摘要:
A secondary battery that can avoid reduction in battery capacity over the lapse of charge-discharge cycles and can exhibit high performance is provided. The secondary battery includes a first electrode layer, a second electrode layer, and an electrolyte layer provided between the first and second electrode layers, the electrolyte layer including electrolyte particles, wherein at least one of the first and second electrode layers includes a base member having a major surface on which a plurality of concave portions are formed and an electrode material filled in at least the concave portions, the major surface facing to the electrolyte layer.
摘要:
A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.
摘要:
A first gas flow path is formed in a first substrate. The first substrate is processed in an ejection device to form a first collector layer, a first gas diffusion layer, a first reactive layer, and an electrolyte membrane. Similarly, the first substrate is processed to form a second reactive layer, a gas diffusion layer, and a second collector layer. A second substrate which has been processed to form a second gas flow path is then disposed on the first substrate to complete production of a fuel cell having a gas flow path formed therein the opening width of which is smaller than the particle diameter of the material constituting the gas diffusion layer.
摘要:
A semiconductor device includes a transistor that is used for a charge pump circuit, being configured with a fully depleted silicon-on-insulator transistor.
摘要:
A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer is constituted of a monocrystalline material of multiple oxide as a main component thereof. Further, it is preferred that the monocrystalline material of multiple oxide has a layer structure in a crystal structure thereof.
摘要:
A battery device includes a photoelectric conversion device and a secondary battery. The photoelectric conversion device includes a first positive electrode, a first negative electrode, and a photoelectric conversion layer provided between the first positive electrode and the first negative electrode, the photoelectric conversion layer including an inorganic semiconductor and a pigment. The secondary battery includes a second positive electrode, a second negative electrode, and an electrolyte layer provided between the second positive electrode and the second negative electrode. Here, one of a first electrode pair and a second electrode pair is adhered directly, the first electrode pair including the first and the second positive electrodes, and the second electrode pair including the first and the second negative electrodes.
摘要:
A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.
摘要:
A semiconductor device includes a transistor that is used for a charge pump circuit, being configured with a fully depleted silicon-on-insulator transistor.
摘要:
Provided is a scanning near-field optical microscope capable of obtaining, in a highly sensitive manner, optical information having a spatial frequency higher than a spatial frequency corresponding to a wavelength of irradiation light. A scanning near-field optical microscope 100 according to the present invention includes: a light irradiating part 102 for emitting illumination light toward a sample 107; a light receiving part 112 for receiving light; a microstructure for generating or selectively transmitting near-field light, the microstructure being disposed on at least one of an emission side of the light irradiating part 102 and an incident side of the light receiving part 112; and an ultrahigh-wavenumber transmitting medium 108 for transmitting near-field light, the ultrahigh-wavenumber transmitting medium exhibiting anisotropy in permittivity or permeability.
摘要:
An ultrahigh-wavenumber transmitting element has at least two anisotropic media having slopes of isofrequency curves complementary with each other. The at least two anisotropic media are layered so as to transmit ultrahigh wavenumber.