摘要:
An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer as that of the gate-lines; an interlayer insulation film formed above the semiconductor layer; and a source electrode and a drain electrode existing in the same layer as that of the signal-lines. Each capacitor has: a storage electrode of the same layer as that of the gate-lines; an insulation film formed on the storage electrode and being in contact therewith; and an electrode formed on the insulation film and being in contact therewith and existing in the same layer as that of the signal-lines.
摘要:
An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer as that of the gate-lines; an interlayer insulation film formed above the semiconductor layer; and a source electrode and a drain electrode existing in the same layer as that of the signal-lines. Each capacitor has: a storage electrode of the same layer as that of the gate-lines; an insulation film formed on the storage electrode and being in contact therewith; and an electrode formed on the insulation film and being in contact therewith and existing in the same layer as that of the signal-lines.
摘要:
An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer as that of the gate-lines; an interlayer insulation film formed above the semiconductor layer; and a source electrode and a drain electrode existing in the same layer as that of the signal-lines. Each capacitor has: a storage electrode of the same layer as that of the gate-lines; an insulation film formed on the storage electrode and being in contact therewith; and an electrode formed on the insulation film and being in contact therewith and existing in the same layer as that of the signal-lines.
摘要:
The present invention provides an image display unit and a method for manufacturing the same, in which the number of photolithographic processes can be reduced in the manufacture of an active substrate, and the manufacturing cost can be decreased. In a bottom gate type TFT substrate, a transparent conductive film 16 in the same layer as a pixel electrode 3 is used as a bottom layer, said pixel electrode 3 having said gate electrode 4 on main surface of an insulating substrate 1, and a laminated electrode film with a metal film 26 superimposed on a top layer thereof, and said pixel electrode 3 is used as the transparent conductive film 16.
摘要:
An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要:
An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.
摘要:
The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要:
An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要:
A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要:
Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.