公开(公告)号：US07712333B2

公开(公告)日：2010-05-11

申请号：US11391343

申请日：2006-03-29

申请人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

发明人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

IPC分类号： C03C17/02

CPC分类号： C03C17/02 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/002 ,  C03C17/36 ,  C03C17/3665 ,  G03F1/24

摘要： To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch.A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

摘要翻译： 提供一种用于平滑具有诸如凹坑或划痕的凹陷缺陷的玻璃基板的表面的方法。 一种用于使其上具有凹陷缺陷的玻璃基板的表面平滑的方法，包括：通过干法沉积法在具有凹陷缺陷的玻璃基板的表面上形成膜，所述膜包括具有流体点Tf的玻璃材料 150℃以上且不高于玻璃基板的应变点Ts（℃） 并且在不低于Tf且不高于Ts的温度下加热玻璃材料的膜以使膜处于玻璃材料的膜可以流动以便掩埋凹陷缺陷的状态，随后冷却膜 从而使具有凹陷缺陷的玻璃基板的表面光滑。

公开(公告)号：US20070240453A1

公开(公告)日：2007-10-18

申请号：US11391343

申请日：2006-03-29

申请人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

发明人： Toshiyuki Uno ,  Yoshiaki Ikuta ,  Mika Yokoyama ,  Ken Ebihara

IPC分类号： C03B23/00

CPC分类号： C03C17/02 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/002 ,  C03C17/36 ,  C03C17/3665 ,  G03F1/24

摘要： To provide a method for smoothing a surface of a glass substrate having a concave defect, such as a pit or a scratch. A method for smoothing a surface of a glass substrate having a concave defect thereon, comprising: forming a film on the surface of the glass substrate having the concave defect by a dry deposition method, the film comprising a glass material having a fluid point Tf of 150° C. or above and of not higher than a strain point Ts (° C.) of the glass substrate; and heating the film of the glass material at a temperature of not lower than Tf and not higher than Ts to put the film in such state that the film of the glass material can flow so as to bury the concave defect, followed by cooling the film of the glass material, thereby to smooth the surface of the glass substrate having the concave defect.

摘要翻译： 提供一种用于平滑具有诸如凹坑或划痕的凹陷缺陷的玻璃基板的表面的方法。 一种用于使其上具有凹陷缺陷的玻璃基板的表面平滑的方法，包括：通过干法沉积法在具有凹陷缺陷的玻璃基板的表面上形成膜，所述膜包括具有流体点Tf的玻璃材料 150℃以上且不高于玻璃基板的应变点Ts（℃） 并且在不低于Tf且不高于Ts的温度下加热玻璃材料的膜以使膜处于玻璃材料的膜可以流动以便掩埋凹陷缺陷的状态，随后冷却膜 从而使具有凹陷缺陷的玻璃基板的表面光滑。

公开(公告)号：US07678511B2

公开(公告)日：2010-03-16

申请号：US11330205

申请日：2006-01-12

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate.A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

摘要翻译： 提供了具有反射层和EUV掩模坯料的基板，其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面，或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板，其可用于制造用于EUV光刻的反射掩模板，包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层，夹持层用于卡盘并支撑基板， 静电卡盘，其中反射层与夹持层没有电连接。

公开(公告)号：US20070160916A1

公开(公告)日：2007-07-12

申请号：US11330205

申请日：2006-01-12

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： B32B9/00 ,  B32B17/06 ,  G03C5/00 ,  B32B17/10 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

摘要翻译： 提供了具有反射层和EUV掩模坯料的基板，其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面，或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板，其可用于制造用于EUV光刻的反射掩模板，包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层，夹持层用于卡盘并支撑基板， 静电卡盘，其中反射层与夹持层没有电连接。

公开(公告)号：US07960077B2

公开(公告)日：2011-06-14

申请号：US12694860

申请日：2010-01-27

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno ,  Ken Ebihara

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/40 ,  G03F7/70708 ,  G21K2201/067 ,  Y10T428/31616

摘要： A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.

摘要翻译： 一种用于EUV光刻的反射掩模板，包括具有前表面和后表面的基板，形成在基板的前表面上的反射层，形成在反射层上的吸收层，以及形成在反射层的后表面上的夹持层 基板并定位成将基板夹持到静电卡盘。 衬底具有不导电部分，其消除了反射层和夹持层之间的电传导以及吸收层和夹持层之间的电传导，并且非导电部分通过形成覆盖有一个衬底的衬底的一部分而形成 或更多的覆盖构件，并且防止反射层和吸收层的形成。

公开(公告)号：US07230695B2

公开(公告)日：2007-06-12

申请号：US10885641

申请日：2004-07-08

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno

IPC分类号： G01N21/00 ,  G03H3/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/24 ,  G03F1/72 ,  G03F1/84 ,  G03F7/70591 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A defect repair device includes a defect inspection unit configured to find a size of a protruding defect on a front surface of a multi-layer film having a rear surface opposite to the front surface, a calculation unit configured to calculate a repair energy so as to repair the protruding defect based on the size of the protruding defect found by the defect inspection unit, an energy supplier, and an energy controller configured to control the energy supplier to supply the repair energy calculated by the calculation unit to a portion in the multi-layer film from the rear surface of the multi-layer film so as to cause a decrease in a volume of the portion and retract the protruding defect into the multi-layer film.

摘要翻译： 缺陷修复装置包括：缺陷检查单元，被配置为在具有与前表面相对的后表面的多层膜的前表面上发现突出缺陷的尺寸;计算单元，被配置为计算修复能量，以便 基于由缺陷检查单元，能量供应器和能量控制器发现的突出缺陷的尺寸来修复突出缺陷，能量控制器被配置为控制能量供应商将由计算单元计算的修复能量提供给多维度的部分， 从多层膜的背面形成多层膜，使得该部分的体积减小并将突出缺陷缩回到多层膜中。

公开(公告)号：US20060007433A1

公开(公告)日：2006-01-12

申请号：US10885641

申请日：2004-07-08

申请人： Yoshiaki Ikuta ,  Toshiyuki Uno

发明人： Yoshiaki Ikuta ,  Toshiyuki Uno

IPC分类号： G01N21/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/24 ,  G03F1/72 ,  G03F1/84 ,  G03F7/70591 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A defect repair device includes a defect inspection unit configured to find a size of a protruding defect on a front surface of a multi-layer film having a rear surface opposite to the front surface, a calculation unit configured to calculate a repair energy so as to repair the protruding defect based on the size of the protruding defect found by the defect inspection unit, an energy supplier, and an energy controller configured to control the energy supplier to supply the repair energy calculated by the calculation unit to a portion in the multi-layer film from the rear surface of the multi-layer film so as to cause a decrease in a volume of the portion and retract the protruding defect into the multi-layer film.

摘要翻译： 缺陷修复装置包括：缺陷检查单元，被配置为在具有与前表面相对的后表面的多层膜的前表面上发现突出缺陷的尺寸;计算单元，被配置为计算修复能量，以便 基于由缺陷检查单元，能量供应器和能量控制器发现的突出缺陷的尺寸来修复突出缺陷，能量控制器被配置为控制能量供应商将由计算单元计算的修复能量提供给多维度的部分， 从多层膜的背面形成多层膜，使得该部分的体积减小并将突出缺陷缩回到多层膜中。

公开(公告)号：US08241821B2

公开(公告)日：2012-08-14

申请号：US13038429

申请日：2011-03-02

申请人： Yoshiaki Ikuta

发明人： Yoshiaki Ikuta

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/70

摘要： Provision of an EUV mask whereby influence of EUV reflected light from an absorber film surface in the peripheral portion of a mask pattern region is suppressed at a time of carrying out EUV lithography; an EUV mask blank to be employed for producing the above EUV mask; and a process for producing the EUV mask blank. A process for producing a reflective mask blank for EUV lithography (EUVL), comprising alternately laminating a high refractive index film and a low refractive index film on a substrate to form a multilayer reflective film for reflecting EUV light and forming an absorber layer for absorbing EUV light on the multilayer reflective film, wherein the process further comprises after formation of the above multilayer reflective film, heating a portion of a surface of the multilayer reflective film outside a portion to be a mask pattern region in a reflective mask for EUV lithography produced by employing the reflective mask blank for EUV, to reduce the reflectivity of the heated portion of the surface of the multilayer reflective film for EUV light.

摘要翻译： 在进行EUV光刻时，提供EUV掩模，从而在掩模图案区域的周边部分中抑制来自吸收膜表面的EUV反射光的影响; 用于产生上述EUV掩模的EUV掩模空白; 以及生产EUV掩模空白的方法。 一种用于制造用于EUV光刻（EUVL）的反射掩模板的方法，包括在基板上交替层叠高折射率膜和低折射率膜以形成用于反射EUV光的多层反射膜并形成用于吸收EUV的吸收层 在多层反射膜上的光，其中该方法进一步包括在形成上述多层反射膜之后，将多层反射膜的表面的一部分在作为掩模图案区域的部分外部加热到用于EUV光刻的反射掩模中，所述反射掩模由 使用EUV的反射掩模板来降低EUV光的多层反射膜的表面的加热部分的反射率。

公开(公告)号：US20120196208A1

公开(公告)日：2012-08-02

申请号：US13443108

申请日：2012-04-10

申请人： Masaki MIKAMI ,  Mitsuhiko Komakine ,  Yoshiaki Ikuta

发明人： Masaki MIKAMI ,  Mitsuhiko Komakine ,  Yoshiaki Ikuta

IPC分类号： G03F7/20 ,  G03F1/52

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0891 ,  G03F7/70316 ,  G03F7/70958 ,  G03F7/70983

摘要： Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.

摘要翻译： 提供一种用于EUVL的多层反射镜，其中防止了由Ru保护层的氧化引起的反射率的劣化，以及其制备方法。 一种用于EUV光刻的多层反射镜，其包括基板，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在基板上，其中反射层为Mo / Si多层反射膜， 保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5〜25原子％的氮和75〜99.5原子％的Si的中间层。

公开(公告)号：US07527695B2

公开(公告)日：2009-05-05

申请号：US11471505

申请日：2006-06-21

申请人： Yoshiaki Ikuta

发明人： Yoshiaki Ikuta

IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00

CPC分类号： H01L21/67028 ,  H01L21/67115

摘要： To provide a method and apparatus for cleaning a substrate to effectively remove an organic type or metallic type contaminant from a to-be-cleaned surface of a substrate by an increase in the intensity of UV light at the to-be-cleaned surface of the substrate and by an increase in the concentration of ozone O3, excited state oxygen atoms O(1D) and active oxygen.A method for cleaning a substrate by means of irradiation with UV light, wherein a second space containing a surface on the side of the substrate on which the cleaning is to be carried out (hereinafter referred to as the to-be-cleaned surface) and its vicinity, is an atmosphere comprising a gas or a liquid which generates at least one of ozone, excited state oxygen atoms and active oxygen species by the irradiation with the UV light, a first space containing a surface on the other side of the substrate (hereinafter referred to as the to-be-irradiated surface) is an atmosphere comprising a gas showing a low absorption of the UV light, and the UV light is permitted to enter via the first space into the to-be-irradiated surface of the substrate, then pass through the interior of the substrate and then be applied to the to-be-cleaned surface.

摘要翻译： 为了提供一种用于清洁基底的方法和装置，以通过增加待清洁的表面上的UV光的强度来有效地从基底的待清洁表面去除有机类型或金属型污染物 底物和臭氧O3浓度增加，激发态氧原子O（1D）和活性氧。 一种通过紫外线照射来清洗基板的方法，其中包含要在其上进行清洁的基板的一侧上的表面的第二空间（以下称为待清洁表面）和 其附近是包含通过照射紫外光而产生臭氧，激发态氧原子和活性氧中的至少一种的气体或液体的气氛，包含基板另一侧的表面的第一空间（ 以下称为待照射面）是包含显示紫外光吸收低的气体的气氛，并且允许UV光经由第一空间进入基板的被照射表面 ，然后通过基板的内部，然后施加到待清洁的表面。