronous circuit or an active time gate.

摘要翻译： 一种光脉冲源装置，包括发射光脉冲串的光脉冲源（10），放大光脉冲串的光放大装置（20,40）和去除光脉冲列中的本底噪声的可饱和吸收装置（30）。 提供了具有小尺寸和高稳定性的多光子成像系统的光脉冲源装置，并且能够通过其相对简单的配置在不使用同步电路或活动时间栅极的情况下提高SNR。

公开(公告)号：US5018159A

公开(公告)日：1991-05-21

申请号：US440522

申请日：1989-11-22

申请人： Yoshihiro Suzuki ,  Hiroyoshi Yajima ,  Junichi Shimada ,  Kenji Shimoyama ,  Hideki Gotoh

发明人： Yoshihiro Suzuki ,  Hiroyoshi Yajima ,  Junichi Shimada ,  Kenji Shimoyama ,  Hideki Gotoh

IPC分类号： H01S5/00 ,  H01S5/042

CPC分类号： H01S5/0425

摘要： Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.

公开(公告)号：US08912508B2

公开(公告)日：2014-12-16

申请号：US12677952

申请日：2009-03-24

申请人： Hiroyoshi Yajima ,  Kenji Taira

发明人： Hiroyoshi Yajima ,  Kenji Taira

IPC分类号： G01N21/64 ,  G02B21/08

CPC分类号： G01N21/6458 ,  G01N2201/0697 ,  G02B21/082

摘要： A multiphoton-excited measuring device measuring a sample with the use of a multiphoton absorption phenomenon by optical pulses having high intensity, comprising a short pulse light source 2 emitting optical pulses; an irradiation optical system 17, 18, 19 irradiating a sample 20 with optical pulses emitted from the short pulse light source 2; a detector 24 detecting signal light generated, in association with multiphoton excitation, from the sample 20 by the irradiation with optical pulses; and an optical pulse compression means 4, 13 compressing a pulse width, with the use of intensity-dependent nonlinear effects of the optical fiber 4, so that a pulse width of optical pulses with which the sample 20 is to be irradiated is shorten to equal to or narrower than that of optical pulses emitted from the short pulse light source 2 and so that a spectral width of optical pulses with which the sample 20 is to be irradiated is wider than that of optical pulses emitted from the short pulse light source 2, which makes it possible to stably irradiate, with the use of easy-to-use short pulse light source, a sample with optical pulses having higher peak intensity and a shorter temporal width and measure the sample easily with high accuracy without requiring sophisticated laser techniques and skills.

摘要翻译： 多光子激发测量装置，通过具有高强度的光脉冲使用多光子吸收现象来测量样品，包括发射光脉冲的短脉冲光源2; 照射光学系统17,18,19用从短脉冲光源2发射的光脉冲照射样品20; 检测器24，通过用光脉冲的照射检测与样品20相关的多光子激发产生的信号光; 以及使用光纤4的强度相关非线性效应来压缩脉冲宽度的光脉冲压缩装置4,13，使得要照射样品20的光脉冲的脉冲宽度缩短到相等 比从短脉冲光源2发射的光脉冲的宽度窄或窄，使得样品20被照射的光脉冲的光谱宽度比从短脉冲光源2发射的光脉冲的光谱宽度宽， 这使得可以使用易于使用的短脉冲光源来稳定地照射具有较高峰值强度和较短时间宽度的光脉冲的样品，并且以高精度容易地测量样品，而不需要复杂的激光技术， 技能