公开(公告)号：US20130011945A1

公开(公告)日：2013-01-10

申请号：US13618083

申请日：2012-09-14

申请人： Isao SUZUMURA ,  Yoshiaki Toyota

发明人： Isao SUZUMURA ,  Yoshiaki Toyota

IPC分类号： H01L33/48

CPC分类号： H01L27/14643 ,  G09G3/20 ,  H01L27/1214 ,  H01L27/14692

摘要： An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.

摘要翻译： 具有多个感光装置的图像显示装置成功地抑制了来自每个感光装置的泄漏电流并提高了S / N比。 在图像显示装置中，像素和感光装置成对地以矩阵形式设置在基板上。 每个像素和每个光敏器件都是独立驱动的。 每个感光装置包括半导体层，其是连接到至少第一电极和第二电极的光电转换层。 第一和第二电极相对于半导体层的接触表面被设置成使得它们的中心轴彼此分离。

公开(公告)号：US08357940B2

公开(公告)日：2013-01-22

申请号：US12958605

申请日：2010-12-02

申请人： Isao Suzumura ,  Yoshiaki Toyota ,  Mieko Matsumura

发明人： Isao Suzumura ,  Yoshiaki Toyota ,  Mieko Matsumura

IPC分类号： H01L29/04

CPC分类号： H01L29/66765 ,  H01L27/1248 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/78678 ,  H01L29/78696

摘要： A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the opening. The interlayer insulating film contains nitrides in an amount larger than that in the gate insulating film, and the semiconductor film includes a microcrystalline semiconductor film or a polycrystalline semiconductor film formed on semiconductor crystalline nuclei which are formed on the gate insulating film and the interlayer insulating film and contain at least Ge.

摘要翻译： 底栅型薄膜晶体管包括栅极绝缘膜，形成在栅极绝缘膜上的层间绝缘膜，具有形成在栅电极的形成区域中的开口，以及形成在层间绝缘膜上的半导体膜 以覆盖开幕。 层间绝缘膜含有比栅极绝缘膜大的氮化物，并且半导体膜包括在栅绝缘膜和层间绝缘膜上形成的形成在半导体晶核上的微晶半导体膜或多晶半导体膜 并至少含有Ge。

公开(公告)号：US20090032824A1

公开(公告)日：2009-02-05

申请号：US12219435

申请日：2008-07-22

申请人： Isao Suzumura ,  Yoshiaki Toyota

发明人： Isao Suzumura ,  Yoshiaki Toyota

IPC分类号： H01L33/00

CPC分类号： H01L27/14643 ,  G09G3/20 ,  H01L27/1214 ,  H01L27/14692

摘要： An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.

摘要翻译： 具有多个感光装置的图像显示装置成功地抑制了来自每个感光装置的泄漏电流并提高了S / N比。 在图像显示装置中，像素和感光装置成对地以矩阵形式设置在基板上。 每个像素和每个光敏器件都是独立驱动的。 每个感光装置包括半导体层，其是连接到至少第一电极和第二电极的光电转换层。 第一和第二电极相对于半导体层的接触表面被设置成使得它们的中心轴彼此分离。

公开(公告)号：US08482003B2

公开(公告)日：2013-07-09

申请号：US11874955

申请日：2007-10-19

申请人： Mieko Matsumura ,  Yoshiaki Toyota ,  Takeshi Sato ,  Mutsuko Hatano

发明人： Mieko Matsumura ,  Yoshiaki Toyota ,  Takeshi Sato ,  Mutsuko Hatano

IPC分类号： H01L31/00

CPC分类号： H01L29/4908 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/41733 ,  H01L51/56

摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.

摘要翻译： 提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。 栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。 存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。 器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

公开(公告)号：US08258024B2

公开(公告)日：2012-09-04

申请号：US12606284

申请日：2009-10-27

申请人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

发明人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78696

摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.

摘要翻译： 提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。 该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成 的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。 在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

公开(公告)号：US07550772B2

公开(公告)日：2009-06-23

申请号：US11741272

申请日：2007-04-27

申请人： Yoshiaki Toyota ,  Takeshi Sato ,  Mieko Matsumura

发明人： Yoshiaki Toyota ,  Takeshi Sato ,  Mieko Matsumura

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/326 ,  H01L27/3276 ,  H01L29/4908 ,  H01L2227/323

摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.

摘要翻译： 提供了一种降低成本的图像显示装置。 多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。 多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。 一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。

公开(公告)号：US20080169469A1

公开(公告)日：2008-07-17

申请号：US12003462

申请日：2007-12-26

申请人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Yoshiaki Toyota

发明人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Yoshiaki Toyota

IPC分类号： H01L29/04

CPC分类号： H01L27/127 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

摘要翻译： 提供了一种用于提高像素的开口率的显示装置。 在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极， 透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分 像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

公开(公告)号：US20080119018A1

公开(公告)日：2008-05-22

申请号：US11979515

申请日：2007-11-05

申请人： Yoshiaki Toyota ,  Takeshi Sato ,  Hajime Akimoto

发明人： Yoshiaki Toyota ,  Takeshi Sato ,  Hajime Akimoto

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/4908

摘要： The present invention provides an image display unit and a method for manufacturing the same, in which the number of photolithographic processes can be reduced in the manufacture of an active substrate, and the manufacturing cost can be decreased. In a bottom gate type TFT substrate, a transparent conductive film 16 in the same layer as a pixel electrode 3 is used as a bottom layer, said pixel electrode 3 having said gate electrode 4 on main surface of an insulating substrate 1, and a laminated electrode film with a metal film 26 superimposed on a top layer thereof, and said pixel electrode 3 is used as the transparent conductive film 16.

摘要翻译： 本发明提供一种图像显示单元及其制造方法，其中在有源基板的制造中可以减少光刻工艺的数量，并且可以降低制造成本。 在底栅型TFT基板中，与像素电极3同层的透明导电膜16用作底层，所述像素电极3在绝缘基板1的主表面上具有所述栅电极4，层叠 电极膜，其上叠置有金属膜26，并且所述像素电极3用作透明导电膜16。

公开(公告)号：US07133086B2

公开(公告)日：2006-11-07

申请号：US10046979

申请日：2002-01-17

申请人： Yoshiaki Toyota ,  Toshihiko Itoga ,  Hajime Akimoto

发明人： Yoshiaki Toyota ,  Toshihiko Itoga ,  Hajime Akimoto

IPC分类号： G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/136213

摘要： An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer as that of the gate-lines; an interlayer insulation film formed above the semiconductor layer; and a source electrode and a drain electrode existing in the same layer as that of the signal-lines. Each capacitor has: a storage electrode of the same layer as that of the gate-lines; an insulation film formed on the storage electrode and being in contact therewith; and an electrode formed on the insulation film and being in contact therewith and existing in the same layer as that of the signal-lines.

摘要翻译： 图像显示器具有矩阵形状的栅极线和信号线，并且具有薄膜晶体管，每个薄膜晶体管具有：具有源极区，漏极区和夹在它们之间的沟道区的岛状半导体层; 在所述半导体层和与所述栅极线相同的层的栅电极之间形成的第一绝缘膜; 形成在所述半导体层上方的层间绝缘膜; 以及存在于与信号线相同层的源电极和漏电极。 每个电容器具有：与栅极线相同层的存储电极; 形成在所述存储电极上并与其接触的绝缘膜; 以及形成在绝缘膜上并与其接触并存在于与信号线相同的层中的电极。

公开(公告)号：US07924355B2

公开(公告)日：2011-04-12

申请号：US12153508

申请日：2008-05-20

申请人： Mieko Matsumura ,  Toshio Miyazawa ,  Takeshi Sato ,  Yoshiaki Toyota

发明人： Mieko Matsumura ,  Toshio Miyazawa ,  Takeshi Sato ,  Yoshiaki Toyota

IPC分类号： G02F1/1343 ,  G02F1/1335 ,  G02F1/13 ,  H01L33/08

CPC分类号： G02F1/134363 ,  G02F1/13439 ,  G02F1/136213

摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.

摘要翻译： 三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。 在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。