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公开(公告)号：US20090261414A1
公开(公告)日：2009-10-22
申请号：US12423563
申请日：2009-04-14
IPC分类号： H01L29/786 , H01L21/768 , H01L21/56
CPC分类号： H01L27/1266 , H01L21/568 , H01L23/3107 , H01L23/3114 , H01L27/1214 , H01L29/78606 , H01L29/78666 , H01L29/78669 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.
摘要翻译： 本发明的目的是通过降低膜的剥离度来提高半导体器件的耐水性和可靠性。 在半导体装置中，将第一无机绝缘层，半导体元件层，第二无机绝缘层，有机绝缘层和第三无机绝缘层依次层叠在基板上。 第二无机绝缘层在设置在半导体元件层中的开口部分与第一无机绝缘层接触。 第三无机绝缘层在设置在有机绝缘层中的开口部分与第二无机绝缘层接触。 在第二无机绝缘层和第三无机绝缘层相互接触的区域中，第二无机绝缘层具有多个不规则或开口。
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公开(公告)号：US09006051B2
公开(公告)日：2015-04-14
申请号：US12423563
申请日：2009-04-14
IPC分类号： H01L21/56 , H01L21/336 , H01L27/12 , H01L23/31
CPC分类号： H01L27/1266 , H01L21/568 , H01L23/3107 , H01L23/3114 , H01L27/1214 , H01L29/78606 , H01L29/78666 , H01L29/78669 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.
摘要翻译： 本发明的目的是通过降低膜的剥离度来提高半导体器件的耐水性和可靠性。 在半导体装置中，将第一无机绝缘层，半导体元件层，第二无机绝缘层，有机绝缘层和第三无机绝缘层依次层叠在基板上。 第二无机绝缘层在设置在半导体元件层中的开口部分与第一无机绝缘层接触。 第三无机绝缘层在设置在有机绝缘层中的开口部分与第二无机绝缘层接触。 在第二无机绝缘层和第三无机绝缘层相互接触的区域中，第二无机绝缘层具有多个不规则或开口。
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公开(公告)号：US07821005B2
公开(公告)日：2010-10-26
申请号：US11404923
申请日：2006-04-17
IPC分类号： H01L29/10 , H01L29/76 , H01L31/112
CPC分类号： H01L29/78621 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/1255 , H01L27/1277 , H01L29/66757 , H01L29/78633 , H01L29/78645 , Y10S257/913
摘要： Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
摘要翻译： 通过离子掺杂法将磷注入到结晶半导体膜中。 然而，吸杂所需的磷的浓度为1×10 10 / cm 3以上，这阻碍后续退火的再结晶，因此成为问题。 此外，当以高浓度添加磷时，掺杂所需的处理时间增加，并且掺杂步骤中的生产量降低，因此这成为问题。 本发明的特征在于，在具有晶体结构的半导体膜中形成杂质区域，其中添加了属于元素周期表第18族的元素，并且在杂质区域中分离出包含在半导体膜中的金属元素的吸杂剂 通过热处理进行。 此外，杂质区域中也可以含有一种导电型杂质。
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公开(公告)号：US07538011B2
公开(公告)日：2009-05-26
申请号：US11882907
申请日：2007-08-07
申请人： Shunpei Yamazaki , Osama Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osama Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L21/322
CPC分类号： H01L29/66757 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/78621 , H01L29/78624 , H01L29/78675 , H01L29/78678
摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.
摘要翻译： 目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加 在制造半导体器件的方法中的吞吐量。 通过本发明，在具有结晶结构的第一半导体膜上形成有阻挡层，第二半导体膜和含有贵重（稀有）气体元素的第三半导体膜。 进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。 然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。
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公开(公告)号：US07534670B2
公开(公告)日：2009-05-19
申请号：US11148288
申请日：2005-06-09
IPC分类号： H01L21/337
CPC分类号： H01L29/78675 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/32 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78663
摘要： Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a semiconductor film having an amorphous structure, gettering is completed by forming a region or a semiconductor film, to which a rare gas element is added, and by having the catalytic element move to the formed region or semiconductor film.
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公开(公告)号：US07306982B2
公开(公告)日：2007-12-11
申请号：US10940821
申请日：2004-09-15
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L29/78678
摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.
摘要翻译： 旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。 在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108） 具有晶体结构。 进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107） ）。 之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。
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公开(公告)号：US07115453B2
公开(公告)日：2006-10-03
申请号：US10056055
申请日：2002-01-28
CPC分类号： H01L29/78675 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/32 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78663
摘要： Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a semiconductor film having an amorphous structure, gettering is completed by forming a region or a semiconductor film, to which a rare gas element is added, and by having the catalytic element move to the formed region or semiconductor film.
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8.发明授权Method of manufacturing semiconductor device that includes selectively adding a noble gas element 失效包括选择性地添加惰性气体元件的半导体器件的制造方法公开(公告)号：US07045444B2
公开(公告)日：2006-05-16
申请号：US10020961
申请日：2001-12-19
IPC分类号： H01L21/322
CPC分类号： H01L29/78621 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/1255 , H01L27/1277 , H01L29/66757 , H01L29/78633 , H01L29/78645 , Y10S257/913
摘要： Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
摘要翻译： 通过离子掺杂法将磷注入到结晶半导体膜中。 然而，吸杂所需的磷的浓度为1×10 20 / cm 3以上，这阻碍了后续退火的再结晶，因此成为问题。 此外，当以高浓度添加磷时，掺杂所需的处理时间增加，并且掺杂步骤中的生产量降低，因此这成为问题。 本发明的特征在于，在具有晶体结构的半导体膜中形成杂质区域，其中添加了属于元素周期表第18族的元素，并且在杂质区域中分离出包含在半导体膜中的金属元素的吸杂剂 通过热处理进行。 此外，杂质区域中也可以含有一种导电型杂质。
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公开(公告)号：US06808968B2
公开(公告)日：2004-10-26
申请号：US10074050
申请日：2002-02-14
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L29/78678
摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.
摘要翻译： 旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。 在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108） 具有晶体结构。 进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107） ）。 之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。
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公开(公告)号：US07605029B2
公开(公告)日：2009-10-20
申请号：US11410274
申请日：2006-04-25
申请人： Osamu Nakamura , Shunpei Yamazaki , Koji Dairiki , Masayuki Kajiwara , Junichi Koezuka , Satoshi Murakami
发明人： Osamu Nakamura , Shunpei Yamazaki , Koji Dairiki , Masayuki Kajiwara , Junichi Koezuka , Satoshi Murakami
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L21/3226 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78633 , H01L29/78645 , H01L29/78675
摘要： According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H2, O, O2, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.
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