公开(公告)号：US07372760B2

公开(公告)日：2008-05-13

申请号：US11207935

申请日：2005-08-22

申请人： Yoshiaki Nagatomi ,  Kenichi Kawabata ,  Norihiro Nakatsuhama ,  Tetsuya Yoshida ,  Naoya Watanabe ,  Tomohiro Wada ,  Tomohide Yamamoto

发明人： Yoshiaki Nagatomi ,  Kenichi Kawabata ,  Norihiro Nakatsuhama ,  Tetsuya Yoshida ,  Naoya Watanabe ,  Tomohiro Wada ,  Tomohide Yamamoto

IPC分类号： G11C5/14

CPC分类号： G11C29/46 ,  G11C29/1201

摘要： A semiconductor device includes a first power supply terminal, a second power supply terminal, a comparison circuit coupled to the first power supply terminal and the second power supply terminal to produce at an output node thereof a signal responsive to a difference between a potential of the first power supply terminal and a potential of the second power supply terminal, and a core circuit coupled to the output node of the comparison circuit to perform a test operation in response to the signal.

摘要翻译： 半导体器件包括第一电源端子，第二电源端子，耦合到第一电源端子和第二电源端子的比较电路，以在其输出节点处产生响应于电位 第一电源端子和第二电源端子的电位，以及耦合到比较电路的输出节点的核心电路，以响应于该信号执行测试操作。

公开(公告)号：US20060268636A1

公开(公告)日：2006-11-30

申请号：US11207935

申请日：2005-08-22

申请人： Yoshiaki Nagatomi ,  Kenichi Kawabata ,  Norihiro Nakatsuhama ,  Tetsuya Yoshida ,  Naoya Watanabe ,  Tomohiro Wada ,  Tomohide Yamamoto

发明人： Yoshiaki Nagatomi ,  Kenichi Kawabata ,  Norihiro Nakatsuhama ,  Tetsuya Yoshida ,  Naoya Watanabe ,  Tomohiro Wada ,  Tomohide Yamamoto

IPC分类号： G11C29/00

CPC分类号： G11C29/46 ,  G11C29/1201

摘要： A semiconductor device includes a first power supply terminal, a second power supply terminal, a comparison circuit coupled to the first power supply terminal and the second power supply terminal to produce at an output node thereof a signal responsive to a difference between a potential of the first power supply terminal and a potential of the second power supply terminal, and a core circuit coupled to the output node of the comparison circuit to perform a test operation in response to the signal.

摘要翻译： 半导体器件包括第一电源端子，第二电源端子，耦合到第一电源端子和第二电源端子的比较电路，以在其输出节点处产生响应于电位 第一电源端子和第二电源端子的电位，以及耦合到比较电路的输出节点的核心电路，以响应于该信号执行测试操作。

公开(公告)号：US20080286914A1

公开(公告)日：2008-11-20

申请号：US12151474

申请日：2008-05-07

申请人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

发明人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC分类号： H01L21/336

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

摘要翻译： 能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为 相对较小，以便抑制光漏电流。 晶粒尺寸越小，晶体缺陷就越大。 通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。 另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。 晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。 这是因为由于像素的扫描和图像信号的采样，外围晶体管需要比像素晶体管更高的速度操作。

公开(公告)号：US06583828B1

公开(公告)日：2003-06-24

申请号：US09641821

申请日：2000-08-21

申请人： Tomohiro Wada ,  Takusei Sato ,  Fumiaki Abe

发明人： Tomohiro Wada ,  Takusei Sato ,  Fumiaki Abe

IPC分类号： G02F11336

CPC分类号： G02F1/136213

摘要： A liquid crystal display device having a thin-film transistor formed on a substrate for driving an pixel electrode comprises a holding capacitor line underlying a thin-film semiconductor layer which forms the thin-film transistor, and a first holding capacitor dielectric film formed between the holding capacitor line and the thin-film semiconductor layer, a first holding capacitor element being made up of the thin-film semiconductor layer and the holding capacitor line interposing the first holding capacitor dielectric film therebetween. And a manufacturing method of above liquid crystal display device comprises the steps of forming the holding capacitor line on said substrate, forming the first holding capacitor dielectric film on the holding capacitor line, forming the thin-film semiconductor layer constituting the thin film transistor on the first holding capacitor dielectric film so that the holding capacitor line and the thin-film semiconductor layer interposing the first holding capacitor dielectric film therebetween make up the first holding capacitor element.

摘要翻译： 具有形成在用于驱动像素电极的基板上的薄膜晶体管的液晶显示装置包括在形成薄膜晶体管的薄膜半导体层下面的保持电容器线，以及形成在第一保持电容器电介质膜之间的第一保持电容器电介质膜 保持电容器线和薄膜半导体层，第一保持电容器元件由薄膜半导体层和保持电容线组成，其间插入第一保持电容器电介质膜。 上述液晶显示装置的制造方法包括以下步骤：在所述基板上形成保持电容配线，在保持电容配线上形成第一保持电容电介质膜，将构成薄膜晶体管的薄膜半导体层 首先保持电容器电介质膜，使得夹持电容器线和插入其中的第一保持电容器电介质膜的薄膜半导体层构成第一保持电容器元件。

公开(公告)号：US4912453A

公开(公告)日：1990-03-27

申请号：US051473

申请日：1987-05-18

申请人： Junichi Aizawa ,  Satoru Yamauchi ,  Shoichiro Kumazawa ,  Natsuki Hashiba ,  Tomohiro Wada

发明人： Junichi Aizawa ,  Satoru Yamauchi ,  Shoichiro Kumazawa ,  Natsuki Hashiba ,  Tomohiro Wada

IPC分类号： B23K11/00 ,  B23K11/14 ,  G10K1/063 ,  G10K1/064

CPC分类号： G10K1/063 ,  B23K11/002 ,  B23K11/14 ,  G10K1/0645

摘要： A miniaturized electromagnetic bell unit suitable for use with an alarm clock and the like is provided.The bell unit of the present invention is characterized in that it is miniaturized in such a way that a yoke to which a coil and a bell hammer are attached is incorporated within a bell and the bell is fixed to the yoke. Besides the simplicity of its structure, the advantages of the present invention are that the bell hammer can be adjusted in a simple manner through a hole drilled in the bottom of the bell; both the bell and the yoke are held fixed together simply and firmly such that a positioner is inserted into holes drilled correspondingly through the bell and the yoke while at the same time, an arm integrally extending from the yoke is fixed to a fixing member; and further, another hole is drilled in the bottom of the bell and one of two electrodes is inserted into the bell through the hole while the other electrode is brought into contact with the outer surface of the bell whereby the yoke and the bell are spot-welded to each other simply and securely.

摘要翻译： 提供适用于闹钟等的小型电磁铃单元。 本发明的钟形单元的特征在于，其小型化，使得将安装有线圈和钟形锤的轭结合在钟形件内，并将钟形件固定在轭架上。 除了其结构的简单之外，本发明的优点是可以通过在钟底部钻出的孔以简单的方式调节钟锤; 钟和轭被简单牢固地固定在一起，使得定位器插入相应地通过钟形和轭状钻孔的孔中，同时从轭固定延伸的臂固定到固定构件上; 此外，在钟的底部钻出另一个孔，并且两个电极中的一个通过孔插入到钟形件中，而另一个电极与钟形件的外表面接触，由此轭和钟是点状的， 彼此焊接牢固。

公开(公告)号：US07407840B2

公开(公告)日：2008-08-05

申请号：US11207347

申请日：2005-08-19

申请人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

发明人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC分类号： H01L21/00

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

公开(公告)号：US07189993B2

公开(公告)日：2007-03-13

申请号：US10485790

申请日：2003-06-06

申请人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

发明人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC分类号： H01L31/00

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

摘要翻译： 能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为 相对较小，以便抑制光漏电流。 晶粒尺寸越小，晶体缺陷就越大。 通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。 另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。 晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。 这是因为由像素的扫描和图像信号的采样所造成的外围晶体管比像素晶体管要高。

公开(公告)号：US08071015B2

公开(公告)日：2011-12-06

申请号：US12405367

申请日：2009-03-17

申请人： Tomohiro Wada ,  Tomoyuki Haneji ,  Shinichi Takahashi ,  Kiichi Kanda ,  Kenichi Watanabe

发明人： Tomohiro Wada ,  Tomoyuki Haneji ,  Shinichi Takahashi ,  Kiichi Kanda ,  Kenichi Watanabe

IPC分类号： B22F3/11

CPC分类号： B22F3/1137 ,  B22F3/1021 ,  B22F2999/00 ,  B22F2201/04 ,  B22F2201/10 ,  B22F2201/20 ,  B22F2201/013

摘要： Disclosed is a process of producing a porous metal body containing a metal component which is likely to be oxidized, by which process the amounts of residual carbon and residual oxygen therein are decreased, and by which the performance of the product porous body can be largely promoted. The process for producing a porous metal body by sintering a material of the porous metal body, which material is obtained by coating a slurry containing a metal powder and an organic binder on an organic porous aggregate, comprises a defatting step of treating the material of the porous metal body at a temperature not higher than 650° C. in an atmosphere containing carbon monoxide and carbon dioxide; a decarbonization step of treating the material of the porous metal body after the defatting step in an inert atmosphere or vacuum atmosphere at a temperature not higher than sintering temperature; and a sintering step of retaining the material of the porous metal body after the decarbonization step in an inert atmosphere, vacuum atmosphere, hydrogen atmosphere, or in a reducing atmosphere containing hydrogen gas and an inert gas at a temperature not higher than the melting point of the metal powder.

摘要翻译： 公开了一种生产含有可能被氧化的金属成分的多孔金属体的方法，通过该方法可以减少残留碳和残余氧的量，从而可以大大促进产物多孔体的性能 。 通过烧结多孔金属体的材料来制造多孔金属体的方法，该材料通过将含有金属粉末和有机粘合剂的浆料涂覆在有机多孔聚集体上而获得，该方法包括：脱脂步骤， 在含有一氧化碳和二氧化碳的气氛中，不高于650℃的多孔金属体; 在惰性气氛或真空气氛中，在不高于烧结温度的温度下，在脱脂步骤之后处理多孔金属体的材料的脱碳步骤; 在惰性气氛，真空气氛，氢气氛或含有氢气和惰性气体的还原气氛中，在不高于熔点的温度的温度下，将脱碳后的多孔金属体的材料保持在 金属粉末。

公开(公告)号：US07041273B2

公开(公告)日：2006-05-09

申请号：US10440119

申请日：2003-05-19

申请人： Tomohiro Wada ,  Hiroshi Kubo ,  Hidetoshi Ohta

发明人： Tomohiro Wada ,  Hiroshi Kubo ,  Hidetoshi Ohta

IPC分类号： C01B3/26 ,  B01J10/00 ,  B01J8/04

CPC分类号： C01B3/384 ,  B01J2219/00006 ,  C01B2203/0238 ,  C01B2203/0261 ,  C01B2203/0495 ,  C01B2203/1276 ,  C01B2203/142 ,  C23C8/20 ,  Y02P20/52

摘要： An apparatus and method of generating a carburizing atmosphere stably generate a reformed gas containing carbon monoxide of high concentration that is suitably used as a carburizing atmosphere. A first reforming furnace and a second reforming furnace are connected in series. A first cooler that removes moisture in an intermediate reformed gas from the first reforming furnace and a hydrocarbon adding section that adds hydrocarbon to the intermediate reformed gas are disposed between the first and second reforming furnaces. A raw material mixed gas with a low mixture ratio of hydrocarbon is introduced into the first reforming furnace to cause a catalytic reaction, thereby generating the intermediate reformed gas. Moisture contained in the intermediate reformed gas is removed. Hydrocarbon is added to the intermediate reformed gas. The intermediate reformed gas is introduced into the second reforming furnace to cause a catalytic reaction, to generate a carburizing atmosphere.

摘要翻译： 产生渗碳气氛的装置和方法稳定地产生适合用作渗碳气氛的含有高浓度一氧化碳的重整气体。 第一重整炉和第二重整炉串联连接。 从第一重整炉中除去中间重整气体中的水分的第一冷却器和向中间重整气体中添加烃的烃添加部分设置在第一和第二重整炉之间。 将具有低烃混合比的原料混合气体引入第一重整炉中以引起催化反应，从而产生中间重整气体。 除去中间重整气体中含有的水分。 将碳氢化合物加入到中间重整气体中。 将中间重整气体引入第二重整炉中以引起催化反应，产生渗碳气氛。

公开(公告)号：US20060033103A1

公开(公告)日：2006-02-16

申请号：US11251430

申请日：2005-10-14

申请人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

发明人： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC分类号： H01L29/04

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.